公开(公告)号：US20230138887A1

公开(公告)日：2023-05-04

申请号：US17793896

申请日：2020-02-03

Applicant: LG ELECTRONICS INC.

Inventor： Dohwan YANG ,  Dohee KIM ,  Yongil SHIN

IPC: H01L25/075 ,  H01L33/00

Abstract: According to a semiconductor light-emitting element collecting apparatus and a semiconductor light-emitting element collecting method using the same according to an embodiment of the present invention, in order to collect semiconductor light-emitting elements, a fluid accommodated in a housing unit is rotated such that semiconductor light-emitting elements are guided to sink to a bottom surface of the housing unit, and accordingly, the semiconductor light-emitting elements can be rapidly collected. In addition, a collecting operation can be performed without exerting the physical force to the semiconductor light-emitting elements, a collecting rate of the semiconductor light-emitting elements can be improved.

公开(公告)号：US20140041720A1

公开(公告)日：2014-02-13

申请号：US13779025

申请日：2013-02-27

Applicant: LG ELECTRONICS INC.

Inventor： Juhong YANG ,  Dohwan YANG ,  Ilhyoung JUNG ,  Jinah KIM

IPC: H01L31/0224

CPC classification number: H01L31/022458 ,  H01L31/02167 ,  H01L31/022425 ,  H01L31/056 ,  H01L31/068 ,  Y02E10/52 ,  Y02E10/547

Abstract: A solar cell includes a substrate, an emitter region positioned at a first surface of the substrate, a first electrode positioned on the first surface of the substrate, a back passivation layer positioned on a second surface opposite the first surface of the substrate, and a second electrode which is positioned on the back passivation layer and is electrically connected to the substrate through holes of the back passivation layer. The second electrode includes connection electrodes positioned inside the holes of the back passivation layer and a back electrode layer positioned on the connection electrodes and the back passivation layer. An adhesion enhanced layer is positioned between the back electrode layer and the back passivation layer and contains at least one of intrinsic amorphous silicon and intrinsic microcrystalline silicon.

Abstract translation: 太阳能电池包括衬底，位于衬底的第一表面处的发射极区域，位于衬底的第一表面上的第一电极，位于与衬底的第一表面相对的第二表面上的背面钝化层，以及 第二电极位于背部钝化层上，并且通过背面钝化层的孔与基板电连接。 第二电极包括位于背面钝化层的孔内的连接电极和位于连接电极和背面钝化层上的背面电极层。 粘合增强层位于背电极层和背部钝化层之间，并且包含本征非晶硅和本征微晶硅中的至少一种。