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32 条记录 (耗时 0.017 秒)

    Ergonomic handle for grooming brush
    13.
    发明授权
    Ergonomic handle for grooming brush 有权
    用于修饰刷的人体工程学手柄

    公开(公告)号：US06213055B1

    公开(公告)日：2001-04-10

    申请号：US09218252

    申请日：1998-12-21

    申请人： Jonathan Willinger ,  Yoon Ho Choi

    发明人： Jonathan Willinger ,  Yoon Ho Choi

    IPC分类号： A01K1300

    CPC分类号： A01K13/002 ,  A46B5/02 ,  A46B2200/1093

    摘要： A brush handle is formed with a continuously arched upper surface portion and a lower surface portion separated into two arched portions by a humped semi-circular ridge. One of the lower arched portions forms a trigger grip for a single finger held in either a forehand or backhand grip. The handle is preferably covered with a high friction material in the form of a contoured rubber or elastomeric sleeve which is stretched over a complimentarily contoured molded plastic handle.

    摘要翻译： 刷柄形成有连续拱形的上表面部分和下表面部分，其由隆起的半圆形脊部分成两个拱形部分。 下部弓形部分之一形成用于保持在正手或反手把手中的单个手指的触发手柄。 手柄优选地以形成轮廓的橡胶或弹性体套筒的形式的高摩擦材料覆盖，该橡胶或弹性体套筒被拉伸在相互成型的成型塑料手柄上。

    Method of detecting character string pattern at high speed using layered shift tables
    15.
    发明授权
    Method of detecting character string pattern at high speed using layered shift tables 有权
    使用分层移位表高速检测字符串模式的方法

    公开(公告)号：US08108387B2

    公开(公告)日：2012-01-31

    申请号：US12443802

    申请日：2008-09-22

    申请人： Yoon Ho Choi ,  Seung Woo Seo

    发明人： Yoon Ho Choi ,  Seung Woo Seo

    IPC分类号： G06F7/00

    CPC分类号： G06F7/02 ,  G06F2207/025

    摘要： A character string pattern matching method for detecting the presence of at least one of N (N is a natural number equal to or greater than 2) patterns in specific text shifts a detection location across text by a maximum shift length using single-byte character-based layered SHIFT tables, thereby increasing a pattern matching speed as compared with the prior art pattern matching algorithms.

    摘要翻译： 用于检测特定文本中N（N是等于或大于2的自然数）的模式中的至少一个的字符串模式匹配方法使用单字节字符 - 基于分层的SHIFT表，从而与现有技术的模式匹配算法相比增加了模式匹配速度。

    Semiconductor laser diode
    16.
    发明授权
    Semiconductor laser diode 有权
    半导体激光二极管

    公开(公告)号：US07912104B2

    公开(公告)日：2011-03-22

    申请号：US12123814

    申请日：2008-05-20

    申请人： Yoon Ho Choi

    发明人： Yoon Ho Choi

    IPC分类号： H01S5/00

    CPC分类号： H01S5/22 ,  H01S5/2004 ,  H01S5/2009 ,  H01S5/3211

    摘要： A semiconductor laser diode capable of improving reliability and mass-productivity is disclosed. The semiconductor laser diode comprises a first clad layer; a first optical guide layer disposed on the first clad layer; an active layer disposed on the first optical guide layer; a second optical guide layer disposed on the active layer; and a second clad layer disposed on the second optical guide layer, having a greater band gap energy than the second optical guide layer, the band gap energy decreasing as being farther from the second optical guide layer.

    摘要翻译： 公开了能提高可靠性和批量生产率的半导体激光二极管。 半导体激光二极管包括第一覆层; 设置在所述第一包层上的第一光导层; 设置在所述第一光导层上的有源层; 设置在有源层上的第二光导层; 以及设置在所述第二光导层上的第二覆盖层，具有比所述第二光导层更大的带隙能量，所述带隙能量随着与所述第二光导层更远离而减小。

    Semiconductor laser diode having graded interlayer
    20.
    发明授权
    Semiconductor laser diode having graded interlayer 失效
    具有分级夹层的半导体激光二极管

    公开(公告)号：US07701992B2

    公开(公告)日：2010-04-20

    申请号：US12061127

    申请日：2008-04-02

    申请人： Yoon Ho Choi

    发明人： Yoon Ho Choi

    IPC分类号： H01S5/20 ,  H01S5/323 ,  H01S5/00

    CPC分类号： H01S5/22 ,  B82Y20/00 ,  H01L33/06 ,  H01S5/2009 ,  H01S5/3215 ,  H01S5/34333

    摘要： A semiconductor laser diode having a graded interlayer is provided. The semiconductor laser diode has the graded interlayer between an active layer composed of InGaN and an electron blocking layer (EBL) composed of AlGaN. The graded interlayer is composed of InxAlyGa1-x-yN(0≦x≦0.2, 0≦y≦0.5) and is formed by grading a composition of group III materials. Accordingly, the active layer and the p-EBL have a reduced difference in rigidities and lattice parameters, and an abrupt gradient of an energy band and generation of a strain can be avoided in an interface between the active layer and the p-EBL. Since a crack can be prevented from being generated along the interface between the active layer and the p-EBL when a cleavage facet is formed, characteristics of the semiconductor laser diode can be improved.

    摘要翻译： 提供具有渐变夹层的半导体激光二极管。 半导体激光二极管在由InGaN构成的有源层和由AlGaN构成的电子阻挡层（EBL）之间具有渐变中间层。 分级夹层由InxAlyGa1-x-yN（0＆nlE; x＆nlE; 0.2,0＆nlE; y＆nlE; 0.5）组成，并通过对III族材料的组成进行分级而形成。 因此，活性层和p-EBL具有减小的刚性和晶格参数的差异，并且可以在活性层和p-EBL之间的界面中避免能带的突变梯度和应变的产生。 由于可以防止在形成裂开面时沿着有源层和p-EBL之间的界面产生裂纹，所以能够提高半导体激光二极管的特性。