公开(公告)号：US20220384218A1

公开(公告)日：2022-12-01

申请号：US17885362

申请日：2022-08-10

Applicant: KIOXIA CORPORATION

Inventor： Mana TANABE ,  Kosuke TAKAI ,  Kenji MASUI ,  Kaori UMEZAWA

IPC: H01L21/67 ,  B08B7/00 ,  H01L21/02

Abstract: A substrate processing method includes a process of cooling a substrate to below a freezing point of a processing liquid using a cooling fluid brought into contact with the substrate opposite. While the substrate is cooled to below the freezing point of the processing liquid, a droplet of processing liquid is dispensed onto a surface of the substrate at a specified location of a foreign substance. The droplet then forms a frozen droplet portion at the specified location. The frozen droplet portion is then thawed.

公开(公告)号：US20220082933A1

公开(公告)日：2022-03-17

申请号：US17349750

申请日：2021-06-16

Applicant: Kioxia Corporation

Inventor： Kaori UMEZAWA ,  Kosuke TAKAI ,  Shoji MIMOTOGI ,  Tsubasa NAITO

IPC: G03F1/76 ,  H01L21/027

Abstract: In one embodiment, a method of manufacturing an original plate includes forming a first film on a first substrate, wherein an etching rate of the first film by a chemical solution including hydrofluoric acid is larger than an etching rate of the first substrate by the chemical solution. The method further includes forming a second film on the first film, wherein an etching rate of the second film by the chemical solution is smaller than the etching rate of the first film by the chemical solution. The method further includes etching the first substrate by the chemical solution using the first film and the second film as masks to form, on the first substrate, a first region having a first height, a second region having a second height different from the first height, and a first slope located between the first region and the second region.