公开(公告)号：US20140326319A1

公开(公告)日：2014-11-06

申请号：US13943088

申请日：2013-07-16

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Won Mok KIM ,  Jin-soo KIM ,  Jeung-hyun JEONG ,  Jong-Keuk PARK ,  Young Joon BAIK

IPC: H01L31/0224

CPC classification number: H01L31/022483 ,  H01L31/022466

Abstract: The present disclosure relates to a Se or S based thin film solar cell and a method for fabricating the same, which may improve the structural and electrical characteristics of an upper transparent electrode layer by controlling a structure of a lower transparent electrode layer in a thin film solar cell having a Se or S based light absorption layer. In the Se or S based thin film solar cell having a light absorption layer and a front transparent electrode layer, the front transparent electrode layer comprises a lower transparent electrode layer and an upper transparent electrode layer, and the lower transparent electrode layer comprises an oxide-based thin film obtained by blending an impurity element into a mixed oxide in which Zn oxide and Mg oxide are mixed (also, referred to as an ‘impurity-doped Zn—Mg-based oxide thin film’).

Abstract translation: 本发明涉及一种基于Se或S的薄膜太阳能电池及其制造方法，其可以通过控制薄膜中的下部透明电极层的结构来改善上部透明电极层的结构和电学特性 具有Se或S的光吸收层的太阳能电池。 在具有光吸收层和前透明电极层的Se或S基薄膜太阳能电池中，前透明电极层包括下透明电极层和上透明电极层，下透明电极层包括氧化物 - 通过将杂质元素混合到其中混合有Zn氧化物和Mg氧化物的混合氧化物（也称为“杂质掺杂的Zn-Mg基氧化物薄膜”）中获得的基于薄膜的薄膜。

公开(公告)号：US20140255286A1

公开(公告)日：2014-09-11

申请号：US13903309

申请日：2013-05-28

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Young Joon BAIK ,  Jong-Keuk PARK ,  Wook Seong LEE

IPC: C23C16/34

CPC classification number: C23C16/342 ,  C23C14/0647 ,  C23C14/345

Abstract: A method for manufacturing a cubic boron nitride (c-BN) thin film includes: applying a pulse-type bias voltage to a substrate; and forming the cubic boron nitride thin film by bombarding the substrate with ions using the pulse-type bias voltage. To control the compressive residual stress of the cubic boron nitride thin film, ON/OFF time ratio of the pulse-type bias voltage may be controlled. The compressive residual stress that is applied to the thin film can be minimized by using the pulse-type voltage as a negative bias voltage applied to the substrate. In addition, the deposition of the c-BN thin film can be performed in a low ion energy region by increasing the ion/neutral particle flux ratio through the control of the ON/OFF time ratio of the pulse-type voltage.

Abstract translation: 立方氮化硼（c-BN）薄膜的制造方法包括：向基板施加脉冲型偏置电压; 以及通过使用脉冲型偏置电压用离子轰击衬底来形成立方氮化硼薄膜。 为了控制立方氮化硼薄膜的压缩残余应力，可以控制脉冲型偏置电压的ON / OFF时间比。 通过使用脉冲型电压作为施加到基板的负偏置电压，可以使施加到薄膜的压缩残余应力最小化。 此外，通过控制脉冲型电压的ON / OFF时间比，可以通过增加离子/中性粒子通量比，在低离子能量区域中进行c-BN薄膜的沉积。

公开(公告)号：US20180038003A1

公开(公告)日：2018-02-08

申请号：US15608082

申请日：2017-05-30

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Wook Seong LEE ,  Young-Jin KO ,  Young Joon BAIK ,  Jong-Keuk PARK ,  Kyeong Seok LEE ,  Inho KIM ,  Doo Seok JEONG

IPC: C25B11/04 ,  C23C16/32 ,  C25B11/02

Abstract: A method for manufacturing an electrode for hydrogen production using a tungsten carbide nanoflake may include: forming a tungsten carbide nanoflake on a nanocrystalline diamond film by means of a chemical vapor deposition process in which hydrogen plasma is applied; and increasing activity of the tungsten carbide nanoflake to a hydrogen evolution reaction by removing an oxide layer or a graphene layer from a surface of the tungsten carbide nanoflake. Since an oxide layer and/or a graphene layer of a surface of tungsten carbide is removed by means of cyclic cleaning after tungsten carbide is formed, hydrogen evolution reaction (HER) activity of the tungsten carbide may be increased, thereby enhancing utilization as a catalyst electrode.

