公开(公告)号：US20130302592A1

公开(公告)日：2013-11-14

申请号：US13684291

申请日：2012-11-23

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Wook Seong LEE ,  Hak Joo LEE ,  Young Joon BAIK ,  Jong Keuk PARK

IPC: C23C16/26

CPC classification number: C23C16/26 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/18 ,  Y10S977/842 ,  Y10T428/25

Abstract: A method for growing carbon nanoflakes includes inducing partial etching of graphene layers of carbon nanotubes through an adequate composition of precursor gases, CH4, H2 and Ar, while allowing carbon nanoflakes to grow at the etched site in a plane-like shape. A carbon nanoflake structure is formed by the same method. The method for growing carbon nanoflakes includes: providing a silicon substrate having carbon nanotubes; and growing carbon nanoflakes on the carbon nanotubes through a chemical vapor deposition process using a mixed gas of CH4, H2 and Ar as a precursor. During the chemical vapor deposition process, the mixed gas of CH4, H2 and Ar is in an atmosphere with excess Ar, graphene layers forming the carbon nanotubes are etched partially under the atmosphere with excess Ar, and graphene layers of carbon nanoflakes are grown at the etched site.

Abstract translation: 用于生长碳纳米片的方法包括通过前体气体CH 4，H 2和Ar的适当组成诱导部分蚀刻碳纳米管的石墨烯层，同时允许碳纳米片在蚀刻部位以平面状形成生长。 通过相同的方法形成碳纳米薄层结构。 生长碳纳米片的方法包括：提供具有碳纳米管的硅衬底; 并通过使用CH 4，H 2和Ar的混合气体作为前体的化学气相沉积方法在碳纳米管上生长碳纳米片。 在化学气相沉积过程中，CH4，H2和Ar的混合气体处于具有多余Ar的气氛中，形成碳纳米管的石墨烯层部分地在大气中被多余的Ar蚀刻，碳纳米片的石墨烯层在 蚀刻的地点。

公开(公告)号：US20130295387A1

公开(公告)日：2013-11-07

申请号：US13744557

申请日：2013-01-18

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Young Joon BAIK ,  Jong Keuk PARK ,  Wook Seong LEE

IPC: C23C16/34

CPC classification number: C23C16/342 ,  C23C14/024 ,  C23C14/06 ,  C23C14/0647 ,  C23C14/34 ,  C23C14/46 ,  C23C16/271 ,  Y10T428/30

Abstract: A method for producing a cubic boron nitride (cBN) thin film includes depositing cBN onto nanocrystalline diamond having controlled surface irregularity characteristics to improve the adhesion at the interface of cBN/nanocrystalline diamond, while incorporating hydrogen to a reaction gas upon the synthesis of cBN and controlling the feed time of hydrogen, so that harmful reactions occurring on a surface of nanocrystalline diamond and residual stress applied to cBN may be inhibited. Also, a cBN thin film structure is obtained by the method. The cBN thin film is formed on the nanocrystalline diamond thin film by using a physical vapor deposition process, wherein a reaction gas supplied when the deposition of a thin film occurs is a mixed gas of argon (Ar) with nitrogen (N2), and hydrogen (H2) is added to the reaction gas at a time after the deposition of a thin film occurs.

Abstract translation: 立方氮化硼（cBN）薄膜的制造方法包括将cBN沉积到具有受控的表面不规则特性的纳米晶体金刚石上，以改善在cBN /纳米晶体金刚石的界面处的粘合性，同时在合成cBN时将氢气加入到反应气体中， 控制氢的进料时间，从而可以抑制在金刚石表面发生的有害反应和施加到cBN上的残余应力。 此外，通过该方法获得cBN薄膜结构。 通过使用物理气相沉积工艺在纳米晶体金刚石薄膜上形成cBN薄膜，其中当发生薄膜沉积时供应的反应气体是氩（Ar）与氮气（N 2）的混合气体，氢气 在发生薄膜沉积之后的时刻将（H2）加入到反应气体中。

公开(公告)号：US20130266742A1

公开(公告)日：2013-10-10

申请号：US13728170

申请日：2012-12-27

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Young Joon BAIK ,  Jong Keuk PARK ,  Wook Seong LEE

IPC: C23C16/27

CPC classification number: C23C16/27 ,  C23C16/271 ,  C23C16/463

Abstract: The present disclosure relates to a chemical vapor deposition apparatus for synthesizing a diamond film and a method for synthesizing a diamond film using the same, which maintains the substrate temperature at an optimum level by suppressing the rise of a substrate temperature, and, thus, improves the degree of activation of a diamond synthesizing gas to increase a diamond growth rate when synthesizing a diamond film. The chemical vapor deposition apparatus for synthesizing a diamond film according to the present disclosure includes a chamber in which a chemical vapor deposition process is performed, a substrate provided in the chamber and giving a place where diamond is grown, and a heat-shielding structure spaced above from the substrate, wherein the heat-shielding structure includes an opening through which a precursor gas is transferable.

Abstract translation: 本公开内容涉及用于合成金刚石膜的化学气相沉积装置和使用其的金刚石膜的合成方法，其通过抑制衬底温度的升高将衬底温度保持在最佳水平，因此改善 当合成金刚石膜时金刚石合成气体的活化程度增加金刚石生长速率。 根据本公开的用于合成金刚石膜的化学气相沉积设备包括其中进行化学气相沉积工艺的腔室，设置在腔室中并提供金刚石生长的地方的衬底和间隔开的热屏蔽结构 其中所述热屏蔽结构包括可以转移前体气体的开口。