公开(公告)号：US20190188131A1

公开(公告)日：2019-06-20

申请号：US15841640

申请日：2017-12-14

Applicant: MACRONIX INTERNATIONAL CO., LTD.

Inventor： Su-Chueh LO ,  Chun-Yu LIAO

IPC: G06F12/06 ,  G11C11/417 ,  G11C11/16

CPC classification number: G06F12/0646 ,  G06F2003/0691 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/417

Abstract: Provided is a memory device including: a memory array, including a flag memory array having a plurality of flag memory cells and a data memory array having a plurality of data memory cells, the corresponding flag memory cells being used to record whether the corresponding data memory cells have been written or not. In initialization, the flag memory array is initialized by the control circuit but the data memory array is not initialized.