公开(公告)号：US20130202849A1

公开(公告)日：2013-08-08

申请号：US13759730

申请日：2013-02-05

Applicant: Korea Institute of Science and Technology

Inventor： Young Joon BAIK ,  Jong Keuk PARK ,  Wook Seong LEE

IPC: C23C16/30

CPC classification number: C23C16/30 ,  C23C16/271 ,  C23C16/279 ,  Y10T428/24355

Abstract: Provided are polycrystalline diamond for drawing dies, which inhibits preferential wear along specific lattice planes while ensuring wear resistance by controlling the shape and orientation of the grains forming polycrystalline diamond solid, and a method for fabricating the same. The polycrystalline diamond for drawing dies includes a section of diamond having an isotropic granular structure or a radially oriented texture, or has a stacked structure including an isotropic granular layer and a radial texture layer alternately in multiple layers.

Abstract translation: 提供了用于拉丝模具的多晶金刚石，其通过控制形成多晶金刚石固体的晶粒的形状和取向来确保耐磨性，从而抑制特定晶格面的优先磨损及其制造方法。 用于拉丝模具的多晶金刚石包括具有各向同性粒状结构或径向定向织构的金刚石截面，或者具有包括多层交替的各向同性粒状层和径向纹理层的堆叠结构。

公开(公告)号：US20160221156A1

公开(公告)日：2016-08-04

申请号：US14970923

申请日：2015-12-16

Applicant: Korea Institute of Science and Technology

Inventor： Young Joon BAIK ,  Jong-Keuk PARK ,  Wook Seong LEE

IPC: B24D18/00 ,  C01B31/36

CPC classification number: B24D18/00 ,  C01B32/956

Abstract: A superhard boron carbide thin film with superior high temperature oxidation resistance has a structure in which a boron carbide layer and a silicon carbide layer are repeatedly stacked in an alternating manner. Accordingly, the high temperature oxidation resistance of the boron carbide thin film is enhanced, allowing the application as coating materials for wear resistant tools such as cutting tools.

Abstract translation: 具有优异的高温抗氧化性的超硬碳化硼薄膜具有以交替方式重复堆叠碳化硼层和碳化硅层的结构。 因此，提高了碳化硼薄膜的高温抗氧化性，可以作为耐磨工具如切削工具的涂料。

公开(公告)号：US20130327387A1

公开(公告)日：2013-12-12

申请号：US13729275

申请日：2012-12-28

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Won Mok KIM ,  Jin Soo KIM ,  Jeung Hyun JEONG ,  Young Joon BAIK ,  Jong Keuk PARK

IPC: H01L31/0224 ,  H01L31/18

CPC classification number: H01L31/022483 ,  H01L31/1884 ,  Y02E10/50

Abstract: The present disclosure relates to a Se or S based thin film solar cell and a method for fabricating the same, which may improve crystallinity and electric characteristics of an upper transparent electrode layer (6) by controlling a structure of a lower transparent electrode layer (5′) in a thin film solar cell having a Se or S based light absorption layer. In the Se or S based thin film solar cell according to the present disclosure, the front transparent electrode layer comprises a lower transparent electrode layer (5′) and an upper transparent electrode layer (6), and the lower transparent electrode layer (5′) comprises an amorphous oxide-based thin film.

Abstract translation: 本发明涉及一种基于Se或S的薄膜太阳能电池及其制造方法，其可以通过控制下部透明电极层（5）的结构来改善上部透明电极层（6）的结晶度和电特性 '）在具有Se或S基光吸收层的薄膜太阳能电池中。 在根据本公开的Se或S基薄膜太阳能电池中，前透明电极层包括下透明电极层（5'）和上透明电极层（6），下透明电极层（5' ）包括无定形氧化物基薄膜。

公开(公告)号：US20130260157A1

公开(公告)日：2013-10-03

申请号：US13799419

申请日：2013-03-13

Applicant: Korea Institute Of Science And Technology

Inventor： Wook Seong LEE ,  Hak Joo LEE ,  Young Joon BAIK ,  Jong Keuk PARK

IPC: C23C16/27

CPC classification number: C23C16/27 ,  C23C16/02 ,  C23C16/0254 ,  C23C16/271 ,  C23C16/272

Abstract: A uniform nanocrystalline diamond thin film with minimized voids is formed on a silicon oxide-coated substrate and a method for fabricating same are disclosed. The nanocrystalline diamond thin film is formed by performing hydrogen plasma treatment, hydrocarbon plasma treatment or hydrocarbon thermal treatment on the substrate surface to maximize electrostatic attraction between the substrate surface and nanodiamond particles during the following ultrasonic seeding such that the nanodiamond particles are uniformly distributed and bound on the silicon oxide on the substrate.

