公开(公告)号：US20130260157A1

公开(公告)日：2013-10-03

申请号：US13799419

申请日：2013-03-13

Applicant: Korea Institute Of Science And Technology

Inventor： Wook Seong LEE ,  Hak Joo LEE ,  Young Joon BAIK ,  Jong Keuk PARK

IPC: C23C16/27

CPC classification number: C23C16/27 ,  C23C16/02 ,  C23C16/0254 ,  C23C16/271 ,  C23C16/272

Abstract: A uniform nanocrystalline diamond thin film with minimized voids is formed on a silicon oxide-coated substrate and a method for fabricating same are disclosed. The nanocrystalline diamond thin film is formed by performing hydrogen plasma treatment, hydrocarbon plasma treatment or hydrocarbon thermal treatment on the substrate surface to maximize electrostatic attraction between the substrate surface and nanodiamond particles during the following ultrasonic seeding such that the nanodiamond particles are uniformly distributed and bound on the silicon oxide on the substrate.

Abstract translation: 在氧化硅涂覆的基板上形成具有最小空隙的均匀的纳米晶金刚石薄膜，并且公开了其制造方法。 通过在衬底表面上进行氢等离子体处理，烃等离子体处理或碳氢化合物热处理来形成纳米晶体金刚石薄膜，以在随后的超声波接种期间使衬底表面和纳米金刚石颗粒之间的静电吸引最大化，使得纳米金刚石颗粒均匀分布和结合 在基板上的氧化硅上。

公开(公告)号：US20130273395A1

公开(公告)日：2013-10-17

申请号：US13746185

申请日：2013-01-21

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Wook Seong LEE ,  Hak Joo LEE ,  Young Joon BAIK ,  Jong Keuk PARK

IPC: C23C16/32

CPC classification number: C23C16/32 ,  C23C16/4488

Abstract: 2-dimensional nanostructured tungsten carbide which is obtained by control of the alignment of nanostructure during growth of tungsten carbide through control of the degree of supersaturation and a method for fabricating same are disclosed. The method for fabricating 2-dimensional nanostructured tungsten carbide employs a chemical vapor deposition process wherein a hydrogen plasma is applied to prepare 2-dimensional nanostructured tungsten carbide vertically aligned on a nanocrystalline diamond film. The chemical vapor deposition process wherein the hydrogen plasma is applied includes: disposing a substrate with the nanocrystalline diamond film formed thereon on an anode in a chamber, disposing a surface-carburized tungsten cathode above and at a distance from the substrate, and applying the hydrogen plasma into the chamber.

Abstract translation: 公开了通过控制碳酸钨生长期间纳米结构的取向控制而获得的二维纳米结构碳化钨，其过饱和度及其制造方法。 用于制造二维纳米结构碳化钨的方法采用化学气相沉积方法，其中施加氢等离子体以制备在纳米晶体金刚石膜上垂直对准的二维纳米结构碳化钨。 其中施加氢等离子体的化学气相沉积方法包括：将其上形成有纳米晶体金刚石膜的衬底设置在室中的阳极上，将表面渗碳的钨阴极在衬底之上和距离衬底处设置，并施加氢 等离子体进入室。

公开(公告)号：US20130302592A1

公开(公告)日：2013-11-14

申请号：US13684291

申请日：2012-11-23

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Wook Seong LEE ,  Hak Joo LEE ,  Young Joon BAIK ,  Jong Keuk PARK

IPC: C23C16/26

CPC classification number: C23C16/26 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/18 ,  Y10S977/842 ,  Y10T428/25

Abstract: A method for growing carbon nanoflakes includes inducing partial etching of graphene layers of carbon nanotubes through an adequate composition of precursor gases, CH4, H2 and Ar, while allowing carbon nanoflakes to grow at the etched site in a plane-like shape. A carbon nanoflake structure is formed by the same method. The method for growing carbon nanoflakes includes: providing a silicon substrate having carbon nanotubes; and growing carbon nanoflakes on the carbon nanotubes through a chemical vapor deposition process using a mixed gas of CH4, H2 and Ar as a precursor. During the chemical vapor deposition process, the mixed gas of CH4, H2 and Ar is in an atmosphere with excess Ar, graphene layers forming the carbon nanotubes are etched partially under the atmosphere with excess Ar, and graphene layers of carbon nanoflakes are grown at the etched site.

Abstract translation: 用于生长碳纳米片的方法包括通过前体气体CH 4，H 2和Ar的适当组成诱导部分蚀刻碳纳米管的石墨烯层，同时允许碳纳米片在蚀刻部位以平面状形成生长。 通过相同的方法形成碳纳米薄层结构。 生长碳纳米片的方法包括：提供具有碳纳米管的硅衬底; 并通过使用CH 4，H 2和Ar的混合气体作为前体的化学气相沉积方法在碳纳米管上生长碳纳米片。 在化学气相沉积过程中，CH4，H2和Ar的混合气体处于具有多余Ar的气氛中，形成碳纳米管的石墨烯层部分地在大气中被多余的Ar蚀刻，碳纳米片的石墨烯层在 蚀刻的地点。