公开(公告)号：US20150146180A1

公开(公告)日：2015-05-28

申请号：US14253522

申请日：2014-04-15

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Kyeong Seok LEE ,  Won Mok KIM ,  Taek Sung LEE ,  Wook Seong LEE ,  Doo Seok JEONG ,  Inho KIM

IPC: G02B5/00 ,  G01N21/552 ,  G02B5/02 ,  G03F7/38

CPC classification number: G02B5/008 ,  B82Y15/00 ,  B82Y40/00 ,  G01N21/554 ,  G02B5/0278 ,  G03F7/2014 ,  G03F7/70375

Abstract: A method for fabricating a nanoantenna array may include forming a resist layer on a substrate, forming a focusing layer having a dielectric microstructure array on the resist layer, diffusing light one-dimensionally in a specific direction by using a linear diffuser, forming an anisotropic pattern on the resist layer by illuminating the light diffused by the linear diffuser on the focusing layer and the resist layer, depositing a material suitable for a plasmonic resonance onto the substrate and the resist layer on which the pattern is formed, and forming a nanoantenna array on the substrate by removing the resist layer and the material deposited on the resist layer. A light diffusing angle by the linear diffuser and a size of the dielectric microstructure are determined based on an aspect ratio of the pattern to be formed.

Abstract translation: 制造纳米天线阵列的方法可以包括在基板上形成抗蚀剂层，在抗蚀剂层上形成具有电介质微结构阵列的聚焦层，通过使用线性漫射器在特定方向上一维地漫射光，形成各向异性图案 在抗蚀剂层上通过在聚焦层和抗蚀剂层上照射由线性扩散器扩散的光，将适合于等离子体激元谐振的材料沉积到衬底上并形成图案的抗蚀剂层上，并形成纳米天线阵列 通过去除抗蚀剂层和沉积在抗蚀剂层上的材料来形成衬底。 基于要形成的图案的纵横比来确定通过线性漫射器的光散射角和电介质微结构的尺寸。

公开(公告)号：US20140255286A1

公开(公告)日：2014-09-11

申请号：US13903309

申请日：2013-05-28

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Young Joon BAIK ,  Jong-Keuk PARK ,  Wook Seong LEE

IPC: C23C16/34

CPC classification number: C23C16/342 ,  C23C14/0647 ,  C23C14/345

Abstract: A method for manufacturing a cubic boron nitride (c-BN) thin film includes: applying a pulse-type bias voltage to a substrate; and forming the cubic boron nitride thin film by bombarding the substrate with ions using the pulse-type bias voltage. To control the compressive residual stress of the cubic boron nitride thin film, ON/OFF time ratio of the pulse-type bias voltage may be controlled. The compressive residual stress that is applied to the thin film can be minimized by using the pulse-type voltage as a negative bias voltage applied to the substrate. In addition, the deposition of the c-BN thin film can be performed in a low ion energy region by increasing the ion/neutral particle flux ratio through the control of the ON/OFF time ratio of the pulse-type voltage.

Abstract translation: 立方氮化硼（c-BN）薄膜的制造方法包括：向基板施加脉冲型偏置电压; 以及通过使用脉冲型偏置电压用离子轰击衬底来形成立方氮化硼薄膜。 为了控制立方氮化硼薄膜的压缩残余应力，可以控制脉冲型偏置电压的ON / OFF时间比。 通过使用脉冲型电压作为施加到基板的负偏置电压，可以使施加到薄膜的压缩残余应力最小化。 此外，通过控制脉冲型电压的ON / OFF时间比，可以通过增加离子/中性粒子通量比，在低离子能量区域中进行c-BN薄膜的沉积。

公开(公告)号：US20180038003A1

公开(公告)日：2018-02-08

申请号：US15608082

申请日：2017-05-30

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Wook Seong LEE ,  Young-Jin KO ,  Young Joon BAIK ,  Jong-Keuk PARK ,  Kyeong Seok LEE ,  Inho KIM ,  Doo Seok JEONG

IPC: C25B11/04 ,  C23C16/32 ,  C25B11/02

Abstract: A method for manufacturing an electrode for hydrogen production using a tungsten carbide nanoflake may include: forming a tungsten carbide nanoflake on a nanocrystalline diamond film by means of a chemical vapor deposition process in which hydrogen plasma is applied; and increasing activity of the tungsten carbide nanoflake to a hydrogen evolution reaction by removing an oxide layer or a graphene layer from a surface of the tungsten carbide nanoflake. Since an oxide layer and/or a graphene layer of a surface of tungsten carbide is removed by means of cyclic cleaning after tungsten carbide is formed, hydrogen evolution reaction (HER) activity of the tungsten carbide may be increased, thereby enhancing utilization as a catalyst electrode.