Abstract translation: 在氧化硅涂覆的基板上形成具有最小空隙的均匀的纳米晶金刚石薄膜，并且公开了其制造方法。 通过在衬底表面上进行氢等离子体处理，烃等离子体处理或碳氢化合物热处理来形成纳米晶体金刚石薄膜，以在随后的超声波接种期间使衬底表面和纳米金刚石颗粒之间的静电吸引最大化，使得纳米金刚石颗粒均匀分布和结合 在基板上的氧化硅上。

公开(公告)号：US20140004032A1

公开(公告)日：2014-01-02

申请号：US13929941

申请日：2013-06-28

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Young Joon BAIK ,  Jong Keuk PARK ,  Wook Seong LEE

IPC: C01B31/06

CPC classification number: C01B32/25

Abstract: Provided are a method and an apparatus for rapid growth of a diamond capable of synthesizing a diamond having a large area and increasing a rate of synthesis of the diamond. The method for rapid growth of a diamond according to the present disclosure using a hot filament chemical vapor deposition (HFCVD) method includes: controlling a concentration of atomic hydrogen by controlling a flow rate of a precursor gas including hydrogen and hydrocarbon; and providing a solid phase carbon source which is etched by atomic hydrogen to increase a degree of supersaturation of a carbon source in a chamber of an HFCVD apparatus.

Abstract translation: 提供了能够合成具有大面积并增加金刚石合成速度的金刚石的金刚石的快速生长的方法和装置。 根据本公开使用热丝化学气相沉积（HFCVD）方法快速生长金刚石的方法包括：通过控制包括氢和烃的前体气体的流速来控制原子氢的浓度; 并提供由原子氢蚀刻的固相碳源，以增加HFCVD装置的腔室中碳源的过饱和度。

公开(公告)号：US20130273395A1

公开(公告)日：2013-10-17

申请号：US13746185

申请日：2013-01-21

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Wook Seong LEE ,  Hak Joo LEE ,  Young Joon BAIK ,  Jong Keuk PARK

IPC: C23C16/32

CPC classification number: C23C16/32 ,  C23C16/4488

Abstract: 2-dimensional nanostructured tungsten carbide which is obtained by control of the alignment of nanostructure during growth of tungsten carbide through control of the degree of supersaturation and a method for fabricating same are disclosed. The method for fabricating 2-dimensional nanostructured tungsten carbide employs a chemical vapor deposition process wherein a hydrogen plasma is applied to prepare 2-dimensional nanostructured tungsten carbide vertically aligned on a nanocrystalline diamond film. The chemical vapor deposition process wherein the hydrogen plasma is applied includes: disposing a substrate with the nanocrystalline diamond film formed thereon on an anode in a chamber, disposing a surface-carburized tungsten cathode above and at a distance from the substrate, and applying the hydrogen plasma into the chamber.

Abstract translation: 公开了通过控制碳酸钨生长期间纳米结构的取向控制而获得的二维纳米结构碳化钨，其过饱和度及其制造方法。 用于制造二维纳米结构碳化钨的方法采用化学气相沉积方法，其中施加氢等离子体以制备在纳米晶体金刚石膜上垂直对准的二维纳米结构碳化钨。 其中施加氢等离子体的化学气相沉积方法包括：将其上形成有纳米晶体金刚石膜的衬底设置在室中的阳极上，将表面渗碳的钨阴极在衬底之上和距离衬底处设置，并施加氢 等离子体进入室。

公开(公告)号：US20130302592A1

公开(公告)日：2013-11-14

申请号：US13684291

申请日：2012-11-23

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Wook Seong LEE ,  Hak Joo LEE ,  Young Joon BAIK ,  Jong Keuk PARK

IPC: C23C16/26

CPC classification number: C23C16/26 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/18 ,  Y10S977/842 ,  Y10T428/25

Abstract: A method for growing carbon nanoflakes includes inducing partial etching of graphene layers of carbon nanotubes through an adequate composition of precursor gases, CH4, H2 and Ar, while allowing carbon nanoflakes to grow at the etched site in a plane-like shape. A carbon nanoflake structure is formed by the same method. The method for growing carbon nanoflakes includes: providing a silicon substrate having carbon nanotubes; and growing carbon nanoflakes on the carbon nanotubes through a chemical vapor deposition process using a mixed gas of CH4, H2 and Ar as a precursor. During the chemical vapor deposition process, the mixed gas of CH4, H2 and Ar is in an atmosphere with excess Ar, graphene layers forming the carbon nanotubes are etched partially under the atmosphere with excess Ar, and graphene layers of carbon nanoflakes are grown at the etched site.

Abstract translation: 用于生长碳纳米片的方法包括通过前体气体CH 4，H 2和Ar的适当组成诱导部分蚀刻碳纳米管的石墨烯层，同时允许碳纳米片在蚀刻部位以平面状形成生长。 通过相同的方法形成碳纳米薄层结构。 生长碳纳米片的方法包括：提供具有碳纳米管的硅衬底; 并通过使用CH 4，H 2和Ar的混合气体作为前体的化学气相沉积方法在碳纳米管上生长碳纳米片。 在化学气相沉积过程中，CH4，H2和Ar的混合气体处于具有多余Ar的气氛中，形成碳纳米管的石墨烯层部分地在大气中被多余的Ar蚀刻，碳纳米片的石墨烯层在 蚀刻的地点。