公开(公告)号：US5843600A

公开(公告)日：1998-12-01

申请号：US901168

申请日：1997-07-28

Applicant: Tsu-Yu Chu ,  Jui-Yu Chang ,  Kun-Pi Cheng

Inventor： Tsu-Yu Chu ,  Jui-Yu Chang ,  Kun-Pi Cheng

IPC: G03F1/00 ,  G03F7/00 ,  G03F9/00

CPC classification number: G03F9/70 ,  G03F1/42 ,  G03F7/0035 ,  Y10S148/102 ,  Y10S438/975

Abstract: A mask, which does not require additional reticles, and a method of using the mask for recovering alignment marks in a wafer after an inter-level dielectric layer has been planarized and a second layer of metal has been deposited on the planarized inter-level dielectric layer are described. An alignment mark protection pattern and a clearout window pattern are sub-divided so they can be formed from a first and a second mask element. These mask elements can be formed in the peripheral region of the reticle used to pattern the device region of the wafer. The mask elements are used to expose the alignment mark protection pattern in a first layer of photoresist and the clearout window pattern in a second layer of photoresist.

Abstract translation: 不需要额外的掩模版的掩模，以及在层间电介质层已被平坦化之后使用掩模来恢复晶片中的对准标记的方法，并且第二层金属已沉积在平坦化的层间电介质上 描述层。 对准标记保护图案和清晰窗口图案被细分，使得它们可以由第一和第二掩模元件形成。 这些掩模元件可以形成在用于对晶片的器件区域进行图案化的掩模版的周边区域中。 掩模元件用于在光致抗蚀剂的第一层中曝光对准标记保护图案，并在第二层光致抗蚀剂中露出清漆窗口图案。