公开(公告)号：US20220195594A1

公开(公告)日：2022-06-23

申请号：US17690243

申请日：2022-03-09

Applicant: KIOXIA CORPORATION

Inventor： Masayuki KITAMURA ,  Atsuko SAKATA ,  Satoshi WAKATSUKI

IPC: C23C16/44 ,  H01L21/285 ,  C23C16/458 ,  H01L21/205 ,  C30B29/06 ,  C23C16/455 ,  H01L21/768

Abstract: A semiconductor manufacturing apparatus includes a reaction chamber configured to perform a process on a semiconductor substrate using a gas mixture comprising a first gas, and a first path configured to exhaust resultant gas that comprises the first gas from the reaction chamber. The semiconductor manufacturing apparatus further includes a first trap provided in the first path and configured to extract at least a portion of the first gas from the resultant gas, and a second path in which the trap is not provided and configured to exhaust the resultant gas from the reaction chamber.

公开(公告)号：US20230030121A1

公开(公告)日：2023-02-02

申请号：US17964375

申请日：2022-10-12

Applicant: Kioxia Corporation

Inventor： Akifumi GAWASE ,  Atsuko SAKATA

IPC: H01L29/786 ,  H01L27/108 ,  H01L29/66 ,  H01L21/02 ,  H01L29/24

Abstract: Provided is a semiconductor device of the embodiment including: an oxide semiconductor layer; a gate electrode; a first electrode electrically connected to one portion of the oxide semiconductor layer, the first electrode including a first region, second region, a third region, and a fourth region, the first region disposed between the first portion and the second region, the first region disposed between the third region and the fourth region, the first region containing at least one element of In, Zn, Sn or Cd, and oxygen, the second region containing at least one metal element of Ti, Ta, W, or Ru, the third region and the fourth region containing the at least one metal element and oxygen, the third region and the fourth region having an atomic concentration of oxygen higher than that of the second region; and a second electrode electrically connected to another portion of the oxide semiconductor layer.

公开(公告)号：US20240098981A1

公开(公告)日：2024-03-21

申请号：US18458050

申请日：2023-08-29

Applicant: Kioxia Corporation

Inventor： Daichi NISHIKAWA ,  Daisuke IKENO ,  Atsuko SAKATA

IPC: H10B12/00 ,  H01L29/786

CPC classification number: H10B12/395 ,  H01L29/78642 ,  H01L29/7869 ,  H10B12/488

Abstract: According to one embodiment, a semiconductor device includes a pillar of an oxide semiconductor material and a gate insulating layer that surrounds a side surface of the pillar. The gate insulating layer includes a lower portion, an upper portion, and an intermediate portion. A gate electrode surrounds the intermediate portion of the gate insulating layer. A lower electrode is provided that includes a first oxide conductor portion that is connected to a lower surface of the pillar. An upper electrode is provided connected to an upper surface of the pillar. The gate electrode includes a metal portion containing a metallic element and a first nitrogen-containing portion between the metal portion and the gate insulating layer. The first oxide conductor portion includes a second nitrogen-containing at an interface between the first oxide conductor portion and the gate insulating layer.

公开(公告)号：US20230200050A1

公开(公告)日：2023-06-22

申请号：US17841129

申请日：2022-06-15

Applicant: Kioxia Corporation

Inventor： Akifumi GAWASE ,  Ha HOANG ,  Atsuko SAKATA ,  Yuta KAMIYA ,  Kazuhiro MATSUO ,  Keiichi SAWA ,  Kota TAKAHASHI ,  Kenichiro TORATANI ,  Yimin LIU

IPC: H01L27/108 ,  H01L29/786 ,  H01L29/66

CPC classification number: H01L27/10805 ,  H01L29/78642 ,  H01L29/7869 ,  H01L29/66969 ,  H01L27/10873

Abstract: A semiconductor device of embodiments includes: a first electrode; a second electrode; an oxide semiconductor layer between the first electrode and the second electrode; a gate electrode surrounding the oxide semiconductor layer; a gate insulating layer between the gate electrode and the oxide semiconductor layer; a first insulating layer provided between the first electrode and the gate electrode; and a second insulating layer provided between the second electrode and the gate electrode. In a cross section parallel to a first direction from the first electrode to the second electrode, a first portion of the oxide semiconductor layer is provided between the gate insulating layer and the first electrode. In the cross section, a second portion of the oxide semiconductor layer is provided between the gate insulating layer and the second electrode.

公开(公告)号：US20220319842A1

公开(公告)日：2022-10-06

申请号：US17844333

申请日：2022-06-20

Applicant: KIOXIA CORPORATION

Inventor： Yuya MATSUBARA ,  Masayuki KITAMURA ,  Atsuko SAKATA

IPC: H01L21/02 ,  H01L21/285 ,  C23C16/32 ,  C23C16/50 ,  C23C16/30 ,  C23C16/52

Abstract: A substrate processing apparatus includes a chamber to accommodate a substrate. The apparatus includes a stage to support the substrate in the chamber. The apparatus includes an electrode disposed above the stage and containing aluminum. The electrode generates plasma from gas supplied into the chamber to form a first film on the substrate by the plasma. The apparatus further includes a second film formed on a surface of the electrode and containing aluminum and fluorine or containing aluminum and oxygen.

公开(公告)号：US20220302320A1

公开(公告)日：2022-09-22

申请号：US17447330

申请日：2021-09-10

Applicant: Kioxia Corporation

Inventor： Akifumi GAWASE ,  Atsuko SAKATA

IPC: H01L29/786 ,  H01L27/108 ,  H01L29/24 ,  H01L21/02 ,  H01L29/66

Abstract: Provided is a semiconductor device of the embodiment including: an oxide semiconductor layer; a gate electrode; a first electrode electrically connected to one portion of the oxide semiconductor layer, the first electrode including a first region, second region, a third region, and a fourth region, the first region disposed between the first portion and the second region, the first region disposed between the third region and the fourth region, the first region containing at least one element of In, Zn, Sn or Cd, and oxygen, the second region containing at least one metal element of Ti, Ta, W, or Ru, the third region and the fourth region containing the at least one metal element and oxygen, the third region and the fourth region having an atomic concentration of oxygen higher than that of the second region; and a second electrode electrically connected to another portion of the oxide semiconductor layer.

公开(公告)号：US20210020439A1

公开(公告)日：2021-01-21

申请号：US16803194

申请日：2020-02-27

Applicant: KIOXIA CORPORATION

Inventor： Soichi YAMAZAKI ,  Kazuhito FURUMOTO ,  Kosuke HORIBE ,  Keisuke KIKUTANI ,  Atsuko SAKATA

IPC: H01L21/033 ,  H01L21/3213 ,  H01L21/311

Abstract: According to one embodiment, a method of manufacturing a semiconductor device includes forming a first film on a substrate. The method further includes forming a second film on the first film. The second film includes fluoride of a first metal element having a first boiling point of 800° C. or higher and fluoride of a second metal element having a second boiling point of 800° C. or higher. The second metal element is different from the first metal element. The method further includes etching the first film using the second film as an etching mask and etching gas that includes fluorine.