摘要:
A protrusion (13a) and a protrusion (13b) are formed a predetermined distance apart in the direction of a shaft in the outer circumferential surface of the roller main body (11). The cross sections of the protrusion (13a) and the protrusion (13b) are shaped such that a center portion of the roller main body (11) in the direction of the shaft is a boundary (14), and that on the left side of the boundary (14), a vertex (131a) is displaced to the left side from the perpendicular bisector (133a) of an opposite side (132a) whereas on the right side of the boundary (14), a vertex (131b) is displaced to the right side from the perpendicular bisector (133b) of an opposite side (132b). In this way, in a metallic movement roller that moves a strung endless belt, the winding movement and the like of the belt can be prevented, and the belt can be intentionally moved in a specific direction.
摘要:
A partition member is provided with an elastic body for absorbing hydraulic pressure fluctuation of the primary liquid chamber and a frame member for supporting an outer circumferential portion of the elastic body while aiming to prevent the rotation of the elastic body. A relief aperture communicating between the primary liquid chamber and the secondary liquid chamber is located on the outer circumferential side in the elastic body supporting region of the frame member. A relief valve for opening and closing the relief aperture is integrally formed on the outer circumferential side of the elastic body. The relief valve is formed of a pair of right and left relief valves. A width across flat sections are formed on a thick-walled outer circumferential section of the elastic body which is located between the right and left relief valves, such as to serve as a detent means.
摘要:
A technique for a reverse conducting semiconductor device including an IGBT element domain and a diode element domain that utilize body regions having a mutual impurity concentration, that makes it possible to adjust an injection efficiency of holes or electrons to the diode element domain, is provided. When a return current flows in the reverse conducting semiconductor device that uses an NPNP-type IGBT, a second voltage that is higher than a voltage of an emitter electrode is applied to second trench gate electrodes of the diode element domain. N-type inversion layers are formed in the periphery of the second trench gate electrodes, and the electrons flow therethrough via a first body contact region and a drift region which are of the same n-type. The injection efficiency of the electrons to the return current is increased, and the injection efficiency of the holes is decreased. Due to this, an increase in a reverse recovery current can be prevented, and a switching loss caused in the diode element domain can be decreased.
摘要:
The present invention provides a method for producing a useful substance by supplying, to a fixed-bed reactor packed with an immobilized enzyme, a liquid mixture containing two liquid phases, in which the two liquid phases are allowed to flow in an identical, parallel direction, which method employs a fixed-bed reactor equipped with an insertion unit or tubes, so as to form a plurality of lumens in the fixed-bed reactor, each lumen having a cross section of a circular shape with a diameter of 100 mm or less or having a polygonal shape with a diagonal line of 100 mm or less, wherein the lumens are packed with an immobilized enzyme and the liquid mixture is supplied therethrough. In a reaction performed by passing a reaction mixture exhibiting two liquid phases through a fixed-bed reactor equipped with an immobilized enzyme, overall flow of the reaction liquid is made uniform, to thereby facilitate production of a useful substance in an efficient manner.
摘要:
A system and method for automatically calculating an optimum layout of a wireless cell station in an environment using a wireless communication system, thereby achieving a timesaving and resources-saving cell design procedure. The system calculates an optimum layout of the wireless cell station based on information of terminal locations.
摘要:
A semiconductor device is provided having a high voltage driver IC reducing malfunction or device destruction. A high voltage IC chip includes a trench structure that surrounds each of two semiconductor regions at different electrical potentials. Specifically, a first semiconductor region forms a ground-potential-based circuit, and a high voltage junction terminating structure around a second semiconductor region forms a floating-potential-based circuit. A trench structure is formed after digging a trench by implanting a high concentration p+ region on a trench wall, or alternatively, by filling the trench with a p+ doped polysilicon or with a dielectric.
摘要:
A polypropylene composition comprising 0.001 to 10 parts by weight of a polyethylene having an intrinsic viscosity [&eegr;E] of 0.01 to less than 15 dl/g s measured in tetralin at 135° C. and 100 parts by weight of a polyolefin comprising at least polypropylene, wherein the polyethylene is finely dispersed as particles with a number average particle diameter of, e.g., 1 to 5000 nm in the polyolefin comprising at least polypropylene. By virtue of the above constitution, the polypropylene composition has excellent transparency and rigidity, is free from the creation of a sweeper roll flow mark in the preparation of a film and substantially free from a neck-in phenomenon of a film, and has high productivity.
摘要:
A polydisperse propylene polymer characterized by being produced by polymerizing a propylene monomer or a mixed monomer of propylene and other olefin(s) by a multistage polymerization wherein the polymerization conditions are stepwise changed in the presence of a supported metallocene catalyst having a transition metal compound and an aluminoxane or a reaction product thereof supported on a finely particulate support, and an organoaluminum compound as a scavenger, and by having a ratio of a weight-average molecular weight to a number-average molecular weight (Mw/Mn) of 4.0 or higher, a melting point (Tm) of 165° C. or lower and a difference between the melting point (Tm) and a heat distortion temperature (HDT) of 30° C. or less.
摘要:
Disclosed are &mgr;-oxo-bis-metallocene complex compounds, catalysts for the polymerization of olefins comprising a &mgr;-oxo-bis-metallocene complex compound and at lease one cocatalyst selected from the group consisting of an aluminoxane, an ionic compound, and a Lewis acid, and a process for the polymerization of olefins. An example of the &mgr;-oxo-bis-metallocene complex compound is represented by the following formula (1): wherein, for example, M is zirconium, n is 1, Y is silicon, X is chloro, and R1-R10 maybe hydrogen or alkyl.
摘要:
The present invention provides propylene/ethylene random copolymers characterized in that: an ethylene content (Ew) is 0.1-10 wt %, a relationship between an isolated ethylene content (E1) and the ethylene content (Ew) is represented by the following equation E1>0.85−0.01 Ew 2,1- and 1,3-propylene units present in a polymer chain are 0-1 mol %, a weight average molecular weight (Mw) is in the range of 40,000-1,000,000, and a ratio (Mw/Mn) of the weight average molecular weight (Mw) to a number average molecular weight(Mn) is in the range of 1.5-3.8. The copolymers are suitable for a base resin for a molding material for the production of a wide variety of molded articles which are high in randomness and excellent in stiffness, heat resistance and transparency.