公开(公告)号：US20220173130A1

公开(公告)日：2022-06-02

申请号：US17671452

申请日：2022-02-14

Applicant: LG Display Co. Ltd.

Inventor： Kwanghwan JI ,  HongRak CHOI ,  Jeyong JEON ,  Jaeyoon PARK

IPC: H01L27/12 ,  H01L29/417 ,  H01L29/45 ,  H01L29/66 ,  H01L49/02 ,  H01L29/786

Abstract: A panel comprises a substrate; a transistor disposed on the substrate and including: a source electrode, a drain electrode, a gate electrode, a gate insulation layer, an active layer, an auxiliary source electrode configured to electrically connect one end of the active layer to the source electrode, and an auxiliary drain electrode configured to electrically connect an other end of the active layer to the drain electrode; and a capacitor disposed on the substrate and including a first plate and a second plate. The first plate of the capacitor is made of a same material as the auxiliary source electrode and the auxiliary drain electrode.

公开(公告)号：US20180190798A1

公开(公告)日：2018-07-05

申请号：US15858065

申请日：2017-12-29

Applicant: LG Display Co., Ltd.

Inventor： Jaeyoon PARK ,  SeHee PARK ,  HyungJoon KOO ,  Kwanghwan JI ,  PilSang YUN

IPC: H01L29/66 ,  H01L29/786 ,  H01L27/12 ,  H01L29/04 ,  H01L21/02

Abstract: Disclosed are an oxide thin film transistor (TFT), a method of manufacturing the same, a display panel including the oxide TFT, and a display device including the display panel, in which a crystalline oxide semiconductor is provided on a metal insulation layer including metal through a metal organic chemical vapor deposition (MOCVD) process. The oxide TFT includes a metal insulation layer including metal, a crystalline oxide semiconductor adjacent to the metal insulation layer, a gate including metal, a gate insulation layer between the crystalline oxide semiconductor and the gate, a first conductor in one end of the crystalline oxide semiconductor, and a second conductor in another end of the crystalline oxide semiconductor.