公开(公告)号：US20240098981A1

公开(公告)日：2024-03-21

申请号：US18458050

申请日：2023-08-29

Applicant: Kioxia Corporation

Inventor： Daichi NISHIKAWA ,  Daisuke IKENO ,  Atsuko SAKATA

IPC: H10B12/00 ,  H01L29/786

CPC classification number: H10B12/395 ,  H01L29/78642 ,  H01L29/7869 ,  H10B12/488

Abstract: According to one embodiment, a semiconductor device includes a pillar of an oxide semiconductor material and a gate insulating layer that surrounds a side surface of the pillar. The gate insulating layer includes a lower portion, an upper portion, and an intermediate portion. A gate electrode surrounds the intermediate portion of the gate insulating layer. A lower electrode is provided that includes a first oxide conductor portion that is connected to a lower surface of the pillar. An upper electrode is provided connected to an upper surface of the pillar. The gate electrode includes a metal portion containing a metallic element and a first nitrogen-containing portion between the metal portion and the gate insulating layer. The first oxide conductor portion includes a second nitrogen-containing at an interface between the first oxide conductor portion and the gate insulating layer.

公开(公告)号：US20230046783A1

公开(公告)日：2023-02-16

申请号：US17550062

申请日：2021-12-14

Applicant: Kioxia Corporation

Inventor： Hiroki KITAYAMA ,  Mitsuo IKEDA ,  Daisuke IKENO ,  Akihiro KAJITA

IPC: H01L23/535 ,  H01L23/532 ,  H01L27/11556 ,  H01L27/11582

Abstract: A semiconductor memory device includes a first insulating layer, a first conductive layer, a first pillar, a second pillar, and a second insulating layer. The first conductive layer contains tungsten. The first conductive layer includes a first sub conductive layer and a second sub conductive layer. The first pillar and the second pillar pass through the first insulating layer and the first conductive layer. The second insulating layer divides the first insulating layer and the first conductive layer. The first sub conductive layer is in contact with the second sub conductive layer and is provided between the second sub conductive layer and the first insulating layer. A fluorine concentration in the first sub conductive layer is lower than that in the second sub conductive layer.