公开(公告)号：US20220189989A1

公开(公告)日：2022-06-16

申请号：US17410895

申请日：2021-08-24

Applicant: KIOXIA CORPORATION

Inventor： Masaya TODA ,  Kota TAKAHASHI ,  Kazuhiro MATSUO ,  Yuta KAMIYA ,  Shinji MORI ,  Kenichiro TORATANI

IPC: H01L27/11582 ,  H01L27/1157 ,  H01L21/28

Abstract: A semiconductor device includes a stacked film of electrode layers and insulating layers. A charge storage layer is in a hole in the stacked film on a first insulating film. A channel layer is on the charge storage layer via a second insulating film. An adsorption promoting layer is on surfaces of a third insulating layer covering the insulating layers and the first insulating film facing the electrode layers. The third insulating film includes a first metal element and a first element, and the adsorption promoting layer includes a second element and a third element. The difference in electronegativity between the second element and the third element is larger than a difference in electronegativity between the first metal element and the first element.