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    SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MEMORY DEVICE
    2.
    发明公开
    SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MEMORY DEVICE 审中-公开

    公开(公告)号：US20230290882A1

    公开(公告)日：2023-09-14

    申请号：US17897050

    申请日：2022-08-26

    Applicant: KIOXIA CORPORATION

    Inventor： Ha HOANG ,  Kazuhiro MATSUO ,  Tomoki ISHIMARU ,  Kenichiro TORATANI

    IPC: H01L29/786 ,  H01L27/108

    CPC classification number: H01L29/78642 ,  H01L27/1082 ,  H01L29/78693

    Abstract: According to one embodiment, a semiconductor device includes a first electrode, a second electrode, and an oxide semiconductor layer provided between the first electrode and the second electrode and including a first region, a second region between the first region and the second electrode, and a third region between the first region and the second region. A gate electrode surrounds the third region, and a gate insulating layer is between the gate electrode and the third region. A first resistivity of the first region is higher than a second resistivity of the second region. A first distance between the first electrode and the gate electrode in a first direction from the first electrode toward the second electrode is shorter than a second distance between the gate electrode and the second electrode in the first direction.

    SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MEMORY DEVICE
    3.
    发明申请
    SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MEMORY DEVICE 有权

    公开(公告)号：US20250107069A1

    公开(公告)日：2025-03-27

    申请号：US18884101

    申请日：2024-09-12

    Applicant: Kioxia Corporation

    Inventor： Takeru MAEDA ,  Sakuya KANEKO ,  Kenichiro TORATANI ,  Takafumi OCHIAI ,  Kazuhiro MATSUO ,  Masaya TODA ,  Ha HOANG ,  Kotaro NODA

    IPC: H10B12/00 ,  H01L29/786

    Abstract: According to one embodiment a semiconductor device includes an oxide semiconductor column that extends in a first direction. A first electrode contacts a first end of the oxide semiconductor column and a second electrode contacts a second end. A gate electrode surrounds a portion of the oxide semiconductor column. A first insulating film is between the gate electrode and the oxide semiconductor column. A second insulating film is between the gate electrode and the first electrode in the first direction and surrounds the oxide semiconductor column via the first insulating film. A region in which at least a part of the oxide semiconductor column is accommodated is formed by the gate electrode and the second insulating film, and the region has a stepped surface facing towards the second electrode.

    SEMICONDUCTOR DEVICE
    7.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20220189989A1

    公开(公告)日：2022-06-16

    申请号：US17410895

    申请日：2021-08-24

    Applicant: KIOXIA CORPORATION

    Inventor： Masaya TODA ,  Kota TAKAHASHI ,  Kazuhiro MATSUO ,  Yuta KAMIYA ,  Shinji MORI ,  Kenichiro TORATANI

    IPC: H01L27/11582 ,  H01L27/1157 ,  H01L21/28

    Abstract: A semiconductor device includes a stacked film of electrode layers and insulating layers. A charge storage layer is in a hole in the stacked film on a first insulating film. A channel layer is on the charge storage layer via a second insulating film. An adsorption promoting layer is on surfaces of a third insulating layer covering the insulating layers and the first insulating film facing the electrode layers. The third insulating film includes a first metal element and a first element, and the adsorption promoting layer includes a second element and a third element. The difference in electronegativity between the second element and the third element is larger than a difference in electronegativity between the first metal element and the first element.

    SEMICONDUCTOR MEMORY DEVICE
    8.
    发明申请
    SEMICONDUCTOR MEMORY DEVICE 有权

    公开(公告)号：US20210358925A1

    公开(公告)日：2021-11-18

    申请号：US17194629

    申请日：2021-03-08

    Applicant: Kioxia Corporation

    Inventor： Kota TAKAHASHI ,  Kazuhiro MATSUO ,  Shinji MORI ,  Yuta KAMIYA ,  Kenichiro TORATANI

    IPC: H01L27/1159 ,  H01L27/11587 ,  H01L27/11597

    Abstract: A memory device of an embodiment includes a stacked body including a plurality of insulating layers and a plurality of gate electrode layers alternately stacked in a first direction, a semiconductor layer provided in the stacked body and extending in the first direction, and a gate insulating layer provided between the semiconductor layer and the gate electrode layer, the gate insulating layer including a first region including a first oxide containing at least one of hafnium oxide or zirconium oxide, the first region including an orthorhombic crystal, and the first region including at least one first element selected from the group consisting of carbon (C), nitrogen (N), chlorine (Cl), boron (B), hydrogen (H), fluorine (F), helium (He), and argon (Ar).

    SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
    10.
    发明公开
    SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开

    公开(公告)号：US20230309301A1

    公开(公告)日：2023-09-28

    申请号：US17844585

    申请日：2022-06-20

    Applicant: Kioxia Corporation

    Inventor： Yuta KAMIYA ,  Kenichiro TORATANI ,  Kazuhiro MATSUO ,  Shoji HONDA ,  Takuya HIROHASHI ,  Borong CHEN ,  Kota TAKAHASHI

    IPC: H01L27/11582

    CPC classification number: H01L27/11582

    Abstract: In one embodiment, a method of manufacturing a semiconductor device includes forming a first film including oxygen. The method further includes forming a second film including nitrogen. The method further includes etching surfaces of the first film and the second film using a substance including a halogen. The method further includes forming a third film including nitrogen on the surfaces of the first film and the second film. The third film is formed by alternately performing first processes and second processes, wherein each of the first processes forms a portion of the third film, and each of the second processes etches a portion of the third film using a substance including a halogen.

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