公开(公告)号：US20050014372A1

公开(公告)日：2005-01-20

申请号：US10875961

申请日：2004-06-25

申请人： Satoshi Shimonishi ,  Takanori Matsumoto ,  Katsumi Horiguchi ,  Kenji Yamamoto ,  Fumihiko Higuchi

发明人： Satoshi Shimonishi ,  Takanori Matsumoto ,  Katsumi Horiguchi ,  Kenji Yamamoto ,  Fumihiko Higuchi

IPC分类号： H01L21/302 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/461

CPC分类号： H01J37/32568 ,  H01L21/3065 ,  H01L21/3081

摘要： When etching a silicon layer 210 with a processing gas containing a mixed gas constituted of HBr gas, and O2 gas and SiF4 gas and further mixed with both of or either of SF6 gas and NF3 gas by using a pre-patterned mask having a silicon oxide film layer 204 inside an airtight processing container 102, high-frequency power with a first frequency is applied from a first high-frequency source 118 and high-frequency power with a second frequency lower than the first frequency is applied from a second high-frequency source 138 to a lower electrode 104 on which a workpiece is placed. Through this etching process, holes or grooves achieving a high aspect ratio are formed in a desirable shape at the silicon layer.

摘要翻译： 当使用含有由HBr气体和O 2气体和SiF 4气体组成的混合气体的处理气体来蚀刻硅层210时，通过使用具有氧化硅的预图案化掩模进一步与SF 6气体和NF 3气体中的任一种 在气密处理容器102内的薄膜层204，从第一高频源118施加具有第一频率的高频功率，并且从第二高频源施加具有低于第一频率的第二频率的高频功率 源138连接到其上放置工件的下电极104。 通过该蚀刻工艺，在硅层处形成期望的形状，实现高纵横比的孔或槽。

公开(公告)号：US5560804A

公开(公告)日：1996-10-01

申请号：US380325

申请日：1995-01-30

申请人： Fumihiko Higuchi ,  Yoshio Fukasawa

发明人： Fumihiko Higuchi ,  Yoshio Fukasawa

IPC分类号： H01L21/3213 ,  H01L21/00

CPC分类号： H01L21/32137

摘要： In plasma-etching a polysilicon layer of a semiconductor wafer where the polysilicon layer is formed on an SiO.sub.2 film, plasma of a processing gas including a halogen element containing gas and a gas containing oxygen or nitrogen is generated, and a predetermined portion of the polysilicon layer is selectively exposed in plasma, thereby etching the portion.

摘要翻译： 在等离子体蚀刻在SiO 2膜上形成多晶硅层的半导体晶片的多晶硅层中，产生包含含有卤素元素的气体和含有氧或氮的气体的处理气体的等离子体，并且多晶硅的预定部分 层被选择性地暴露在等离子体中，从而蚀刻该部分。