公开(公告)号：US20230413516A1

公开(公告)日：2023-12-21

申请号：US18458054

申请日：2023-08-29

Applicant: Kioxia Corporation

Inventor： Teruhisa SONOHARA ,  Shunichi SENO ,  Hiroki TOKUHIRA ,  Fumitaka ARAI

IPC: H10B12/00 ,  H01L29/786 ,  G11C11/4076 ,  H01L29/66 ,  G11C11/406 ,  G11C11/4096 ,  H01L21/02

CPC classification number: H10B12/30 ,  H01L29/7869 ,  G11C11/4076 ,  H01L29/66969 ,  G11C11/40615 ,  G11C11/4096 ,  H01L21/02565 ,  H10B12/03 ,  H10B12/05

Abstract: A semiconductor memory device includes: a first wiring; a first semiconductor layer connected to the first wiring, the first semiconductor layer; a first electrode, the first electrode being connected to the first semiconductor layer; a second electrode disposed between the first electrode and the first wiring, the second electrode being opposed to the first semiconductor layer; a third electrode disposed between the second electrode and the first wiring, the third electrode; a second semiconductor layer disposed between the third electrode and the first semiconductor layer, the second semiconductor layer being opposed to the third electrode; and an electric charge accumulating layer electrically connected to the first wiring via the second semiconductor layer, the electric charge accumulating layer being opposed to the first semiconductor layer.

公开(公告)号：US20230403955A1

公开(公告)日：2023-12-14

申请号：US18330515

申请日：2023-06-07

Applicant: Kioxia Corporation

Inventor： Ryouji MASUDA ,  Hiroki TOKUHIRA

IPC: H10N70/00 ,  H10B63/10 ,  H10B63/00 ,  H10N70/20

CPC classification number: H10N70/8616 ,  H10B63/10 ,  H10B63/20 ,  H10B63/80 ,  H10N70/231 ,  H10N70/8413 ,  H10N70/8828 ,  H10N70/063

Abstract: A semiconductor memory device includes: a first wiring extending in a first direction; a second wiring extending in a second direction that intersects with the first direction; a resistance change film provided between the first wiring and the second wiring and including at least one element selected from a group consisting of germanium, antimony, and tellurium; an electrode provided between the resistance change film and the first wiring; and a first film selectively provided between the electrode and the first wiring, in which the electrode includes a surface in contact with both of the first wiring and the first film.

公开(公告)号：US20220231032A1

公开(公告)日：2022-07-21

申请号：US17716450

申请日：2022-04-08

Applicant: KIOXIA CORPORATION

Inventor： Hiroki TOKUHIRA ,  Takahisa KANEMURA ,  Shigeo KONDO ,  Michiru HOGYOKU

IPC: H01L27/1157 ,  H01L27/11582 ,  H01L21/28

Abstract: A semiconductor memory device according to an embodiment includes a first stacked body, a second stacked body, an intermediate conductive layer, an intermediate insulating layer, a semiconductor pillar, a charge storage film, and an insulating film. The semiconductor pillar includes a first part, a second part, and a third part. The charge storage film includes a first charge storage portion and a second charge storage portion. The charge storage film includes at least one first element selected from the group consisting of nitrogen, hafnium, and aluminum. The insulating film provides in at least a portion between the intermediate conductive layer and the first part. The insulating film not includes the first element, or the insulating film has a concentration of the first element lower than a concentration of the first element of the charge storage film.

公开(公告)号：US20210280635A1

公开(公告)日：2021-09-09

申请号：US17189107

申请日：2021-03-01

Applicant: Kioxia Corporation

Inventor： Hiroki TOKUHIRA ,  Tsuyoshi KONDO ,  Mutsumi OKAJIMA ,  Yoshihiro UEDA

IPC: H01L27/22 ,  H01L43/02 ,  H01L43/12

Abstract: A magnetic memory of an embodiment includes: a first magnetic member including a first and second portions and extending in a first direction; a first and second wirings disposed to be apart from the first magnetic member and extending in a second direction intersecting the first direction, the first and the second wirings being separated from each other in a third direction intersecting the first and second directions, the first magnetic member being disposed to be apart from a region between the first wiring and the second wiring in the first direction; and a second magnetic member surrounding at least parts of the first and second wirings, the second magnetic member including a third portion located to be more distant from the first magnetic member, a fourth portion located to be closer to the first magnetic member, and a fifth portion located in the region.

公开(公告)号：US20250016976A1

公开(公告)日：2025-01-09

申请号：US18887835

申请日：2024-09-17

Applicant: Kioxia Corporation

Inventor： Teruhisa SONOHARA ,  Shunichi SENO ,  Hiroki TOKUHIRA ,  Fumitaka ARAI

IPC: H10B12/00 ,  G11C11/406 ,  G11C11/4076 ,  G11C11/4096 ,  H01L21/02 ,  H01L29/66 ,  H01L29/786

Abstract: A semiconductor memory device includes: a first wiring; a first semiconductor layer connected to the first wiring, the first semiconductor layer; a first electrode, the first electrode being connected to the first semiconductor layer; a second electrode disposed between the first electrode and the first wiring, the second electrode being opposed to the first semiconductor layer; a third electrode disposed between the second electrode and the first wiring, the third electrode; a second semiconductor layer disposed between the third electrode and the first semiconductor layer, the second semiconductor layer being opposed to the third electrode; and an electric charge accumulating layer electrically connected to the first wiring via the second semiconductor layer, the electric charge accumulating layer being opposed to the first semiconductor layer.

