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11.发明授权
公开(公告)号：US5992212A
公开(公告)日：1999-11-30
申请号：US964852
申请日：1997-11-05
IPC分类号： G01N19/02
CPC分类号： G01N19/02
摘要： An apparatus for determining a coefficient of friction on a surface of objects such as rails. In one embodiment, the apparatus comprises a vertical sensor assembly for determining the coefficient of friction of a top surface of a rail. A different embodiment comprises a lateral sensor assembly for determining a coefficient of friction of a gage face of a rail. The sensor assemblies may include a shoe. The sensor assemblies may include a load cell. Other embodiments include various combinations of lateral sensor assemblies and vertical sensor assemblies. Structure for mounting the assemblies to a vehicle may also be provided.
摘要翻译： 一种用于确定诸如轨道的物体的表面上的摩擦系数的装置。 在一个实施例中，该装置包括用于确定轨道顶表面的摩擦系数的垂直传感器组件。 不同的实施例包括用于确定轨道的表面的摩擦系数的横向传感器组件。 传感器组件可以包括鞋。 传感器组件可以包括测力传感器。 其他实施例包括横向传感器组件和垂直传感器组件的各种组合。 还可以提供用于将组件安装到车辆的结构。
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公开(公告)号：US4155702A
公开(公告)日：1979-05-22
申请号：US856146
申请日：1977-11-30
申请人： Keith A. Miller , Terry R. Schartel
发明人： Keith A. Miller , Terry R. Schartel
摘要： A burner for combusting hydrocarbon fluids which may contain additional components as additives or contaminants and in the form of a gas, liquid or particulate matter, e.g. waste oil wherein the oil is atomized in a nozzle disposed in a housing defining a combustion chamber for receiving an oxidizing fluid, e.g. oxygen, so that atomized oil is mixed with the oxidizing fluid for combustion. Control of the length to diameter (L/D) ratio of the combustion chamber results in lower operating noise levels for the burner during combustion.
摘要翻译： 用于燃烧碳氢化合物流体的燃烧器，其可以含有额外的组分作为添加剂或污染物，并且以气体，液体或颗粒物质的形式，例如， 废油，其中油在设置在限定用于接收氧化流体的燃烧室的壳体中的喷嘴中雾化，例如， 氧气，使雾化油与氧化液混合燃烧。 燃烧室长度与直径（L / D）比的控制导致燃烧器燃烧时的操作噪音水平较低。
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公开(公告)号：US09062379B2
公开(公告)日：2015-06-23
申请号：US13524859
申请日：2012-06-15
CPC分类号： C23C14/564 , H01J37/32651 , H01J37/3405 , H01J37/3441
摘要： Embodiments described herein generally relate to components for a semiconductor processing chamber, a process kit for a semiconductor processing chamber, and a semiconductor processing chamber having a process kit. In one embodiment a lower shield for encircling a sputtering target and a substrate support is provided. The lower shield comprises a cylindrical outer band having a first diameter dimensioned to encircle the sputtering surface of the sputtering target and the substrate support, the cylindrical band comprising a top wall that surrounds a sputtering surface of a sputtering target and a bottom wall that surrounds the substrate support, a support ledge comprising a resting surface and extending radially outward from the cylindrical outer band, a base plate extending radially inward from the bottom wall of the cylindrical band, and a cylindrical inner band coupled with the base plate and partially surrounding a peripheral edge of the substrate support.
摘要翻译： 本文描述的实施例通常涉及用于半导体处理室的部件，用于半导体处理室的处理套件和具有处理套件的半导体处理室。 在一个实施例中，提供了用于环绕溅射靶的底部屏蔽件和衬底支撑件。 下屏蔽包括具有第一直径的圆柱形外带，其尺寸被设计成围绕溅射靶的溅射表面和衬底支撑件，该圆柱形带包括围绕溅射靶的溅射表面的顶壁和围绕溅射靶的底壁 衬底支撑件，包括搁置表面并从圆柱形外带径向向外延伸的支撑凸缘，从圆柱形带的底壁径向向内延伸的底板，以及与基板耦合并部分围绕外围的圆柱形内带 基板支撑的边缘。
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公开(公告)号：US20130334038A1
公开(公告)日：2013-12-19
申请号：US13524859
申请日：2012-06-15
IPC分类号： C23C14/34
CPC分类号： C23C14/564 , H01J37/32651 , H01J37/3405 , H01J37/3441
摘要： Embodiments described herein generally relate to components for a semiconductor processing chamber, a process kit for a semiconductor processing chamber, and a semiconductor processing chamber having a process kit. In one embodiment a lower shield for encircling a sputtering target and a substrate support is provided. The lower shield comprises a cylindrical outer band having a first diameter dimensioned to encircle the sputtering surface of the sputtering target and the substrate support, the cylindrical band comprising a top wall that surrounds a sputtering surface of a sputtering target and a bottom wall that surrounds the substrate support, a support ledge comprising a resting surface and extending radially outward from the cylindrical outer band, a base plate extending radially inward from the bottom wall of the cylindrical band, and a cylindrical inner band coupled with the base plate and partially surrounding a peripheral edge of the substrate support.
