Abstract:
The present disclosure relates to a Se or S based thin film solar cell and a method for fabricating the same, which may improve crystallinity and electric characteristics of an upper transparent electrode layer (6) by controlling a structure of a lower transparent electrode layer (5′) in a thin film solar cell having a Se or S based light absorption layer. In the Se or S based thin film solar cell according to the present disclosure, the front transparent electrode layer comprises a lower transparent electrode layer (5′) and an upper transparent electrode layer (6), and the lower transparent electrode layer (5′) comprises an amorphous oxide-based thin film.
Abstract:
A uniform nanocrystalline diamond thin film with minimized voids is formed on a silicon oxide-coated substrate and a method for fabricating same are disclosed. The nanocrystalline diamond thin film is formed by performing hydrogen plasma treatment, hydrocarbon plasma treatment or hydrocarbon thermal treatment on the substrate surface to maximize electrostatic attraction between the substrate surface and nanodiamond particles during the following ultrasonic seeding such that the nanodiamond particles are uniformly distributed and bound on the silicon oxide on the substrate.
Abstract:
Provided are an autonomous driving system and a correction learning method for autonomous driving. The autonomous driving system includes a sensor configured to collect and output data required for autonomous driving, a first processor configured to output autonomous driving data on the basis of data input from the sensor, a second processor configured to output a driving data adjustment value on the basis of differences between the data input from the sensor, the autonomous driving data input from the first processor, and driving data input from driving by a human driver, and a driving part configured to perform driving on the basis of the autonomous driving data output from the first processor and the driving data adjustment value output from the second processor.
Abstract:
Provided are a method and an apparatus for rapid growth of a diamond capable of synthesizing a diamond having a large area and increasing a rate of synthesis of the diamond. The method for rapid growth of a diamond according to the present disclosure using a hot filament chemical vapor deposition (HFCVD) method includes: controlling a concentration of atomic hydrogen by controlling a flow rate of a precursor gas including hydrogen and hydrocarbon; and providing a solid phase carbon source which is etched by atomic hydrogen to increase a degree of supersaturation of a carbon source in a chamber of an HFCVD apparatus.
Abstract:
2-dimensional nanostructured tungsten carbide which is obtained by control of the alignment of nanostructure during growth of tungsten carbide through control of the degree of supersaturation and a method for fabricating same are disclosed. The method for fabricating 2-dimensional nanostructured tungsten carbide employs a chemical vapor deposition process wherein a hydrogen plasma is applied to prepare 2-dimensional nanostructured tungsten carbide vertically aligned on a nanocrystalline diamond film. The chemical vapor deposition process wherein the hydrogen plasma is applied includes: disposing a substrate with the nanocrystalline diamond film formed thereon on an anode in a chamber, disposing a surface-carburized tungsten cathode above and at a distance from the substrate, and applying the hydrogen plasma into the chamber.
Abstract:
Provided is a method of operating a neuron in a neuromorphic system. The method includes evaluating a membrane potential value at a corresponding time when receiving an input spike, time-modulating a synaptic weight of the membrane potential value and converting the time-modulated synaptic weight into a membrane potential value at a reference time, and generating an output spike when the membrane potential value at the reference time exceeds a certain threshold value. The membrane potential value at the reference time is represented by a floating point number including a predetermined bit of exponent and mantissa, and the floating point number includes time information. The method further includes accessing a memory and scanning a neural state variable when a timer is updated to “0” to update the neural state variable to an updated value at a reference time.
Abstract:
Provided is a chalcogenide solar cell including a substrate, a transparent conducting oxide (TCO) back contact provided on the substrate, a chalcogenide light absorbing layer provided on the TCO back contact and including at least copper (Cu), gallium (Ga), and silver (Ag), and a TCO front contact provided on the chalcogenide light absorbing layer, wherein a Cu-rich region having a content of Cu higher than an average Cu content of the chalcogenide light absorbing layer is provided at an interface where the chalcogenide light absorbing layer is in contact with the TCO back contact.
Abstract:
Provided is a method of fabricating a see-through thin film solar cell, the method including preparing a substrate including a molybdenum (Mo) layer on one surface, forming see-through patterns by selectively removing at least parts of the Mo layer, sequentially depositing a chalcogenide absorber layer, a buffer layer, and a transparent electrode layer on the substrate and the Mo layer including the see-through patterns, and forming a see-through array according to a shape of the see-through patterns by removing the chalcogenide absorber layer, the buffer layer, and the transparent electrode layer deposited on the see-through patterns, by irradiating a laser beam from under the substrate toward the transparent electrode layer.
Abstract:
Provided is a chalcogenide thin film solar cell having a transparent back electrode, including a transparent substrate, a photoactive layer including an S, Se-based chalcogenide material, and a back electrode disposed between the transparent substrate and the photoactive layer and including a transparent conductive oxide containing titanium (Ti).
Abstract:
Provided are polycrystalline diamond for drawing dies, which inhibits preferential wear along specific lattice planes while ensuring wear resistance by controlling the shape and orientation of the grains forming polycrystalline diamond solid, and a method for fabricating the same. The polycrystalline diamond for drawing dies includes a section of diamond having an isotropic granular structure or a radially oriented texture, or has a stacked structure including an isotropic granular layer and a radial texture layer alternately in multiple layers.