公开(公告)号：US20230134901A1

公开(公告)日：2023-05-04

申请号：US17969499

申请日：2022-10-19

Applicant: LG Display Co., Ltd.

Inventor： Younghyun Ko ,  Jaeman Jang ,  SeungChan Choi ,  Min-Gu Kang ,  Sungju Choi

IPC: H01L27/32

Abstract: A thin film transistor and a display device comprising the same is disclosed. The thin film transistor comprises an active layer on a substrate, and a first gate electrode at least partially overlapped with the active layer, wherein the active layer includes a channel portion, a first connection portion that is in contact with one side of the channel portion, and a second connection portion that is in contact with the other side of the channel portion, and an effective gate voltage applied to a first area of the channel portion, which is in contact with the first connection portion, is greater than that applied to a second area of the channel portion, which is in contact with the second connection portion.

公开(公告)号：US11588027B2

公开(公告)日：2023-02-21

申请号：US17131284

申请日：2020-12-22

Applicant: LG Display Co., Ltd.

Inventor： InTak Cho ,  Jiyong Noh ,  Jaeman Jang ,  PilSang Yun ,  Jeyong Jeon

IPC: G09G3/32 ,  H01L29/40 ,  H01L27/12 ,  H01L29/786 ,  H01L21/765 ,  H01L29/66 ,  H01L21/02

Abstract: A thin film transistor, a display panel comprising the same and a display apparatus are discussed. The thin film transistor comprises a buffer layer embodied on a substrate, a semiconductor layer embodied on the buffer layer, including a channel area, a first conductor portion and a second conductor portion, a gate insulating film embodied on the semiconductor layer, a gate electrode embodied on the gate insulating film, and an auxiliary electrode overlapped with the second conductor portion, wherein the first conductor portion is extended from one side of the channel area, and becomes a source area, and the second conductor portion is extended from the other side of the channel area, and becomes a drain area.

公开(公告)号：US11495692B2

公开(公告)日：2022-11-08

申请号：US17121248

申请日：2020-12-14

Applicant: LG Display Co., Ltd.

Inventor： Jaeman Jang ,  PilSang Yun ,  Jiyong Noh ,  InTak Cho

IPC: H01L29/786 ,  H01L29/66

Abstract: Disclosed are a thin film transistor, a display apparatus comprising the thin film transistor, and a method for manufacturing the thin film transistor. The thin film transistor comprises an active layer, and a gate electrode spaced apart from the active layer and configured to have at least a portion overlapped with the active layer, wherein the active layer includes a silicon semiconductor layer, and an oxide semiconductor layer which contacts the silicon semiconductor layer, wherein at least a portion of the silicon semiconductor layer and at least a portion of the oxide semiconductor layer are overlapped with the gate electrode.