公开(公告)号：US20170162715A1

公开(公告)日：2017-06-08

申请号：US15371897

申请日：2016-12-07

Applicant: Japan Display Inc.

Inventor： Takashi OKADA ,  Masayoshi FUCHI ,  Hajime WATAKABE ,  Akihiro HANADA

IPC: H01L29/786 ,  H01L27/12 ,  H01L21/477 ,  H01L29/24 ,  H01L29/66 ,  H01L21/02

CPC classification number: H01L29/78696 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/477 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/7869

Abstract: According to one embodiment, a method of manufacturing a thin film transistor, includes forming an island-like first insulating layer containing oxygen above an insulating substrate, forming an oxide semiconductor layer above the insulating substrate and the first insulating layer and in contact with the first insulating layer, and performing heat treatment to supply oxygen from the first insulating layer to an overlapping area of the oxide semiconductor layer, which is overlaid on the first insulating layer.