公开(公告)号：US20210013290A1

公开(公告)日：2021-01-14

申请号：US16923444

申请日：2020-07-08

Applicant: LG Display Co., Ltd.

Inventor： SeHee PARK ,  InTak CHO ,  PilSang YUN

IPC: H01L27/32 ,  G09G3/3291

Abstract: Provided is an electronic device. The electronic device includes at least one first transistor to which a data voltage is applied. The first transistor includes a first conductive layer disposed on a substrate and a first active layer, which is disposed on the first conductive layer, has one end and the other end which are made conductive, and includes a first channel region disposed between the one end and the other end. A second conductive layer overlapping the first conductive layer with a first insulating layer interposed between the second conductive layer and the first conductive layer is included in a storage capacitor in a panel, and the storage capacitor is disposed under the first channel region of the first active layer. In this way, an ultra-high definition panel is fabricated.

公开(公告)号：US20200212077A1

公开(公告)日：2020-07-02

申请号：US16525482

申请日：2019-07-29

Applicant: LG Display Co., Ltd.

Inventor： Jaeman JANG ,  SeHee PARK ,  DaeHwan KIM ,  PilSang YUN

IPC: H01L27/12 ,  H01L27/32

Abstract: A display apparatus includes a substrate; a pixel driving circuit on the substrate; and a display unit connected with the pixel driving circuit, wherein the pixel driving circuit includes a first thin film transistor and a second thin film transistor, wherein the first thin film transistor includes, a first gate electrode on the substrate, a first active layer spaced apart from the first gate electrode and overlapping at least a part of the first gate electrode, a first source electrode connected with the first active layer; and a first drain electrode spaced apart from the first source electrode and connected with the first active layer, and wherein the second thin film transistor includes, a second active layer on the substrate, and a second gate electrode spaced apart from the second active layer and partially overlapping at least a part of the second active layer, wherein the first gate electrode is disposed between the substrate and the first active layer, the second active layer is disposed between the substrate and the second gate electrode, and the first gate electrode and the second gate electrode are disposed at an opposite side with respect to the second active layer.

公开(公告)号：US20180190798A1

公开(公告)日：2018-07-05

申请号：US15858065

申请日：2017-12-29

Applicant: LG Display Co., Ltd.

Inventor： Jaeyoon PARK ,  SeHee PARK ,  HyungJoon KOO ,  Kwanghwan JI ,  PilSang YUN

IPC: H01L29/66 ,  H01L29/786 ,  H01L27/12 ,  H01L29/04 ,  H01L21/02

Abstract: Disclosed are an oxide thin film transistor (TFT), a method of manufacturing the same, a display panel including the oxide TFT, and a display device including the display panel, in which a crystalline oxide semiconductor is provided on a metal insulation layer including metal through a metal organic chemical vapor deposition (MOCVD) process. The oxide TFT includes a metal insulation layer including metal, a crystalline oxide semiconductor adjacent to the metal insulation layer, a gate including metal, a gate insulation layer between the crystalline oxide semiconductor and the gate, a first conductor in one end of the crystalline oxide semiconductor, and a second conductor in another end of the crystalline oxide semiconductor.

公开(公告)号：US20210305341A1

公开(公告)日：2021-09-30

申请号：US17344903

申请日：2021-06-10

Applicant: LG Display Co., Ltd.

Inventor： JungSeok SEO ,  PilSang YUN ,  SeHee PARK ,  Jiyong NOH

IPC: H01L27/32 ,  H01L27/12

Abstract: A display device includes a substrate, a pixel driver on the substrate, and a display element connected to the pixel driver. The pixel driver includes a conductive layer on the substrate, a buffer layer on the conductive layer, a semiconductor layer on the buffer layer, a gate electrode, the gate electrode overlapping the semiconductor layer, and a source electrode and a drain electrode connected to the semiconductor layer. The buffer layer includes a flattened portion overlapping the conductive layer, and a stepped portion overlapping the periphery of the conductive layer. The semiconductor layer includes a first oxide semiconductor layer on the buffer layer, and a second oxide semiconductor layer on the first oxide semiconductor layer. A width of the first oxide semiconductor layer is larger than a width of the second oxide semiconductor layer, and the first oxide semiconductor layer is on the stepped portion of the buffer layer.

公开(公告)号：US20210193699A1

公开(公告)日：2021-06-24

申请号：US17196805

申请日：2021-03-09

Applicant: LG Display Co., Ltd.

Inventor： Jaeman JANG ,  SeHee PARK ,  DaeHwan KIM ,  PilSang YUN

IPC: H01L27/12 ,  H01L27/32

Abstract: A display apparatus includes a substrate; a pixel driving circuit on the substrate; and a display unit connected with the pixel driving circuit, wherein the pixel driving circuit includes a first thin film transistor and a second thin film transistor, wherein the first thin film transistor includes, a first gate electrode on the substrate, a first active layer spaced apart from the first gate electrode and overlapping at least a part of the first gate electrode, a first source electrode connected with the first active layer; and a first drain electrode spaced apart from the first source electrode and connected with the first active layer, and wherein the second thin film transistor includes, a second active layer on the substrate, and a second gate electrode spaced apart from the second active layer and partially overlapping at least a part of the second active layer, wherein the first gate electrode is disposed between the substrate and the first active layer, the second active layer is disposed between the substrate and the second gate electrode, and the first gate electrode and the second gate electrode are disposed at an opposite side with respect to the second active layer.

公开(公告)号：US20190249299A1

公开(公告)日：2019-08-15

申请号：US16254264

申请日：2019-01-22

Applicant: LG Display Co., Ltd.