公开(公告)号：US20210202838A1

公开(公告)日：2021-07-01

申请号：US17014587

申请日：2020-09-08

Applicant: Kioxia Corporation

Inventor： Hiroki KAWAI ,  Katsuyoshi KOMATSU ,  Tadaomi DAIBOU ,  Hiroki TOKUHIRA ,  Masatoshi YOSHIKAWA ,  Yuichi ITO

IPC: H01L45/00

Abstract: A resistance variable device of an embodiment includes a stack arranged between a first electrode and a second electrode and including a resistance variable layer and a chalcogen-containing layer. The chalcogen-containing layer contains a material having a composition represented by a general formula: C1xC2yAz, where C1 is at least one element selected from Sc, Y, Zr, and Hf, C2 is at least one element selected from C, Si, Ge, B, Al, Ga, and In, A is at least one element selected from S, Se, and Te, and x, y, and z are numbers representing atomic ratios satisfying 0

公开(公告)号：US20240008278A1

公开(公告)日：2024-01-04

申请号：US18359112

申请日：2023-07-26

Applicant: KIOXIA CORPORATION

Inventor： Hiroki TOKUHIRA ,  Takahisa KANEMURA ,  Shigeo KONDO ,  Michiru HOGYOKU

IPC: H10B43/35 ,  H01L21/28 ,  H10B43/27

CPC classification number: H10B43/35 ,  H01L29/40117 ,  H10B43/27

Abstract: A semiconductor memory device according to an embodiment includes a first stacked body, a second stacked body, an intermediate conductive layer, an intermediate insulating layer, a semiconductor pillar, a charge storage film, and an insulating film. The semiconductor pillar includes a first part, a second part, and a third part. The charge storage film includes a first charge storage portion and a second charge storage portion. The charge storage film includes at least one first element selected from the group consisting of nitrogen, hafnium, and aluminum. The insulating film provides in at least a portion between the intermediate conductive layer and the first part. The insulating film not includes the first element, or the insulating film has a concentration of the first element lower than a concentration of the first element of the charge storage film.

公开(公告)号：US20230091204A1

公开(公告)日：2023-03-23

申请号：US17681853

申请日：2022-02-28

Applicant: KIOXIA CORPORATION

Inventor： Takao KOSAKA ,  Hideto HORII ,  Hiroki TOKUHIRA ,  Kazuya MATSUZAWA ,  Hiroki KAWAI

IPC: H01L27/108 ,  H01L29/786 ,  G11C11/4091 ,  H01L29/66

Abstract: A semiconductor device includes a first conductive layer extending along a first direction, a semiconductor layer extending along a second direction crossing the first direction, penetrating the first conductive layer, and including an oxide semiconductor, a first insulating layer between the first conductive layer and the semiconductor layer, a second conductive layer provided on one side of the semiconductor layer in the second direction and electrically connected thereto, a third conductive layer provided on the other side of the semiconductor layer in the second direction and electrically connected thereto, an electric conductor extending from the third conductive layer toward the second conductive layer along the semiconductor layer, and a charge storage film between the semiconductor layer and the electric conductor.

公开(公告)号：US20230085635A1

公开(公告)日：2023-03-23

申请号：US17687944

申请日：2022-03-07

Applicant: Kioxia Corporation

Inventor： Hiroki KAWAI ,  Kasumi YASUDA ,  Hiroki TOKUHIRA ,  Kazuhiro KATONO ,  Akifumi GAWASE ,  Katsuyoshi KOMATSU ,  Tadaomi DAIBOU

IPC: H01L45/00 ,  G11C13/00

Abstract: A resistance change device of an embodiment includes a first electrode, a second electrode, and a layer disposed between the first electrode and the second electrode and containing a resistance change material. In the resistance change device of the embodiment, the resistance change material contains: a first element including Sb and Te; a second element including at least one element selected from the group consisting of Ge and In; a third element including at least one element selected from the group consisting of Si, N, B, C, Al, and Ti; and a fourth element including at least one element selected from the group consisting of Sc, Y, La, Gd, Zr, and Hf.

公开(公告)号：US20240422984A1

公开(公告)日：2024-12-19

申请号：US18816566

申请日：2024-08-27

Applicant: KIOXIA CORPORATION

Inventor： Hiroki TOKUHIRA ,  Takahisa KANEMURA ,  Shigeo KONDO ,  Michiru HOGYOKU

IPC: H10B43/35 ,  H01L21/28 ,  H10B43/27

Abstract: A semiconductor memory device according to an embodiment includes a first stacked body, a second stacked body, an intermediate conductive layer, an intermediate insulating layer, a semiconductor pillar, a charge storage film, and an insulating film. The semiconductor pillar includes a first part, a second part, and a third part. The charge storage film includes a first charge storage portion and a second charge storage portion. The charge storage film includes at least one first element selected from the group consisting of nitrogen, hafnium, and aluminum. The insulating film provides in at least a portion between the intermediate conductive layer and the first part. The insulating film not includes the first element, or the insulating film has a concentration of the first element lower than a concentration of the first element of the charge storage film.