公开(公告)号：US20130202849A1

公开(公告)日：2013-08-08

申请号：US13759730

申请日：2013-02-05

Applicant: Korea Institute of Science and Technology

Inventor： Young Joon BAIK ,  Jong Keuk PARK ,  Wook Seong LEE

IPC: C23C16/30

CPC classification number: C23C16/30 ,  C23C16/271 ,  C23C16/279 ,  Y10T428/24355

Abstract: Provided are polycrystalline diamond for drawing dies, which inhibits preferential wear along specific lattice planes while ensuring wear resistance by controlling the shape and orientation of the grains forming polycrystalline diamond solid, and a method for fabricating the same. The polycrystalline diamond for drawing dies includes a section of diamond having an isotropic granular structure or a radially oriented texture, or has a stacked structure including an isotropic granular layer and a radial texture layer alternately in multiple layers.

Abstract translation: 提供了用于拉丝模具的多晶金刚石，其通过控制形成多晶金刚石固体的晶粒的形状和取向来确保耐磨性，从而抑制特定晶格面的优先磨损及其制造方法。 用于拉丝模具的多晶金刚石包括具有各向同性粒状结构或径向定向织构的金刚石截面，或者具有包括多层交替的各向同性粒状层和径向纹理层的堆叠结构。

公开(公告)号：US20160221156A1

公开(公告)日：2016-08-04

申请号：US14970923

申请日：2015-12-16

Applicant: Korea Institute of Science and Technology

Inventor： Young Joon BAIK ,  Jong-Keuk PARK ,  Wook Seong LEE

IPC: B24D18/00 ,  C01B31/36

CPC classification number: B24D18/00 ,  C01B32/956

Abstract: A superhard boron carbide thin film with superior high temperature oxidation resistance has a structure in which a boron carbide layer and a silicon carbide layer are repeatedly stacked in an alternating manner. Accordingly, the high temperature oxidation resistance of the boron carbide thin film is enhanced, allowing the application as coating materials for wear resistant tools such as cutting tools.

Abstract translation: 具有优异的高温抗氧化性的超硬碳化硼薄膜具有以交替方式重复堆叠碳化硼层和碳化硅层的结构。 因此，提高了碳化硼薄膜的高温抗氧化性，可以作为耐磨工具如切削工具的涂料。

公开(公告)号：US20130260157A1

公开(公告)日：2013-10-03

申请号：US13799419

申请日：2013-03-13

Applicant: Korea Institute Of Science And Technology

Inventor： Wook Seong LEE ,  Hak Joo LEE ,  Young Joon BAIK ,  Jong Keuk PARK

IPC: C23C16/27

CPC classification number: C23C16/27 ,  C23C16/02 ,  C23C16/0254 ,  C23C16/271 ,  C23C16/272

Abstract: A uniform nanocrystalline diamond thin film with minimized voids is formed on a silicon oxide-coated substrate and a method for fabricating same are disclosed. The nanocrystalline diamond thin film is formed by performing hydrogen plasma treatment, hydrocarbon plasma treatment or hydrocarbon thermal treatment on the substrate surface to maximize electrostatic attraction between the substrate surface and nanodiamond particles during the following ultrasonic seeding such that the nanodiamond particles are uniformly distributed and bound on the silicon oxide on the substrate.

Abstract translation: 在氧化硅涂覆的基板上形成具有最小空隙的均匀的纳米晶金刚石薄膜，并且公开了其制造方法。 通过在衬底表面上进行氢等离子体处理，烃等离子体处理或碳氢化合物热处理来形成纳米晶体金刚石薄膜，以在随后的超声波接种期间使衬底表面和纳米金刚石颗粒之间的静电吸引最大化，使得纳米金刚石颗粒均匀分布和结合 在基板上的氧化硅上。

公开(公告)号：US20130168789A1

公开(公告)日：2013-07-04

申请号：US13723555

申请日：2012-12-21

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Taek Sung LEE ,  Kyeong Seok LEE ,  In Ho KIM ,  Wook Seong LEE ,  Doo Seok JEONG ,  Won Mok KIM ,  Byung Ki CHEONG

IPC: H01L31/032 ,  H01L31/18

CPC classification number: H01L31/186 ,  B82Y15/00 ,  G01N21/554 ,  G01N33/54373 ,  G02B5/008 ,  H01L31/0324 ,  H01L31/18

Abstract: A localized surface plasmon resonance sensor may include a localized surface plasmon excitation layer including a chalcogenide material. The chalcogenide material may include: a first material including at least one of selenium (Se) and tellurium (Te); and a second material including at least one of germanium (Ge) and antimony (Sb). The localized surface plasmon excitation layer may be prepared by forming a thin film including the chalcogenide material and crystallizing the thin film to have a predetermined pattern by irradiating laser on the thin film.

