公开(公告)号：US20250089342A1

公开(公告)日：2025-03-13

申请号：US18822592

申请日：2024-09-03

Applicant: Kioxia Corporation

Inventor： Daichi NISHIKAWA ,  Daisuke IKENO ,  Junichi HAMAGUCHI ,  Yoshiki SAITO ,  Akihiro KAJITA

IPC: H01L29/49 ,  H01L21/28

Abstract: A semiconductor device of an embodiment includes: first and second regions that are provided in a substrate, the first and second regions containing impurities of a first conductivity type; a gate electrode disposed above the substrate between the first and second regions; first and second metal silicide layers disposed in the first and second regions, respectively; and first and second contacts connected to the first and second regions via the first and second metal silicide layers, respectively, in which the first and second contacts include: first and second oxidized silicide layers that are disposed at lower end portions of the first and second contacts and contain a predetermined metal different from metals included in the first and second metal silicide layers, respective; and metal layers that are in contact with the first and second oxidized silicide layers and extend in a second direction that intersects the first direction, respectively.

公开(公告)号：US20240098981A1

公开(公告)日：2024-03-21

申请号：US18458050

申请日：2023-08-29

Applicant: Kioxia Corporation

Inventor： Daichi NISHIKAWA ,  Daisuke IKENO ,  Atsuko SAKATA

IPC: H10B12/00 ,  H01L29/786

CPC classification number: H10B12/395 ,  H01L29/78642 ,  H01L29/7869 ,  H10B12/488

Abstract: According to one embodiment, a semiconductor device includes a pillar of an oxide semiconductor material and a gate insulating layer that surrounds a side surface of the pillar. The gate insulating layer includes a lower portion, an upper portion, and an intermediate portion. A gate electrode surrounds the intermediate portion of the gate insulating layer. A lower electrode is provided that includes a first oxide conductor portion that is connected to a lower surface of the pillar. An upper electrode is provided connected to an upper surface of the pillar. The gate electrode includes a metal portion containing a metallic element and a first nitrogen-containing portion between the metal portion and the gate insulating layer. The first oxide conductor portion includes a second nitrogen-containing at an interface between the first oxide conductor portion and the gate insulating layer.

公开(公告)号：US20220406710A1

公开(公告)日：2022-12-22

申请号：US17682810

申请日：2022-02-28

Applicant: Kioxia Corporation

Inventor： Tatsuya NOMURA ,  Daichi NISHIKAWA ,  Daisuke IKENO ,  Akihiro KAJITA

IPC: H01L23/522 ,  H01L23/532 ,  H01L21/3213

Abstract: A semiconductor device includes a conductive layer extending in a first direction, including a first surface, a second surface facing the first surface in a second direction intersecting the first direction, a third surface, and a fourth surface facing the third surface in a third direction intersecting the first direction and the second direction, and containing a first element which is at least one element of tungsten (W) or molybdenum (Mo); a first region disposed on a first surface side of the conductive layer, containing a second element which is at least one element of tungsten (W) or molybdenum (Mo), and a third element which is at least one element of sulfur (S), selenium (Se), or tellurium (Te), and including a first crystal; and a second region disposed on a second surface side of the conductive layer, containing the second element and the third element, and including a second crystal.