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公开(公告)号：US20230031667A1
公开(公告)日：2023-02-02
申请号：US17788639
申请日：2020-07-20
Inventor： Jin Young KIM , Kiseok CHANG , Kwanghwan JI , Min-Ah PARK , Chong Rae PARK , Sae Jin SUNG
IPC: H01L51/00
Abstract: The present invention relates to a perovskite optoelectronic device and a manufacturing method therefor. The present invention allows manufacture of a perovskite optoelectronic device with high efficiency at a low cost, as well as improving the electrical conductivity of a carbon nanotube electrode, by laying graphene oxide over conventional carbon nanotubes and may also be applied to a flexible device.
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2.发明申请公开(公告)号：US20190165184A1
公开(公告)日：2019-05-30
申请号：US16199945
申请日：2018-11-26
Applicant: LG Display Co., Ltd.
Inventor： Kwanghwan JI
IPC: H01L29/786 , H01L29/66 , H01L29/423 , H01L29/49 , H01L29/51 , G09G3/36
Abstract: A thin film transistor is disclosed, which includes an oxide semiconductor layer on a substrate; a gate insulating film on the oxide semiconductor layer; a gate electrode on the gate insulating film; a hydrogen supply layer on the gate insulating film; a source electrode connected with the oxide semiconductor layer; and a drain electrode spaced apart from the source electrode and connected with the oxide semiconductor layer, wherein the oxide semiconductor layer includes a channel portion overlapped with the gate electrode and a connecting portion not overlapped with the gate electrode, a hydrogen concentration of the connecting portion is higher than that of the channel portion, and the gate insulating film includes a first area overlapped with the gate electrode and a second area not overlapped with the gate electrode, and a hydrogen concentration of the second area is higher that of the first area.
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公开(公告)号：US20180006056A1
公开(公告)日：2018-01-04
申请号：US15391636
申请日：2016-12-27
Applicant: LG Display Co., Ltd.
Inventor： JongUk BAE , YongHo JANG , JunHyeon BAE , Kwanghwan JI , PilSang YUN , Jiyong NOH
IPC: H01L27/12 , G02F1/1368 , H01L27/32 , G02F1/1362 , H01L29/786 , G09G3/36 , G09G3/3266 , G09G3/3258 , G09G3/3275
CPC classification number: H01L27/124 , G02F1/136209 , G02F1/136286 , G02F1/1368 , G09G3/3258 , G09G3/3266 , G09G3/3275 , G09G3/3677 , G09G3/3688 , G09G2300/0426 , G09G2310/0291 , G09G2310/08 , H01L27/3272 , H01L29/41733 , H01L29/66969 , H01L29/78618 , H01L29/7869
Abstract: Disclosed are an oxide thin film transistor (TFT), a method of manufacturing the same, and a display panel and a display device using the same, in which a first conductor and a second conductor are provided at end portions of a semiconductor layer formed of oxide semiconductor. The first conductor and second conductor are electrically connected to a first electrode and a second electrode, and covered by a gate insulation layer. The oxide TFT includes a semiconductor layer provided on a buffer and including an oxide semiconductor, a gate insulation layer covering the semiconductor layer and the buffer, a gate electrode provided on the gate insulation layer to overlap a portion of the semiconductor layer, and a passivation layer covering the gate and the gate insulation layer.
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公开(公告)号：US20240087538A1
公开(公告)日：2024-03-14
申请号：US18242926
申请日：2023-09-06
Inventor： Harkjin KIM , Kwanghwan JI , Byong-Deok CHOI , Bum Sik KIM , Dong Young KIM , Yong Duck KIM , June Hee LEE
IPC: G09G3/3283
CPC classification number: G09G3/3283 , G09G2320/02 , G09G2330/021
Abstract: A display device according to an exemplary embodiment of the present disclosure includes a light emitting diode and a pixel driving circuit which drives the light emitting diode, the pixel driving circuit includes a driving transistor which applies a driving current to the light emitting diode, a first transistor which applies a first reference voltage to a gate electrode of the driving transistor, a second transistor which applies a data voltage to the gate electrode of the driving transistor, a third transistor which applies a second reference voltage to a source electrode of the driving transistor, and a storage capacitor connected to the gate electrode and the source electrode of the driving transistor. According to the present disclosure, the threshold voltage Vth and the mobility of the driving transistors are internally compensated to improve an image quality.
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公开(公告)号：US20160064421A1
公开(公告)日：2016-03-03
申请号：US14838564
申请日：2015-08-28
Applicant: LG Display Co., Ltd.
Inventor： Saeroonter OH , Kwanghwan JI , Hyunsoo SHIN , Jeyong JEON , Dohyung LEE
IPC: H01L27/12 , H01L27/32 , H01L29/786
CPC classification number: H01L27/1222 , H01L27/1218 , H01L27/124 , H01L27/1251 , H01L27/1255 , H01L27/322 , H01L27/3262 , H01L27/3265 , H01L27/3272 , H01L27/3276 , H01L29/78633 , H01L29/78672 , H01L29/7869 , H01L51/5209 , H01L51/5225
Abstract: A thin film transistor (TFT) substrate and a display device using the same are disclosed. The TFT substrate includes a base substrate, a first TFT having a polycrystalline semiconductor and disposed on the base substrate, and a second TFT having an oxide semiconductor and disposed on the first TFT. The second TFT overlaps at least a portion of the first TFT in a plan view.