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公开(公告)号：US08573932B2
公开(公告)日：2013-11-05
申请号：US12852720
申请日：2010-08-09
IPC分类号： F01D25/10
CPC分类号： F01D5/147 , F01D5/3007 , F02C7/04 , F04D29/324 , F04D29/34 , F04D29/584 , F05D2260/20 , F05D2270/114
摘要： The compressor blade root heating system may be formed from one or more induction heaters formed from one or more induction coils positioned in close proximity to a root of a compressor blade. In one embodiment, the induction heater may be coupled to a static casing component positioned immediately upstream of a first row of compressor blades on a rotor assembly such that the induction heater is stationary during turbine engine operation. The induction heater causes eddy current formation, which heats the row one compressor blades. This heating increases the fracture toughness of the material forming the rotor and compressor blades, thereby increasing the mechanical life cycle.
摘要翻译： 压缩机叶片根部加热系统可以由一个或多个感应加热器形成，该感应加热器由位于压缩机叶片的根部附近的一个或多个感应线圈形成。 在一个实施例中，感应加热器可以耦合到位于转子组件上的第一排压缩机叶片的紧邻上游的静态壳体部件，使得感应加热器在涡轮发动机运转期间是静止的。 感应加热器引起涡流形成，这加热了一排压缩机叶片。 这种加热增加了形成转子和压缩机叶片的材料的断裂韧性，从而增加了机械寿命周期。
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公开(公告)号：US08559159B2
公开(公告)日：2013-10-15
申请号：US13198204
申请日：2011-08-04
IPC分类号： H01T23/00
CPC分类号： H01L21/67109 , H01L21/67103 , H01L21/6831
摘要： An electrostatic chuck and method of use thereof is provided herein. In some embodiments, an electrostatic chuck may include a disk having a first side to support a substrate thereon and a second side, opposing the first side, to provide an interface to selectively couple the disk to a thermal control plate, a first electrode disposed within the disk proximate the first side to electrostatically couple the substrate to the disk and a second electrode disposed within the disk proximate the opposing side of the disk to electrostatically couple the disk to the thermal control plate. In some embodiments, the second electrode may also be configured to heat the disk.
摘要翻译： 本文提供了静电卡盘及其使用方法。 在一些实施例中，静电卡盘可以包括具有支撑其上的基板的第一侧的盘和与第一侧相对的第二侧，以提供用于选择性地将盘耦合到热控制板的界面，第一电极设置在 靠近第一侧的盘，以将衬底静电耦合到盘，以及设置在靠近盘的相对侧的盘内的第二电极，以将盘静电耦合到热控制板。 在一些实施例中，第二电极也可以被配置为加热盘。
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17.发明申请DEPOSITION RING AND ELECTROSTATIC CHUCK FOR PHYSICAL VAPOR DEPOSITION CHAMBER 审中-公开用于物理蒸气沉积室的沉积环和静电吸盘公开(公告)号：US20130112554A1
公开(公告)日：2013-05-09
申请号：US13662380
申请日：2012-10-26
申请人： MUHAMMAD RASHEED , Keith A. Miller , Rongjun Wang
发明人： MUHAMMAD RASHEED , Keith A. Miller , Rongjun Wang
IPC分类号： C23C14/34
CPC分类号： C23C14/50 , C23C14/3407 , C23C14/564 , C23C16/4585 , H01L21/68735
摘要： Embodiments of the invention generally relate to a process kit for a semiconductor processing chamber, and a semiconductor processing chamber having a kit. More specifically, embodiments described herein relate to a process kit including a deposition ring and a pedestal assembly. The components of the process kit work alone, and in combination, to significantly reduce their effects on the electric fields around a substrate during processing.
