公开(公告)号：US09054497B2

公开(公告)日：2015-06-09

申请号：US13624330

申请日：2012-09-21

申请人： The Trustees of Princeton University

发明人： Claire Gmachl ,  YenTing Chiu ,  Yamac Dikmelik ,  Jacob B. Khurgin

IPC分类号： H01S5/00 ,  H01S5/223 ,  H01S5/20 ,  H01S5/34 ,  H01S5/323

CPC分类号： H01S5/2231 ,  H01S5/2004 ,  H01S5/32316 ,  H01S5/3401 ,  H01S5/3402 ,  H01S2301/17 ,  H01S2304/00

摘要： A quantum cascade laser and method of making are disclosed. The quantum cascade laser includes a plurality stages configured in a cascade structure, each stage having a quantum well emission layer and an injection layer, each stage having an upper laser level and a lower laser level. A scattering barrier is located in the quantum well emission layer, the scattering barrier being positioned such that interface roughness (IFR) scattering at the lower laser level is greater than IFR scattering at the upper laser level. The scattering barrier may be located to maximize IFR scattering for the lower laser level and/or minimize IFR scattering for the upper laser level.

摘要翻译： 公开了一种量子级联激光器和制造方法。 量子级联激光器包括以级联结构配置的多个级，每级具有量子阱发射层和注入层，每级具有上激光水平和较低的激光水平。 散射屏障位于量子阱发射层中，散射屏障被定位成使得在较低激光水平下的界面粗糙度（IFR）散射大于上激光水平面处的IFR散射。 可以定位散射屏障以使较低激光水平的IFR散射最大化和/或最小化上层激光水平的IFR散射。

公开(公告)号：US08831062B2

公开(公告)日：2014-09-09

申请号：US13639833

申请日：2011-04-06

申请人： Hans-Ulrich Pfeiffer ,  Andrew Cannon Carter ,  Jörg Troger ,  Norbert Lichtenstein ,  Michael Schwarz ,  Abram Jakubowicz ,  Boris Sverdlov

发明人： Hans-Ulrich Pfeiffer ,  Andrew Cannon Carter ,  Jörg Troger ,  Norbert Lichtenstein ,  Michael Schwarz ,  Abram Jakubowicz ,  Boris Sverdlov

IPC分类号： H01S5/00 ,  H01S5/042 ,  H01S5/22 ,  H01S5/20 ,  H01S5/10 ,  H01S5/16

CPC分类号： H01S5/0425 ,  H01S5/0014 ,  H01S5/1039 ,  H01S5/1053 ,  H01S5/1064 ,  H01S5/16 ,  H01S5/2004 ,  H01S5/22

摘要： A semiconductor laser diode comprises a semiconductor body having an n-region and a p-region laterally spaced apart within the semiconductor body. The laser diode is provided with an active region between the n-region and the p-region having a front end and a back end section, an n-metallization layer located adjacent the n-region and having a first injector for injecting current into the active region, and a p-metallization layer opposite to the n-metallization layer and adjacent the p-region and having a second injector for injecting current into the active region. The thickness and/or width of at least one metallization layer is chosen so as to control the current injection in a part of the active region near at least one end of the active region compared to the current injection in another part of the active region. The width of the at least one metallization layer is larger than a width of the active region. This arrangement results in substantially uniform current distribution near the front end of the active region. Advantageously, this uniform current density significantly improves the reliability of the laser diode.

摘要翻译： 半导体激光二极管包括在半导体本体内具有n区和横向间隔开的p区的半导体本体。 激光二极管在n区域和p区域之间设置有有源区域，其具有前端部分和后端部分，邻近n区域的n-金属化层，并且具有用于将电流注入到第一注入器中的第一注入器 有源区和与n金属化层相对并且邻近p区的p金属化层，并且具有用于将电流注入到有源区中的第二注入器。 选择至少一个金属化层的厚度和/或宽度，以便与有源区域的另一部分中的电流注入相比，控制有源区域的至少一端附近的有源区域的一部分中的电流注入。 至少一个金属化层的宽度大于有源区的宽度。 这种布置导致在有源区域的前端附近的电流分布基本均匀。 有利地，这种均匀的电流密度显着提高了激光二极管的可靠性。

公开(公告)号：US08679876B2

公开(公告)日：2014-03-25

申请号：US12826305

申请日：2010-06-29

申请人： Arpan Chakraborty ,  Monica Hansen ,  Steven Denbaars ,  Shuji Nakamura ,  George Brandes

发明人： Arpan Chakraborty ,  Monica Hansen ,  Steven Denbaars ,  Shuji Nakamura ,  George Brandes

IPC分类号： H01L21/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/2004 ,  H01S5/3406

