公开(公告)号：US11195862B2

公开(公告)日：2021-12-07

申请号：US16517263

申请日：2019-07-19

Applicant: LG Display Co., Ltd.

Inventor： Jaeman Jang ,  InTak Cho

IPC: H01L27/12 ,  H01L51/05 ,  H01L29/51 ,  H01L29/49

Abstract: A thin film transistor includes an active layer on a substrate, a gate electrode configured to be spaced from the active layer and partially overlapped with the active layer, and a gate insulating layer, at least a part of the gate insulating layer being disposed between the active layer and the gate electrode, wherein the gate insulating layer includes a first gate insulating layer between the active layer and the gate electrode, and a second gate insulating layer configured to have a dielectric constant (k) which is different from a dielectric constant of the first gate insulating layer, and disposed in a same layer as the first gate insulating layer, and wherein at least a part of the second gate insulating layer is disposed between the active layer and the gate electrode.

公开(公告)号：US11094793B2

公开(公告)日：2021-08-17

申请号：US16538587

申请日：2019-08-12

Applicant: LG Display Co., Ltd.

Inventor： SeHee Park ,  InTak Cho ,  DaeHwan Kim ,  JuHeyuck Baeck ,  Jiyong Noh

IPC: H01L29/49 ,  H01L29/786 ,  H01L27/12 ,  G09G3/3266 ,  G11C19/28 ,  G09G3/3225 ,  G09G3/3233

Abstract: A thin film transistor substrate can include a first buffer layer disposed on a base substrate; a second buffer layer disposed on the first buffer layer; a semiconductor layer disposed on the second buffer layer; and a gate electrode spaced apart from the semiconductor layer, at least a part of the gate electrode overlapping with the semiconductor layer, in which a surface oxygen concentration of the first buffer layer is higher than a surface oxygen concentration of the second buffer layer.

公开(公告)号：US11069814B2

公开(公告)日：2021-07-20

申请号：US16575077

申请日：2019-09-18

Applicant: LG DISPLAY CO., LTD.

Inventor： SangYun Sung ,  SeHee Park ,  Jiyong Noh ,  InTak Cho ,  PilSang Yun

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/423 ,  H01L29/49

Abstract: An electronic device can include a panel; a driver circuit configured to drive the panel; and a transistor disposed in the panel, the transistor including: a gate electrode disposed on a substrate, a first insulating film disposed on the gate electrode, an active layer disposed on the first insulating film, the active layer including: a first portion of the active layer overlapping with an upper surface of the gate electrode, a second portion of the active layer extending from the first portion, being disposed along a side surface of the gate electrode and including a channel area, and a third portion of the active layer extending from the second portion of the active layer, the third portion of the active layer being disposed on a portion of the first insulating film that does not overlap with the gate electrode, a second insulating film disposed on the active layer, a first electrode disposed on the second insulating film, the first electrode being electrically connected to the first portion of the active layer, and a second electrode disposed on the second insulating film, the second electrode being electrically connected to the third portion of the active layer.