摘要翻译： 本发明的实施例一般涉及用于半导体处理室的处理套件和具有套件的半导体处理室。 更具体地说，本文描述的实施例涉及包括沉积环和基座组件的处理套件。 处理套件的组件单独工作，并且组合工作，以显着降低其在处理期间对基板周围的电场的影响。
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公开(公告)号：US20120211359A1
公开(公告)日：2012-08-23
申请号：US13457441
申请日：2012-04-26
IPC分类号： C23C14/34
CPC分类号： C23C16/4585 , C23C14/34 , C23C14/50 , C23C14/564 , H01J37/32623 , H01J37/32633 , H01J37/3408 , H01J37/3441
摘要： Embodiments described herein generally relate to components for a semiconductor processing chamber, a process kit for a semiconductor processing chamber, and a semiconductor processing chamber having a process kit. In one embodiment a lower shield for encircling a sputtering target and a substrate support is provided. The lower shield comprises a cylindrical outer band having a first diameter dimensioned to encircle the sputtering surface of the sputtering target and the substrate support, the cylindrical band comprising a top wall that surrounds a sputtering surface of a sputtering target and a bottom wall that surrounds the substrate support, a support ledge comprising a resting surface and extending radially outward from the cylindrical outer band, a base plate extending radially inward from the bottom wall of the cylindrical band, and a cylindrical inner band coupled with the base plate and partially surrounding a peripheral edge of the substrate support.
摘要翻译： 本文描述的实施例通常涉及用于半导体处理室的部件，用于半导体处理室的处理套件和具有处理套件的半导体处理室。 在一个实施例中，提供了用于环绕溅射靶的底部屏蔽件和衬底支撑件。 下屏蔽包括具有第一直径的圆柱形外带，其尺寸被设计成围绕溅射靶的溅射表面和衬底支撑件，该圆柱形带包括围绕溅射靶的溅射表面的顶壁和围绕溅射靶的底壁 衬底支撑件，包括搁置表面并从圆柱形外带径向向外延伸的支撑凸缘，从圆柱形带的底壁径向向内延伸的底板，以及与基板耦合并部分围绕外围的圆柱形内带 基板支撑的边缘。
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19.发明申请公开(公告)号：US20120103257A1
公开(公告)日：2012-05-03
申请号：US13280771
申请日：2011-10-25
申请人： Muhammad Rasheed , Keith A. Miller , Rongjun Wang
发明人： Muhammad Rasheed , Keith A. Miller , Rongjun Wang
IPC分类号： C23C16/458 , C23C16/04 , C23C16/44
CPC分类号： C23C14/50 , C23C14/3407 , C23C14/564 , C23C16/4585 , H01L21/68735
摘要： Embodiments of the invention generally relate to a process kit for a semiconductor processing chamber, and a semiconductor processing chamber having a kit. More specifically, embodiments described herein relate to a process kit including a deposition ring and a pedestal assembly. The components of the process kit work alone, and in combination, to significantly reduce their effects on the electric fields around a substrate during processing.
摘要翻译： 本发明的实施例一般涉及用于半导体处理室的处理套件和具有套件的半导体处理室。 更具体地，本文所述的实施例涉及包括沉积环和基座组件的处理套件。 处理套件的组件单独工作，并且组合工作，以显着降低其在处理期间对基板周围的电场的影响。
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公开(公告)号：US07718045B2
公开(公告)日：2010-05-18
申请号：US11426775
申请日：2006-06-27
IPC分类号： C23C14/34
CPC分类号： H01J37/3405 , H01J37/32623 , H01J2237/0206 , H01J2237/026
摘要： The invention generally provides a ground shield for use in a physical vapor deposition (PVD) chamber. In one embodiment, a ground shield includes a generally cylindrical body comprising an outer wall, an inner upper wall, an inner lower wall having a diameter less than a diameter of the inner upper wall and a reentrant feature coupling the upper and inner lower walls. The reentrant feature advantageously prevents arching between the shield and target, which promotes greater process uniformity and repeatability along with longer chamber component service life.
摘要翻译： 本发明通常提供用于物理气相沉积（PVD）室的接地屏蔽。 在一个实施例中，接地屏蔽包括大致圆柱形的主体，其包括外壁，内上壁，直径小于内上壁的直径的内下壁和连接上下壁的可重入特征。 可折入特征有利于防止护罩和靶之间的拱形，这促进了更大的工艺均匀性和重复性以及更长的腔室部件使用寿命。
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