Inventor： Jaeyoon PARK ,  JaeHyeon PARK ,  KiHoon PARK ,  PilSang YUN

IPC: C23C16/455 ,  C23C16/40 ,  C23C16/44 ,  H01L27/12

CPC classification number: C23C16/45523 ,  C23C16/40 ,  C23C16/407 ,  C23C16/4412 ,  C23C16/4481 ,  C23C16/4485 ,  C23C16/45561 ,  H01L27/1262

Abstract: Disclosed are an apparatus and method of manufacturing an oxide film having a uniform composition and thickness. The apparatus includes a lower chamber including a reaction space, a susceptor to support a substrate, a chamber lid including gas injection ports, a gas distribution module between the chamber lid and the susceptor and connected to the gas injection ports, a first source container module comprising a first source gas having a first vapor pressure, a first carrier gas supply module supplying a first carrier gas to the first source container module, a second source container module comprising a second source gas having a second vapor pressure, a force gas supply module supplying a force gas, and a reactant gas supply module supplying a reactant gas.

公开(公告)号：US20240282863A1

公开(公告)日：2024-08-22

申请号：US18634854

申请日：2024-04-12

Applicant: LG Display Co., Ltd.

Inventor： SeHee PARK ,  JungSeok SEO ,  PilSang YUN ,  Jeyong JEON ,  Jaeyoon PARK ,  ChanYong JEONG

IPC: H01L29/786 ,  H01L29/24 ,  H01L29/49 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L29/24 ,  H01L29/4908 ,  H01L29/66742

Abstract: A thin-film transistor includes: a base substrate; a semiconductor layer on the base substrate, the semiconductor layer including a first oxide semiconductor layer and a second oxide semiconductor layer on the first oxide semiconductor layer, the second oxide semiconductor layer having a Hall mobility smaller than a Hall mobility of the first oxide semiconductor layer; a gate electrode spaced apart from the semiconductor layer and partially overlapping the semiconductor layer; a gate insulating layer between the semiconductor layer and the gate electrode; and a first mixture area between the first oxide semiconductor layer and the second oxide semiconductor layer. The second oxide semiconductor layer includes gallium (Ga) of 40 atom % or more in comparison with a total metallic element with respect to a number of atoms. The first mixture area, the first oxide semiconductor layer, and the second oxide semiconductor layer are formed by metal-organic chemical vapor deposition (MOCVD).

公开(公告)号：US20210202755A1

公开(公告)日：2021-07-01

申请号：US17124344

申请日：2020-12-16

Applicant: LG Display Co., Ltd.

Inventor： KyungChul OK ,  JungSeok SEO ,  PilSang YUN ,  Jiyong NOH ,  Jaeman JANG ,  InTak CHO

IPC: H01L29/786 ,  H01L29/66 ,  H01L27/32

Abstract: Disclosed is a thin film transistor, a method for manufacturing the same and a display apparatus comprising the same, wherein the thin film transistor includes a first insulating layer on a substrate, an active layer on the first insulating layer, and a gate electrode spaced apart from the active layer and configured to have at least a portion overlapped with the active layer, wherein the active layer has a single crystal structure of an oxide semiconductor material, and an upper surface of the first insulating layer which contacts the active layer is an oxygen (O) layer made of oxygen (O).

公开(公告)号：US20210193804A1

公开(公告)日：2021-06-24

申请号：US17131284

申请日：2020-12-22

Applicant: LG Display Co., Ltd.

Inventor： InTak CHO ,  Jiyong NOH ,  Jaeman JANG ,  PilSang YUN ,  Jeyong JEON

IPC: H01L29/40 ,  G09G3/32 ,  H01L27/12 ,  H01L29/786 ,  H01L21/02 ,  H01L21/765 ,  H01L29/66

Abstract: A thin film transistor, a display panel comprising the same and a display apparatus are discussed. The thin film transistor comprises a buffer layer embodied on a substrate, a semiconductor layer embodied on the buffer layer, including a channel area, a first conductor portion and a second conductor portion, a gate insulating film embodied on the semiconductor layer, a gate electrode embodied on the gate insulating film, and an auxiliary electrode overlapped with the second conductor portion, wherein the first conductor portion is extended from one side of the channel area, and becomes a source area, and the second conductor portion is extended from the other side of the channel area, and becomes a drain area.

公开(公告)号：US20180151606A1

公开(公告)日：2018-05-31

申请号：US15824974

申请日：2017-11-28

Applicant: LG Display Co., Ltd.

Inventor： SeHee PARK ,  HongRak CHOI ,  PilSang YUN ,  HyungJoon KOO ,  Kwanghwan JI ,  Jaeyoon PARK

IPC: H01L27/12 ,  H01L51/56 ,  H01L27/32 ,  H01L29/49

CPC classification number: H01L27/1288 ,  H01L27/0733 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/1237 ,  H01L27/1248 ,  H01L27/1255 ,  H01L27/3246 ,  H01L27/3248 ,  H01L27/3258 ,  H01L27/3262 ,  H01L29/41733 ,  H01L29/4908 ,  H01L29/78645 ,  H01L29/78696 ,  H01L51/56 ,  H01L2924/1426

Abstract: Disclosed are a transistor substrate, an organic light emitting display panel including the same, a method of manufacturing the transistor substrate, and an organic light emitting display device including the organic light emitting display panel, in which a driving transistor and a switching transistor are provided and each include an oxide semiconductor of which both ends are covered by an insulation layer, and a gate of the driving transistor and a gate of the switching transistor are provided on different layers.