摘要： A laser diode and method for fabricating same, wherein the laser diode generally comprises an InGaN compliance layer on a GaN n-type contact layer and an AlGaN/GaN n-type strained super lattice (SLS) on the compliance layer. An n-type GaN separate confinement heterostructure (SCH) is on said n-type SLS and an InGaN multiple quantum well (MQW) active region is on the n-type SCH. A GaN p-type SCH on the MQW active region, an AlGaN/GaN p-type SLS is on the p-type SCH, and a p-type GaN contact layer is on the p-type SLS. The compliance layer has an In percentage that reduces strain between the n-type contact layer and the n-type SLS compared to a laser diode without the compliance layer. Accordingly, the n-type SLS can be grown with an increased Al percentage to increase the index of refraction. This along with other features allows for reduced threshold current and voltage operation.

摘要翻译： 一种激光二极管及其制造方法，其中激光二极管通常包括在GaN n型接触层上的InGaN柔性层和在柔性层上的AlGaN / GaN n型应变超晶格（SLS）。 n型GaN分离限制异质结构（SCH）在所述n型SLS上，并且InGaN多量子阱（MQW）有源区在n型SCH上。 在MQW有源区上的GaN p型SCH，AlGaN / GaN p型SLS在p型SCH上，p型GaN接触层在p型SLS上。 顺应层具有与不具有柔顺层的激光二极管相比，n型接触层和n型SLS之间的应变的In百分比。 因此，n型SLS可以以增加的Al百分数生长以增加折射率。 这与其他功能一起允许降低阈值电流和电压操作。

公开(公告)号：US08660159B2

公开(公告)日：2014-02-25

申请号：US12533840

申请日：2009-07-31

申请人： Kanji Takeuchi ,  Kenji Sahara

发明人： Kanji Takeuchi ,  Kenji Sahara

IPC分类号： H01S5/00

CPC分类号： H01S5/2231 ,  H01S5/2004 ,  H01S2301/18

摘要： A laser diode capable of reducing a radiating angle θ⊥ in the vertical direction, an optical pickup device, an optical disk apparatus, and optical communications equipment, all equipped with the laser diode which increases optical coupling efficiency. It has a first cladding layer of the first conductive type formed on a substrate, with an active layer on top of the first cladding layer and a second cladding layer of the second conductive type on top of the active layer. In at least the first or second cladding layer, it is formed of at least one optical guide layer having a higher refractive index than the first or second cladding layer and operating to expand a beam waist in the waveguide. This operation contributes to widening a region in which to shut up light, enabling a radiating angle θ⊥ in the vertical direction to be reduced.

摘要翻译： 能够减小垂直方向上的辐射角度θ⊥的激光二极管，光学拾取装置，光盘装置和光通信设备，其全都配备有提高光耦合效率的激光二极管。 它具有形成在基板上的第一导电类型的第一包覆层，在第一覆层的顶部具有有源层，在有源层顶部具有第二导电类型的第二覆层。 在至少第一或第二包覆层中，由至少一个具有比第一或第二覆层更高的折射率的光导层形成，并且在波导中扩展束腰。 该操作有助于加宽闭合光的区域，从而能够减小垂直方向的照射角度θ⊥。

公开(公告)号：US08625648B2

公开(公告)日：2014-01-07

申请号：US13393167

申请日：2010-08-19

申请人： Marc Schillgalies ,  Teresa Lermer ,  Christoph Eichler

发明人： Marc Schillgalies ,  Teresa Lermer ,  Christoph Eichler

IPC分类号： H01S5/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0655 ,  H01S5/2004 ,  H01S5/2009 ,  H01S5/2027 ,  H01S5/22 ,  H01S2301/18

摘要： An edge emitting semiconductor laser (1) is specified, comprising an n-side waveguide region (21) and a p-side waveguide region (22); an active zone (20) for generating electromagnetic radiation; at least one reflection layer (24) in the n-side waveguide region (21), wherein the active zone (20) is arranged between the two waveguide regions (21, 22), the thickness of the n-side waveguide region (21) is greater than that of the p-side waveguide region (22), the refractive index of the reflection layer (24) is less than the refractive index of the n-side waveguide region (21) adjoining the reflection layer (24).

摘要翻译： 指定边缘发射半导体激光器（1），其包括n侧波导区域（21）和p侧波导区域（22）; 用于产生电磁辐射的活动区域（20）; 所述n侧波导区域（21）中的至少一个反射层（24），其中所述有源区域（20）布置在所述两个波导区域（21,22）之间，所述n侧波导区域（21）的厚度 ）大于p侧波导区域（22）的折射率，反射层（24）的折射率小于与反射层（24）相邻的n侧波导区域（21）的折射率。