Photo sensor device
    11.
    发明授权

    公开(公告)号:US11973161B2

    公开(公告)日:2024-04-30

    申请号:US18091388

    申请日:2022-12-30

    CPC classification number: H01L31/125 G06F1/1605 H01L31/1016

    Abstract: A photo sensor circuit includes: a photo transistor; a first switching transistor; a second switching transistor; and a capacitance element. The photo transistor includes: a gate connected to a first wiring; a source connected to a second wiring; and a drain. The first switching transistor includes: a gate connected to a third wiring; a source connected to a fourth wiring; and a drain connected to the drain of the photo transistor. The capacitance element includes: a first terminal connected to the drain of the photo transistor; and a second terminal connected to the source of the first switching transistor. The second switching transistor includes: a gate connected to a gate line; a source connected to a signal line; and a drain connected to the first terminal of the capacitance element. The photo transistor, first switching transistor, and second transistor each include an oxide semiconductor layer as a channel layer.

    Light sensor circuit, light sensor device, and display device

    公开(公告)号:US11575062B2

    公开(公告)日:2023-02-07

    申请号:US17527192

    申请日:2021-11-16

    Abstract: A photo sensor circuit includes: a photo transistor; a first switching transistor; a second switching transistor; and a capacitance element. The photo transistor includes: a gate connected to a first wiring; a source connected to a second wiring; and a drain. The first switching transistor includes: a gate connected to a third wiring; a source connected to a fourth wiring; and a drain connected to the drain of the photo transistor. The capacitance element includes: a first terminal connected to the drain of the photo transistor; and a second terminal connected to the source of the first switching transistor. The second switching transistor includes: a gate connected to a gate line; a source connected to a signal line; and a drain connected to the first terminal of the capacitance element. The photo transistor, first switching transistor, and second transistor each include an oxide semiconductor layer as a channel layer.

    Display device
    14.
    发明授权

    公开(公告)号:US10038016B2

    公开(公告)日:2018-07-31

    申请号:US15631321

    申请日:2017-06-23

    CPC classification number: H01L27/1255 H01L27/124

    Abstract: According to one embodiment, a display device includes a pixel, a scanning line, a signal line, a pixel electrode, a first switching element, and a capacitance line producing capacitance together with the pixel electrode. The first switching element includes a first semiconductor layer connected to the signal line and the pixel electrode, and a first gate electrode opposed to the first semiconductor layer and connected to the scanning line. The capacitance line includes a first portion opposed to the scanning line and extending in an extension direction of the scanning line, a second portion connected to the first portion and opposed to the pixel electrode.

    DISPLAY DEVICE
    15.
    发明申请
    DISPLAY DEVICE 有权
    显示设备

    公开(公告)号:US20140210777A1

    公开(公告)日:2014-07-31

    申请号:US14152143

    申请日:2014-01-10

    CPC classification number: G06F3/0412 G06F3/0416 G06F3/044

    Abstract: According to one embodiment, a display device includes a display pixel allocated at a matrix state in a display area, an image-reading device which detects strength of capacitive coupling by a dielectric material coming close to or making contact with the display area, and a control portion which controls each transistor of the image-reading device. The image-reading device includes a detection electrode which forms capacitance between the detection electrode and the dielectric material, a pre-charge gate line, a coupling pulse line, a readout gate line, a pre-charge line and a readout line. These lines supply a signal which drives the image-reading device. The image-reading device further includes a pre-charge transistor, an amplification transistor, a readout transistor, a compensation transistor, and a power-source switching transistor.

    Abstract translation: 根据一个实施例,显示装置包括在显示区域中以矩阵状态分配的显示像素,图像读取装置,其通过接近或与显示区域接触的电介质材料来检测电容耦合的强度,以及 控制部分,其控制图像读取装置的每个晶体管。 图像读取装置包括在检测电极和电介质材料之间形成电容的检测电极,预充电栅极线,耦合脉冲线,读出栅极线,预充电线和读出线。 这些线路提供驱动图像读取装置的信号。 图像读取装置还包括预充电晶体管,放大晶体管,读出晶体管,补偿晶体管和电源开关晶体管。

    Detection device and display device

    公开(公告)号:US12272719B2

    公开(公告)日:2025-04-08

    申请号:US18749055

    申请日:2024-06-20

    Abstract: According to an aspect, a detection device includes: an insulating substrate; a plurality of photoelectric conversion elements that are arranged in a detection area of the insulating substrate, and each of which is configured to receive light and output a signal corresponding to the received light; a first switching element that is provided for each photoelectric conversion element and includes a first semiconductor, a source electrode, and a drain electrode; and an inorganic insulating layer provided between the photoelectric conversion element and the first switching element in a normal direction of the insulating substrate.

    Display device
    18.
    发明授权

    公开(公告)号:US11340503B2

    公开(公告)日:2022-05-24

    申请号:US15874028

    申请日:2018-01-18

    Abstract: According to one embodiment, a display device including a first substrate including a first electrode, a second electrode located above the first electrode and having potential different from the first electrode, and a third electrode located above the second electrode and electrically connected to the first electrode, a second substrate facing the first substrate, and a liquid crystal layer held between the first substrate and the second substrate, wherein at least one of the second electrode and the third electrode includes a first side, and a second side which faces the first side and is not parallel to the first side.

    Light sensor circuit, light sensor device, and display device

    公开(公告)号:US11189745B2

    公开(公告)日:2021-11-30

    申请号:US17024725

    申请日:2020-09-18

    Abstract: The problem of the present disclosure is to provide a photo sensor circuit that uses oxide semiconductor transistors and the operation of which is stable. The photo sensor circuit includes: a photo transistor; a first switching transistor; a second switching transistor; and a capacitance element. The photo transistor includes: a gate connected to a first wiring; a source connected to a second wiring; and a drain. The first switching transistor includes: a gate connected to a third wiring; a source connected to a fourth wiring; and a drain connected to the drain of the photo transistor. The capacitance element includes: a first terminal connected to the drain of the photo transistor; and a second terminal connected to the source of the first switching transistor. The second switching transistor includes: a gate connected to a gate line; a source connected to a signal line; and a drain connected to the first terminal of the capacitance element. Each of the photo transistor, the first switching transistor, and the second transistor includes an oxide semiconductor layer as a channel layer.

    Display device
    20.
    发明授权

    公开(公告)号:US10522573B2

    公开(公告)日:2019-12-31

    申请号:US16371225

    申请日:2019-04-01

    Abstract: According to one embodiment, a display device includes a pixel, a scanning line, a signal line, a pixel electrode, a first switching element, and a capacitance line producing capacitance together with the pixel electrode. The first switching element includes a first semiconductor layer connected to the signal line and the pixel electrode, and a first gate electrode opposed to the first semiconductor layer and connected to the scanning line. The capacitance line includes a first portion opposed to the scanning line and extending in an extension direction of the scanning line, a second portion connected to the first portion and opposed to the pixel electrode.

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