公开(公告)号：US20250098248A1

公开(公告)日：2025-03-20

申请号：US18828277

申请日：2024-09-09

Applicant: Kioxia Corporation

Inventor： Masaya NAKATA ,  Kota TAKAHASHI ,  Yusuke MIKI ,  Takuma DOI ,  Kazuhiro MATSUO ,  Akifumi GAWASE ,  Kenichiro TORATANI

IPC: H01L29/26 ,  C23C16/52 ,  H01J37/32 ,  H01L21/02 ,  H01L21/3213 ,  H01L29/66

Abstract: A semiconductor device manufacturing method of embodiments includes: forming a first conductive film containing indium on a substrate; forming a first insulating film; forming a second conductive film; forming a second insulating film; forming an opening penetrating the second insulating film, the second conductive film, and the first insulating film to reach the first conductive film; forming a third insulating film in the opening so as to be in contact with bottom and side surfaces of the opening; removing the third insulating film at a bottom of the opening to expose the first conductive film at the bottom of the opening; performing a first treatment using a first gas containing silicon or a second treatment using a second gas containing oxygen; and forming a semiconductor film in the opening without exposing the substrate to an atmosphere with a pressure equal to or more than atmospheric pressure.

公开(公告)号：US20230200050A1

公开(公告)日：2023-06-22

申请号：US17841129

申请日：2022-06-15

Applicant: Kioxia Corporation

Inventor： Akifumi GAWASE ,  Ha HOANG ,  Atsuko SAKATA ,  Yuta KAMIYA ,  Kazuhiro MATSUO ,  Keiichi SAWA ,  Kota TAKAHASHI ,  Kenichiro TORATANI ,  Yimin LIU

IPC: H01L27/108 ,  H01L29/786 ,  H01L29/66

CPC classification number: H01L27/10805 ,  H01L29/78642 ,  H01L29/7869 ,  H01L29/66969 ,  H01L27/10873

Abstract: A semiconductor device of embodiments includes: a first electrode; a second electrode; an oxide semiconductor layer between the first electrode and the second electrode; a gate electrode surrounding the oxide semiconductor layer; a gate insulating layer between the gate electrode and the oxide semiconductor layer; a first insulating layer provided between the first electrode and the gate electrode; and a second insulating layer provided between the second electrode and the gate electrode. In a cross section parallel to a first direction from the first electrode to the second electrode, a first portion of the oxide semiconductor layer is provided between the gate insulating layer and the first electrode. In the cross section, a second portion of the oxide semiconductor layer is provided between the gate insulating layer and the second electrode.

公开(公告)号：US20230328957A1

公开(公告)日：2023-10-12

申请号：US17929422

申请日：2022-09-02

Applicant: Kioxia Corporation

Inventor： Masaya TODA ,  Tomoki ISHIMARU ,  Ha HOANG ,  Kota TAKAHASHI ,  Kazuhiro MATSUO ,  Takafumi OCHIAI ,  Shoji HONDA ,  Kenichiro TORATANI ,  Kiwamu SAKUMA ,  Taro SHIOKAWA ,  Mutsumi OKAJIMA

IPC: H01L27/108

CPC classification number: H01L27/10805

Abstract: A semiconductor device of embodiments includes: a first electrode; a second electrode; an oxide semiconductor layer provided between the first electrode and the second electrode; a gate electrode surrounding the oxide semiconductor layer; and a gate insulating layer provided between the gate electrode and the oxide semiconductor layer, spaced from the first electrode, and containing nitrogen (N). In addition, a first distance between the first electrode and the gate insulating layer in a first direction from the first electrode to the second electrode is smaller than a second distance between the first electrode and the gate electrode in the first direction.

