公开(公告)号：US20060113280A1

公开(公告)日：2006-06-01

申请号：US11333678

申请日：2006-01-17

申请人： J. Rolfson

发明人： J. Rolfson

IPC分类号： C23F1/00

CPC分类号： G03F1/40 ,  G03F1/86

摘要： A method to provide a ground point for second, or subsequent, e-beam mask-writing steps by selectively removing the photoresist edge bead of a photomask substrate to expose the underlying chrome layer. The selective removal leaves at least one tab of photoresist edge bead over the chrome layer. After the first e-beam mask writing step and subsequent etch, the tab can be removed to expose a portion of the chromium layer that can act as a new ground point for a second e-beam etch. Also, a nozzle for use in selectively removing the edge bead to leave a tab of photoresist edge bead.

公开(公告)号：US20060037628A1

公开(公告)日：2006-02-23

申请号：US11038451

申请日：2005-01-19

申请人： J. Rolfson

发明人： J. Rolfson

IPC分类号： B08B3/00

CPC分类号： H01L21/02052 ,  B01D19/0036 ,  B01D19/0068 ,  B08B3/04 ,  B08B3/14 ,  H01L21/67057 ,  H01L21/67086 ,  Y10S134/902 ,  Y10S438/906

摘要： A device for wet processing of a semiconductor-containing substrate addresses contamination in the wet process by removing undesired sources of gas contamination. The method involves pumping a processing liquid through a degasifier, exposing the semiconductor wafer, in a vessel, to the degasified processing liquid; and optionally recirculating the processing liquid through the degasifier and back into the vessel.

摘要翻译： 用于湿处理含半导体的衬底的装置通过去除不期望的气体污染源来解决湿法中的污染。 该方法包括通过脱气器泵送处理液体，将容器中的半导体晶片暴露于脱气处理液体; 并且可选地将处理液体再循环通过脱气器并返回到容器中。

公开(公告)号：US20050077266A1

公开(公告)日：2005-04-14

申请号：US10686342

申请日：2003-10-14

申请人： Randal Chance ,  J. Rolfson ,  Azeddine Zerrade

发明人： Randal Chance ,  J. Rolfson ,  Azeddine Zerrade

IPC分类号： C03C15/00 ,  G03F1/00 ,  C23F1/00 ,  B44C1/22 ,  C03C25/68

CPC分类号： G03F1/32 ,  C03C15/00 ,  G03F1/26 ,  G03F1/72

摘要： The invention includes methods of converting reticles from configurations suitable for utilization with later generation (shorter wavelength) stepper radiations to configurations suitable for utilization with earlier generation (longer wavelength) stepper radiations. The invention can be utilized for converting a reticle from a configuration suitable for 193 nanometer wavelength radiation to a configuration suitable for 248 nanometer wavelength radiation. In such aspect, a quartz-containing material of a substrate can be protected with a patterned layer consisting essentially of molybdenum and silicon while the quartz-containing material is subjected to a dry etch. The configuration suitable for 248 nanometer wavelength radiation can be constructed so that a phase of 248 nanometer wavelength radiation is shifted by about 180° upon passing through combined thicknesses of the patterned layer and the quartz-containing material, relative to 248 nanometer wavelength radiation which passes only through the quartz-containing material.

摘要翻译： 本发明包括从适合于利用后代（较短波长）步进辐射的配置转换掩模版到适于利用早期生成（更长波长）步进辐射的配置的方法。 本发明可用于将掩模版从适于193纳米波长辐射的配置转换成适合于248纳米波长辐射的配置。 在这种方面，可以用基本上由钼和硅组成的图案层来保护衬底的含石英材料，同时对含石英的材料进行干蚀刻。 可以构造适合于248纳米波长辐射的配置，使得248纳米波长辐射的相位相对于通过图案化层和含石英的材料的组合厚度相对于相对于通过的248纳米波长辐射而偏移大约180度 仅通过含石英材料。