Abstract translation: 公开了一种薄膜晶体管（TFT）基板和使用其的显示装置。 TFT基板包括基底基板，具有多晶半导体并设置在基底基板上的第一TFT以及设置在第一TFT上的具有氧化物半导体的第二TFT。 第二TFT在平面图中与第一TFT的至少一部分重叠。
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Patent Agency Ranking
公开(公告)号：US20230207701A1
公开(公告)日：2023-06-29
申请号：US18055726
申请日：2022-11-15
Inventor： Jae Kyeong JEONG , Kwanghwan JI , Harkjin KIM , Minhoe CHO
IPC: H01L29/786 , H01L27/12
CPC classification number: H01L29/7869 , H01L27/3262 , H01L27/1225
Abstract: A thin-film transistor includes a gate electrode, and an active layer insulated from the gate electrode by a gate insulating layer, and the active layer includes a quasi-superlattice structure with a first oxide semiconductor material and a second oxide semiconductor material having a larger bandgap than the first oxide semiconductor material alternately stacked at least twice. A display apparatus includes a thin-film transistor including an active layer of a quasi-superlattice structure for each pixel.
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公开(公告)号：US20220367524A1
公开(公告)日：2022-11-17
申请号：US17743309
申请日：2022-05-12
Inventor： Jang-Ung PARK , Harkjin KIM , Kwanghwan JI , Hyobeom KIM , Younggeun PARK
Abstract: The present disclosure relates to an anisotropic conductive film capable of electrode bonding even at a low temperature and maintaining excellent conductivity and flexibility, a manufacturing method thereof, and a display device using the same. The anisotropic conductive film contains conductive microcapsules including a liquid metal in a binder layer.
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公开(公告)号：US20180151606A1
公开(公告)日：2018-05-31
申请号：US15824974
申请日：2017-11-28
Applicant: LG Display Co., Ltd.
Inventor： SeHee PARK , HongRak CHOI , PilSang YUN , HyungJoon KOO , Kwanghwan JI , Jaeyoon PARK
CPC classification number: H01L27/1288 , H01L27/0733 , H01L27/1214 , H01L27/1225 , H01L27/1237 , H01L27/1248 , H01L27/1255 , H01L27/3246 , H01L27/3248 , H01L27/3258 , H01L27/3262 , H01L29/41733 , H01L29/4908 , H01L29/78645 , H01L29/78696 , H01L51/56 , H01L2924/1426
Abstract: Disclosed are a transistor substrate, an organic light emitting display panel including the same, a method of manufacturing the transistor substrate, and an organic light emitting display device including the organic light emitting display panel, in which a driving transistor and a switching transistor are provided and each include an oxide semiconductor of which both ends are covered by an insulation layer, and a gate of the driving transistor and a gate of the switching transistor are provided on different layers.
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公开(公告)号：US20230387138A1
公开(公告)日：2023-11-30
申请号：US18324103
申请日：2023-05-25
Applicant: LG Display Co., Ltd. , IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)
Inventor： Harkjin KIM , Kwanghwan JI , Jae Kyeong JEONG , Do hyun KIM , Dong Young KIM , Jeongeun OH
IPC: H01L27/12
CPC classification number: H01L27/1225
Abstract: Embodiments of the present disclosure relate to a thin film transistor array substrate and a display device. Since a wavy structure is formed through heat treatment in a structure in which a first buffer layer made of an organic material, a second buffer layer made of a metal oxide and a third buffer layer made of an inorganic material are stacked, it is possible to provide a display device including an array substrate which has stretchable characteristics through the wavy structure while preventing a crack from occurring in the third buffer layer and preventing characteristics of thin film transistors disposed on the third buffer layer from degrading.
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10.发明公开公开(公告)号：US20230252946A1
公开(公告)日：2023-08-10
申请号：US18012550
申请日：2021-06-21
Inventor： Joon-Hyuk CHANG , Kwanghwan JI , Kwan-Ho PARK , Kiseok CHANG , Junghoon SEO , Kipyo HONG , Hyojung PARK , Seunghyuck LEE
IPC: G09G3/3291 , G09G3/3266 , G06N3/08
CPC classification number: G09G3/3291 , G09G3/3266 , G06N3/08 , G09G2310/08 , G09G2320/046 , G09G2360/16 , G09G2310/0289
Abstract: The present invention relates to a display apparatus that allows a compensated data voltage to be supplied to each pixel by compensating for the data voltage so as to prevent burn-in from occurring in a display panel, a method for compensating a data signal thereof, and a method for generating a deep learning-based compensation model. To implement same, the present invention provides the display apparatus comprising a timing controller having mounted therein the compensation model generated by learning, in a deep learning method, the temperature, time, average brightness, and data voltage for each pixel. Accordingly, the present invention has an effect of preventing burn-in from occurring in each pixel by supplying each pixel with the compensated data voltage generated via the compensation model.
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