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公开(公告)号：US20210341830A1
公开(公告)日：2021-11-04
申请号：US17197978
申请日：2021-03-10
Applicant: Kioxia Corporation
Inventor： Yukio OPPATA , Shoji MIMOTOGI
Abstract: A pattern forming method of an embodiment includes: obtaining a height difference of a transfer surface of a substrate to which a pattern is to be transferred; measuring a focus shift tracking amount with respect to the height difference of an exposure apparatus that performs pattern transfer; calculating a difference between the height difference and the tracking amount; forming a photomask provided with an optical path difference corresponding to the difference; and transferring a pattern to the substrate using the photomask.
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公开(公告)号：US20240427229A1
公开(公告)日：2024-12-26
申请号：US18734773
申请日：2024-06-05
Applicant: Kioxia Corporation
Inventor： Katsuyoshi KODERA , Yukio OPPATA , Shoji MIMOTOGI
Abstract: A method of manufacturing a photomask comprises forming a mask film on a surface of a substrate, and forming, with the mask film, a first mask pattern in a first region of the substrate and a second mask pattern in a second region of the substrate. A coverage ratio of the first mask pattern is different from a coverage ratio of the second mask pattern. A light transmittance rate of light through the substrate in the first region and the first mask pattern is different from a light transmittance rate of the light through the substrate in the second region and the second mask pattern.
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3.发明公开公开(公告)号：US20240105420A1
公开(公告)日：2024-03-28
申请号：US18332203
申请日：2023-06-09
Applicant: Kioxia Corporation
Inventor： Katsuyoshi KODERA , Shoji MIMOTOGI , Shunko MAGOSHI , Ryuji OGAWA , Taiki KIMURA
IPC: H01J37/317
CPC classification number: H01J37/3174 , H01J2237/31762 , H01J2237/31776
Abstract: A data generation apparatus of one embodiment includes a processing unit, an evaluation unit, and a conversion unit. The processing unit designs, through optical proximity correction based on a target pattern formed on a substrate using the photomask, a mask pattern corresponding to the target pattern and including a plurality of rectangular regions. The evaluation unit evaluates the mask pattern using a cost function having, as a parameter, a jog length indicating a length of each of the rectangular regions included in the mask pattern in a first direction. The conversion unit converts mask pattern data indicating the mask pattern with an evaluation that meets a predetermined condition to drawing data corresponding to a variable shaped beam drawing process.
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公开(公告)号：US20220082933A1
公开(公告)日：2022-03-17
申请号：US17349750
申请日：2021-06-16
Applicant: Kioxia Corporation
Inventor： Kaori UMEZAWA , Kosuke TAKAI , Shoji MIMOTOGI , Tsubasa NAITO
IPC: G03F1/76 , H01L21/027
Abstract: In one embodiment, a method of manufacturing an original plate includes forming a first film on a first substrate, wherein an etching rate of the first film by a chemical solution including hydrofluoric acid is larger than an etching rate of the first substrate by the chemical solution. The method further includes forming a second film on the first film, wherein an etching rate of the second film by the chemical solution is smaller than the etching rate of the first film by the chemical solution. The method further includes etching the first substrate by the chemical solution using the first film and the second film as masks to form, on the first substrate, a first region having a first height, a second region having a second height different from the first height, and a first slope located between the first region and the second region.
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