Preparation Method of Polyamide Thin Film Composite Reverse Osmosis Membrane and Polyamide Thin Film Composite Reverse Osmosis Membrane Prepared Therefrom
    12.
    发明申请
    Preparation Method of Polyamide Thin Film Composite Reverse Osmosis Membrane and Polyamide Thin Film Composite Reverse Osmosis Membrane Prepared Therefrom 有权
    聚酰胺薄膜复合反渗透膜和聚酰胺薄膜复合反渗透膜的制备方法

    公开(公告)号:US20080234462A1

    公开(公告)日:2008-09-25

    申请号:US10586520

    申请日:2005-12-26

    IPC分类号: C08G73/00 B05D3/10

    摘要: A preparation method of a polyamide thin film composite reverse osmosis membrane and a polyamide thin film composite reverse osmosis membrane prepared using the preparation method are provided. The preparation method of a polyamide thin film composite reverse osmosis membrane using interfacial polymerization of an amine aqueous solution and amine-reactive compound includes the steps of (a) forming an active layer through interfacial polymerization by contacting a surface of a porous support with an amine aqueous solution containing a polyfunctional aromatic amine monomer and an organic solution containing polyfunctional acyl halide monomer as an amine-reactive compound, and (b) performing post-treatment preceded by the forming of the active layer by contacting the active layer with an aqueous solution containing 0.1 to 100 wt % of polyfunctional tertiary alcohol amine. The polyamide thin film composite reverse osmosis membrane prepared by using the polyfunctional tertiary alcohol amine as a post-treatment compound has improved water permeability and salt rejection compared to a case of using various post-treatment agents or methods.

    摘要翻译: 提供了使用该制备方法制备的聚酰胺薄膜复合反渗透膜和聚酰胺薄膜复合反渗透膜的制备方法。 使用胺水溶液和胺反应性化合物的界面聚合的聚酰胺薄膜复合反渗透膜的制备方法包括以下步骤:(a)通过界面聚合形成活性层,通过使多孔载体的表面与胺 含有多官能芳族胺单体的水溶液和含有多官能酰卤单体作为胺反应性化合物的有机溶液,和(b)在活性层形成之前进行后处理,所述活性层通过使活性层与含有 0.1〜100重量%的多官能叔胺胺。 通过使用多官能叔醇胺作为后处理化合物制备的聚酰胺薄膜复合反渗透膜与使用各种后处理剂或方法的情况相比,具有改善的透水性和耐盐析性。

    ARRAY SUBSTRATE FOR LIQUID CRYSTAL DISPLAY DEVICE
    14.
    发明申请
    ARRAY SUBSTRATE FOR LIQUID CRYSTAL DISPLAY DEVICE 审中-公开
    用于液晶显示装置的阵列基板

    公开(公告)号:US20110051027A1

    公开(公告)日:2011-03-03

    申请号:US12871139

    申请日:2010-08-30

    IPC分类号: G02F1/136

    CPC分类号: G02F1/136213

    摘要: An array substrate for a liquid crystal display device includes a plurality of gate lines on a substrate; a plurality of data lines crossing the plurality of gate lines to define a plurality of pixel regions; a thin film transistor connected to one of the plurality of gate lines and one of the plurality of data lines and disposed in one pixel region of the plurality of pixel regions; first and second shield patterns respectively extending from a previous gate line of the plurality of gate lines to the one pixel region, the first shield pattern disposed at one side of the one pixel region, and the second shield pattern disposed at the other side of the one pixel region; and a pixel electrode in the one pixel region and over the thin film transistor, the pixel electrode overlapping the first and second shield patterns and the previous gate line.

    摘要翻译: 液晶显示装置用阵列基板包括:基板上的多条栅极线; 多条数据线与所述多条栅极线交叉以限定多个像素区域; 连接到所述多条栅极线中的一条和所述多条数据线之一并且设置在所述多个像素区域的一个像素区域中的薄膜晶体管; 第一屏蔽图案和第二屏蔽图案分别从多个栅极线的先前栅极线延伸到一个像素区域,第一屏蔽图案设置在一个像素区域的一侧,第二屏蔽图案设置在第二屏蔽图案的另一侧 一个像素区域; 和一个像素区域中的像素电极,并且在薄膜晶体管上方,像素电极与第一和第二屏蔽图案和先前的栅极线重叠。

    Method of manufacturing electronic device capable of controlling threshold voltage and ion implanter controller and system that perform the method
    15.
    发明授权
    Method of manufacturing electronic device capable of controlling threshold voltage and ion implanter controller and system that perform the method 有权
    制造能够控制阈值电压的电子装置的方法和执行该方法的离子注入机控制器和系统

    公开(公告)号:US07537940B2

    公开(公告)日:2009-05-26

    申请号:US11053651

    申请日:2005-02-07

    IPC分类号: H01L21/66

    摘要: A method of manufacturing an electronic device, which can obtain sufficient manufacturing margins and reduce a defect rate by compensating for a threshold voltage variation caused by the variation of a critical dimension (CD) of a gate electrode. An ion implanter controller and an ion implantation system perform the method. In the method, an ion implantation recipe for forming a junction contact plug of a transistor formed on the wafer is adjusted based on the measured CD. Then, ions are implanted into the wafer by using the adjusted ion implantation recipe. All defects that may occur in the transistor during previous manufacturing steps can be repaired after the transistor is formed, thus enhancing manufacturing margins.

    摘要翻译: 一种制造电子器件的方法,其可以通过补偿由栅电极的临界尺寸(CD)的变化引起的阈值电压变化来获得足够的制造裕度并降低缺陷率。 离子注入机控制器和离子注入系统执行该方法。 在该方法中,基于所测量的CD调节用于形成晶片上形成的晶体管的接点插塞的离子注入配方。 然后,通过使用调整的离子注入配方将离子注入晶片。 在以前的制造步骤中可能发生在晶体管中的所有缺陷可以在晶体管形成之后被修复,从而提高制造裕度。

    Method for manufacturing semiconductor device
    17.
    发明授权
    Method for manufacturing semiconductor device 失效
    制造半导体器件的方法

    公开(公告)号:US5740065A

    公开(公告)日:1998-04-14

    申请号:US449853

    申请日:1995-05-24

    CPC分类号: G03F7/70633 G03F9/7046

    摘要: A method for manufacturing a semiconductor device comprises the steps of extracting an optimal working condition by accumulatively averaging accumulated working conditions of lots previously performed in an expectation process to be currently performed in the manufacturing equipment, extracting a correction condition by extracting information for an alignment state of a lower layer performed by the expectation process, and setting the working condition by adding the correction condition to the optimal working condition.

    摘要翻译: 一种制造半导体器件的方法,包括以下步骤:通过对在制造设备中当前执行的预期处理中先前执行的批量的累积工作条件累积平均来提取最佳工作条件,通过提取校准状态的信息来提取校正条件 通过预期处理执行的下层,并且通过将校正条件添加到最佳工作条件来设定工作条件。