公开(公告)号：US20230309301A1

公开(公告)日：2023-09-28

申请号：US17844585

申请日：2022-06-20

Applicant: Kioxia Corporation

Inventor： Yuta KAMIYA ,  Kenichiro TORATANI ,  Kazuhiro MATSUO ,  Shoji HONDA ,  Takuya HIROHASHI ,  Borong CHEN ,  Kota TAKAHASHI

IPC: H01L27/11582

CPC classification number: H01L27/11582

Abstract: In one embodiment, a method of manufacturing a semiconductor device includes forming a first film including oxygen. The method further includes forming a second film including nitrogen. The method further includes etching surfaces of the first film and the second film using a substance including a halogen. The method further includes forming a third film including nitrogen on the surfaces of the first film and the second film. The third film is formed by alternately performing first processes and second processes, wherein each of the first processes forms a portion of the third film, and each of the second processes etches a portion of the third film using a substance including a halogen.

公开(公告)号：US20220310640A1

公开(公告)日：2022-09-29

申请号：US17460967

申请日：2021-08-30

Applicant: Kioxia Corporation

Inventor： Natsuki FUKUDA ,  Ryota NARASAKI ,  Takashi KURUSU ,  Yuta KAMIYA ,  Kazuhiro MATSUO ,  Shinji MORI ,  Shoji HONDA ,  Takafumi OCHIAI ,  Hiroyuki YAMASHITA ,  Junichi KANEYAMA ,  Ha HOANG ,  Yuta SAITO ,  Kota TAKAHASHI ,  Tomoki ISHIMARU ,  Kenichiro TORATANI

IPC: H01L27/11556 ,  H01L27/11519 ,  H01L27/11565 ,  H01L27/11582

Abstract: A semiconductor storage device includes a first conductive layer that extends in a first direction; a second conductive layer that extends in the first direction and is arranged with the first conductive layer in a second direction; a first insulating layer that is provided between the first conductive layer and the second conductive layer; a semiconductor layer that extends in the second direction and faces the first conductive layer, the second conductive layer, and the first insulating layer in a third direction; a first charge storage layer that is provided between the first conductive layer and the semiconductor layer; a second charge storage layer that is provided between the second conductive layer and the semiconductor layer; a first high dielectric constant layer that is provided between the first conductive layer and the first charge storage layer; and a second high dielectric constant layer provided between the second conductive layer and the second charge storage layer. At least a portion of the first charge storage layer faces the second charge storage layer without the second high dielectric constant layer being interposed between the portion of the first charge storage layer and the second charge storage layer in the second direction.

公开(公告)号：US20230088864A1

公开(公告)日：2023-03-23

申请号：US17687379

申请日：2022-03-04

Applicant: Kioxia Corporation

Inventor： Yuta KAMIYA ,  Kazuhiro MATSUO ,  Kota TAKAHASHI ,  Masaya TODA ,  Tomoki ISHIMARU

IPC: H01L27/108 ,  H01L49/02 ,  H01L29/786 ,  H01L29/66

Abstract: A semiconductor memory device according to an embodiment includes: a first oxide semiconductor layer between a first conductive layer and a second conductive layer; a first gate electrode; a first electrode; a second electrode; a first capacitor insulating film between the first electrode and the second electrode including a first region and a second region between the first region and the second electrode, concentration of the Ti is higher in the second region than the first region; a third conductive layer; a second oxide semiconductor layer between the third conductive layer and a fourth conductive layer; a second gate electrode; a third electrode; a fourth electrode; and a second capacitor insulating film between the third electrode and the fourth electrode, and including a third region and a fourth region between the third region and the fourth electrode, concentration of Ti is higher in the fourth region than the third region.

公开(公告)号：US20220302169A1

公开(公告)日：2022-09-22

申请号：US17411733

申请日：2021-08-25

Applicant: KIOXIA CORPORATION

Inventor： Keisuke TAKAGI ,  Kazuhiro MATSUO ,  Kunifumi SUZUKI ,  Yuuichi KAMIMUTA ,  Taro SHIOKAWA ,  Masumi SAITOH ,  Yuta KAMIYA ,  Kota TAKAHASHI

IPC: H01L27/11597 ,  G11C16/04 ,  H01L27/1157 ,  H01L27/11582

Abstract: A semiconductor storage device includes a channel layer extending along a first direction and including titanium oxide, an electrode layer extending along a second direction crossing the first direction, and a ferroelectric layer between the channel layer and the electrode layer and including titanium.

