METHOD AND ELECTRONIC DEVICE FOR SAVING POWER APPLIED TO A ROUTER

    公开(公告)号:US20230336472A1

    公开(公告)日:2023-10-19

    申请号:US17724043

    申请日:2022-04-19

    Applicant: MEDIATEK INC.

    CPC classification number: H04L45/56 H04L45/14 H04L61/256

    Abstract: A method of routing data packets for a router is provided. The router includes a software network address translator (NAT) and a hardware NAT. The method includes routing, by the software NAT, a first data packet based on a routing rule stored in the software NAT, wherein the software NAT has a routing rule removing function to remove the routing rule stored in the software NAT; sending, by the software NAT, the routing rule to the hardware NAT; storing the routing rule, by the hardware NAT, in the hardware NAT; and routing, by the hardware NAT instead of the software NAT, a second data packet based on the routing rule stored in the hardware NAT. The routing rule removing function of the software NAT for the routing rule stored in the software NAT is disabled.

    SEMICONDUCTOR STRUCTURE WITH THROUGH-SILICON VIA
    13.
    发明申请
    SEMICONDUCTOR STRUCTURE WITH THROUGH-SILICON VIA 有权
    通过硅的半导体结构

    公开(公告)号:US20160268183A1

    公开(公告)日:2016-09-15

    申请号:US15066256

    申请日:2016-03-10

    Applicant: MediaTek Inc.

    CPC classification number: H01L23/481 H01L23/53295 H01L27/0207 H01L27/092

    Abstract: A semiconductor structure includes a semiconductor substrate and a conductive element formed in a portion of the semiconductor substrate. The semiconductor structure further includes a plurality of insulating elements formed in portions of the semiconductor substrate at a first region surrounding the conductive element and a semiconductor device formed over a portion of the semiconductor substrate at a second region adjacent to the first region. The first region is formed between the conductive element and the second region.

    Abstract translation: 半导体结构包括半导体衬底和形成在半导体衬底的一部分中的导电元件。 半导体结构还包括在围绕导电元件的第一区域处形成在半导体衬底的部分中的多个绝缘元件和在与第一区域相邻的第二区域处形成在半导体衬底的一部分上的半导体器件。 第一区域形成在导电元件和第二区域之间。

    SEAL RING STRUCTURE WITH CAPACITOR
    16.
    发明申请
    SEAL RING STRUCTURE WITH CAPACITOR 有权
    密封圈结构与电容器

    公开(公告)号:US20140312470A1

    公开(公告)日:2014-10-23

    申请号:US14320725

    申请日:2014-07-01

    Applicant: MediaTek Inc.

    Abstract: A semiconductor device includes a semiconductor substrate of a first conductivity type having a chip region enclosed by a seal ring region. An insulating layer is on the semiconductor substrate. A seal ring structure is embedded in the insulating layer corresponding to the seal ring region. And, a plurality of doping regions are located beneath the first seal ring structure.

    Abstract translation: 半导体器件包括具有由密封环区域包围的芯片区域的第一导电类型的半导体衬底。 绝缘层位于半导体衬底上。 密封环结构埋设在对应于密封圈区域的绝缘层中。 并且,多个掺杂区域位于第一密封环结构下方。

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