Abstract translation: 局部表面等离子体共振传感器可以包括含有硫族化物材料的局部表面等离子体激元层。 硫族化物材料可以包括：包含硒（Se）和碲（Te）中的至少一种的第一材料; 和包含锗（Ge）和锑（Sb）中的至少一种的第二材料。 局部表面等离子体激发层可以通过形成包括硫属化物材料的薄膜并通过在薄膜上照射激光来使薄膜结晶以具有预定图案来制备。

公开(公告)号：US20150116856A1

公开(公告)日：2015-04-30

申请号：US14219506

申请日：2014-03-19

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Kyeong Seok LEE ,  Won Mok KIM ,  Taek Sung LEE ,  Wook Seong LEE ,  Doo Seok JEONG ,  Inho KIM

IPC: G02B5/20 ,  C23C16/06

CPC classification number: G02B5/206 ,  B82Y20/00 ,  C23C14/0015 ,  C23C14/0688 ,  C23C14/3464 ,  G02B5/008 ,  G02B5/26 ,  Y10S977/932

Abstract: A plasmonic nano-color coating layer includes a composite layer including a plurality of metal particle layers and a plurality of matrix layers and having a periodic multilayer structure in which the metal particle layers and the matrix layers are alternately arranged, a dielectric buffer layer located below the composite layer, and a mirror layer located below the dielectric buffer layer, wherein the color of the plasmonic nano-color coating layer is determined based on a nominal thickness of the metal particle layer and a separation between the metal particle layers.

Abstract translation: 等离子体激光纳米彩色涂层包括复合层，该复合层包括多个金属颗粒层和多个矩阵层，并且具有周期性多层结构，其中金属颗粒层和矩阵层交替布置，介质缓冲层位于下面 复合层和位于介质缓冲层下面的镜层，其中基于金属颗粒层的标称厚度和金属颗粒层之间的间隔来确定等离子体激元纳米彩色涂层的颜色。

公开(公告)号：US20140004032A1

公开(公告)日：2014-01-02

申请号：US13929941

申请日：2013-06-28

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Young Joon BAIK ,  Jong Keuk PARK ,  Wook Seong LEE

IPC: C01B31/06

CPC classification number: C01B32/25

Abstract: Provided are a method and an apparatus for rapid growth of a diamond capable of synthesizing a diamond having a large area and increasing a rate of synthesis of the diamond. The method for rapid growth of a diamond according to the present disclosure using a hot filament chemical vapor deposition (HFCVD) method includes: controlling a concentration of atomic hydrogen by controlling a flow rate of a precursor gas including hydrogen and hydrocarbon; and providing a solid phase carbon source which is etched by atomic hydrogen to increase a degree of supersaturation of a carbon source in a chamber of an HFCVD apparatus.

Abstract translation: 提供了能够合成具有大面积并增加金刚石合成速度的金刚石的金刚石的快速生长的方法和装置。 根据本公开使用热丝化学气相沉积（HFCVD）方法快速生长金刚石的方法包括：通过控制包括氢和烃的前体气体的流速来控制原子氢的浓度; 并提供由原子氢蚀刻的固相碳源，以增加HFCVD装置的腔室中碳源的过饱和度。

公开(公告)号：US20130273395A1

公开(公告)日：2013-10-17

申请号：US13746185

申请日：2013-01-21

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Wook Seong LEE ,  Hak Joo LEE ,  Young Joon BAIK ,  Jong Keuk PARK

IPC: C23C16/32

CPC classification number: C23C16/32 ,  C23C16/4488

Abstract: 2-dimensional nanostructured tungsten carbide which is obtained by control of the alignment of nanostructure during growth of tungsten carbide through control of the degree of supersaturation and a method for fabricating same are disclosed. The method for fabricating 2-dimensional nanostructured tungsten carbide employs a chemical vapor deposition process wherein a hydrogen plasma is applied to prepare 2-dimensional nanostructured tungsten carbide vertically aligned on a nanocrystalline diamond film. The chemical vapor deposition process wherein the hydrogen plasma is applied includes: disposing a substrate with the nanocrystalline diamond film formed thereon on an anode in a chamber, disposing a surface-carburized tungsten cathode above and at a distance from the substrate, and applying the hydrogen plasma into the chamber.

Abstract translation: 公开了通过控制碳酸钨生长期间纳米结构的取向控制而获得的二维纳米结构碳化钨，其过饱和度及其制造方法。 用于制造二维纳米结构碳化钨的方法采用化学气相沉积方法，其中施加氢等离子体以制备在纳米晶体金刚石膜上垂直对准的二维纳米结构碳化钨。 其中施加氢等离子体的化学气相沉积方法包括：将其上形成有纳米晶体金刚石膜的衬底设置在室中的阳极上，将表面渗碳的钨阴极在衬底之上和距离衬底处设置，并施加氢 等离子体进入室。