公开(公告)号：US20240324170A1

公开(公告)日：2024-09-26

申请号：US18589286

申请日：2024-02-27

Applicant: Kioxia Corporation

Inventor： Masaya TODA ,  Kazuhiro MATSUO ,  Ha HOANG ,  Kota TAKAHASHI ,  Kenichiro TORATANI ,  Wakako MORIYAMA

IPC: H10B12/00

CPC classification number: H10B12/05 ,  H10B12/33

Abstract: A semiconductor device manufacturing method includes transferring a substrate including a structure that has a first surface at which indium is exposed, and a second surface at which a metal is exposed, to a chamber of a film forming device, supplying an indium reducing gas to the chamber at a first temperature at which indium is able to transition to a gaseous state, and supplying a film forming gas to the chamber at a second temperature higher than the first temperature to form a first film on the first surface and the second surface, after supplying the reducing gas.

公开(公告)号：US20240321995A1

公开(公告)日：2024-09-26

申请号：US18341865

申请日：2023-06-27

Applicant: Kioxia Corporation

Inventor： Masaya TODA ,  Kazuhiro MATSUO ,  Kota TAKAHASHI ,  Kenichiro TORATANI ,  Shosuke FUJII ,  Shoichi KABUYANAGI ,  Masayuki TANAKA ,  Wakako MORIYAMA

IPC: H01L29/49 ,  H01L29/66 ,  H01L29/775 ,  H01L29/786 ,  H10B12/00

CPC classification number: H01L29/4908 ,  H01L29/66969 ,  H01L29/775 ,  H01L29/78696 ,  H10B12/30 ,  H10B12/33 ,  H01L29/0676 ,  H01L29/413 ,  H01L29/42392 ,  H01L29/7869

Abstract: A semiconductor device of embodiments includes: a first electrode; a second electrode; an oxide semiconductor layer provided between the first electrode and the second electrode and including a first region, a second region, and a third region between the first region and the second region; a gate electrode facing the third region; a first insulating layer facing the first region; a second insulating layer facing the second region; and a gate insulating layer between the gate electrode and the oxide semiconductor layer, containing oxygen (O) and at least one metal element selected from a group consisting of Al, Hf, Zr, La, Y, Zn, In, Sn, and Ga, and having a chemical composition different from that of the oxide semiconductor layer.

公开(公告)号：US20230309310A1

公开(公告)日：2023-09-28

申请号：US17930889

申请日：2022-09-09

Applicant: Kioxia Corporation

Inventor： Yuta SAITO ,  Shinji MORI ,  Hiroyuki YAMASHITA ,  Satoshi NAGASHIMA ,  Kazuhiro MATSUO ,  Kota TAKAHASHI ,  Shota KASHIYAMA ,  Keiichi SAWA ,  Junichi KANEYAMA

IPC: H01L27/1158 ,  G11C5/06 ,  H01L27/1157

CPC classification number: H01L27/1157 ,  G11C5/063 ,  H01L27/1158

Abstract: A semiconductor device of embodiments includes: a semiconductor layer containing silicon (Si); a first insulating layer provided in a first direction of the semiconductor layer; a second insulating layer surrounded by the semiconductor layer in a first cross section perpendicular to the first direction and containing silicon (Si) and oxygen (O); a third insulating layer surrounded by the second insulating layer in the first cross section and containing a metal element and oxygen (O); and a conductive layer surrounded by the first insulating layer in a second cross section perpendicular to the first direction, provided in the first direction of the third insulating layer, and spaced from the semiconductor layer.