公开(公告)号：US20230301118A1

公开(公告)日：2023-09-21

申请号：US17901485

申请日：2022-09-01

Applicant: Kioxia Corporation

Inventor： Katsuyoshi KOMATSU ,  Hiroki TOKUHIRA ,  Hiroshi TAKEHIRA ,  Hiroyuki ODE ,  Jieqiong ZHANG

IPC: H01L27/24 ,  H01L45/00 ,  G11C13/00

CPC classification number: H01L27/249 ,  H01L27/2409 ,  H01L45/06 ,  H01L45/1683 ,  G11C13/0004 ,  G11C13/004 ,  G11C13/0069 ,  G11C2213/72 ,  G11C2213/71

Abstract: A semiconductor memory device includes a first wiring extending in a first direction; a second wiring extending in a second direction and spaced from the first wiring in a third direction; a stacked body disposed between the first and second wirings and including conductive layers and insulating layers alternately stacked on top of one another in the third direction; a columnar body extending through the stacked body and including: (a) an electrode disposed between the first wiring and the second wiring, (b) a memory layer disposed between the electrode and the conductive layers, and (c) a selection layer disposed between the electrode and the first wiring; and a diode disposed between the electrode and the second wiring.

公开(公告)号：US20230085722A1

公开(公告)日：2023-03-23

申请号：US17687130

申请日：2022-03-04

Applicant: Kioxia Corporation

Inventor： Jieqiong ZHANG ,  Katsuyoshi KOMATSU ,  Tadaomi DAIBOU ,  Takeshi IWASAKI ,  Hiroki TOKUHIRA ,  Hiroki KAWAI ,  Hiroshi TAKEHIRA

IPC: H01L45/00

Abstract: A semiconductor storage device including a phase change memory film having a composition containing at least Ge, Sb, Te, and Se, and containing Se as a design composition ratio to Te in a composition ratio showing a phase change memory property with at least three elements Ge, Sb, and Te. The composition ratio of Se is 33.6 atom % or less.

公开(公告)号：US20220328489A1

公开(公告)日：2022-10-13

申请号：US17472902

申请日：2021-09-13

Applicant: Kioxia Corporation

Inventor： Teruhisa SONOHARA ,  Shunichi SENO ,  Hiroki TOKUHIRA ,  Fumitaka ARAI

IPC: H01L27/108 ,  H01L29/786 ,  H01L21/02 ,  H01L29/66 ,  G11C11/406 ,  G11C11/4096 ,  G11C11/4076

Abstract: A semiconductor memory device includes: a first wiring; a first semiconductor layer connected to the first wiring, the first semiconductor layer; a first electrode, the first electrode being connected to the first semiconductor layer; a second electrode disposed between the first electrode and the first wiring, the second electrode being opposed to the first semiconductor layer; a third electrode disposed between the second electrode and the first wiring, the third electrode; a second semiconductor layer disposed between the third electrode and the first semiconductor layer, the second semiconductor layer being opposed to the third electrode; and an electric charge accumulating layer electrically connected to the first wiring via the second semiconductor layer, the electric charge accumulating layer being opposed to the first semiconductor layer.

公开(公告)号：US20220302385A1

公开(公告)日：2022-09-22

申请号：US17462819

申请日：2021-08-31

Applicant: Kioxia Corporation

Inventor： Takao KOSAKA ,  Hiroki TOKUHIRA

IPC: H01L45/00 ,  H01L27/24

Abstract: A resistance change device of an embodiment includes: a first electrode; a second electrode; and a stack disposed between these electrodes, and including a first layer containing a resistance change material and a second layer in contact with the first layer. The resistance change material contains at least one of a first element such as Ge and a second element such as Sb, and at least one third element selected from Te, Se, S, and O. The second layer contains a crystal material containing at least one selected from a group consisting of a first material having a composition represented by (Ti,Zr,Hf)CoSb, (Zr,Hf)NiSn, or Fe(Nb,Zr,Hf)(Sb,Sn), a second material having a composition represented by Fe(V,Hf,W)(Al,Si), and a third material having a composition represented by Mg(Si,Ge,Sn).

公开(公告)号：US20210288252A1

公开(公告)日：2021-09-16

申请号：US17184871

申请日：2021-02-25

Applicant: Kioxia Corporation

Inventor： Toshihiko NAGASE ,  Daisuke WATANABE ,  Yoshitomo KOBAYASHI ,  Hiroki TOKUHIRA ,  Hiroki KAWAI

IPC: H01L45/00 ,  H01L27/24

Abstract: A selector includes a first electrode, a second electrode, and a selector layer provided between the first electrode and the second electrode and contains SixTeyNz. The x, y, and z of the SixTeyNz satisfy 0