公开(公告)号：US20230307261A1

公开(公告)日：2023-09-28

申请号：US17930856

申请日：2022-09-09

Applicant: Kioxia Corporation

Inventor： Kenji MASUI ,  Masatoshi TERAYAMA

IPC: H01L21/67 ,  H01L21/687

CPC classification number: H01L21/67051 ,  H01L21/67109 ,  H01L21/68764

Abstract: A substrate processing apparatus according to one embodiment includes a substrate holding part having a stage holding the substrate, a freezing solution supply part supplying the freezing solution to the substrate, a cooling part cooling the freezing solution to form a freezing film, and a thawing solution supply part having a nozzle extending in a first direction including a central part of the stage in a plan view, wherein an end and an other end opposite to the end of the nozzle in the first direction are located on an outer periphery outside of the central part, and the thawing solution supply part supplies a thawing solution having at least one of a different supply volume, temperature, or supply timing between the central part and the outer periphery to the substrate to thaw the freezing film.

公开(公告)号：US20220384218A1

公开(公告)日：2022-12-01

申请号：US17885362

申请日：2022-08-10

Applicant: KIOXIA CORPORATION

Inventor： Mana TANABE ,  Kosuke TAKAI ,  Kenji MASUI ,  Kaori UMEZAWA

IPC: H01L21/67 ,  B08B7/00 ,  H01L21/02

Abstract: A substrate processing method includes a process of cooling a substrate to below a freezing point of a processing liquid using a cooling fluid brought into contact with the substrate opposite. While the substrate is cooled to below the freezing point of the processing liquid, a droplet of processing liquid is dispensed onto a surface of the substrate at a specified location of a foreign substance. The droplet then forms a frozen droplet portion at the specified location. The frozen droplet portion is then thawed.