MANUFACTURING METHOD AND MANUFACTURING EQUIPMENT OF DISPLAY DEVICE

    公开(公告)号:US20240414999A1

    公开(公告)日:2024-12-12

    申请号:US18677944

    申请日:2024-05-30

    Abstract: According to one embodiment, a manufacturing method includes preparing a substrate with a lower electrode, a rib and a partition, and forming an organic layer and an upper electrode. A first evaporation source used to form a first thin film of the organic layer includes a first nozzle emitting a material toward the substrate relatively moving. A second evaporation source used to form the upper electrode includes a second nozzle emitting a material toward the substrate relatively moving. An axis of at least one of the nozzles inclines to a direction orthogonal to a moving direction of the substrate with respect to a normal direction.

    MANUFACTURING DEVICE OF DISPLAY DEVICE AND MANUFACTURING METHOD OF DISPLAY DEVICE

    公开(公告)号:US20240292728A1

    公开(公告)日:2024-08-29

    申请号:US18424968

    申请日:2024-01-29

    CPC classification number: H10K71/164

    Abstract: According to one embodiment, a manufacturing device includes a first evaporation chamber including first and second evaporation sources located between a first conveyance path and a second conveyance path for conveying a processing substrate. The first evaporation source is configured to emit a material to the first conveyance path. The second evaporation source is configured to emit a material to the second conveyance path. The manufacturing device further includes a first rotation chamber including a rotation mechanism which rotates while holding the processing substrate carried out of the first conveyance path of the first evaporation chamber, and configured to carry out the processing substrate to the second conveyance path of the first evaporation chamber.

    MANUFACTURING METHOD OF DISPLAY DEVICE AND EVAPORATION DEVICE

    公开(公告)号:US20230345806A1

    公开(公告)日:2023-10-26

    申请号:US18299085

    申请日:2023-04-12

    CPC classification number: H10K71/60 H10K71/10 C23C14/50

    Abstract: According to one embodiment, a processing substrate is prepared. An organic layer is formed. An etching stopper layer is formed. The forming the etching stopper layer includes, in a first mode, inclining an evaporation source, and depositing a material emitted from the evaporation source while relative positions of the evaporation source and the processing substrate are changed, and in a second mode, inclining the evaporation source in a manner different from the first mode, and depositing the material emitted from the evaporation source while the relative positions of the evaporation source and the processing substrate are changed in an opposite manner of the first mode.

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