公开(公告)号：US06685797B2

公开(公告)日：2004-02-03

申请号：US09527681

申请日：2000-03-17

申请人： Takanori Matsumoto ,  Satoshi Shimonishi ,  Fumio Sato ,  Masaki Narita

发明人： Takanori Matsumoto ,  Satoshi Shimonishi ,  Fumio Sato ,  Masaki Narita

IPC分类号： H05H100

CPC分类号： H01J37/32082

摘要： A semiconductor device manufacturing system has a vacuum chamber which is provided with a cathode electrode for holding a substrate to be processed and into which a reactive gas for generating discharging plasma by the application of a high-frequency electric power is introduced, a measuring circuit which measures at least one of the impedance of a system including the plasma, the peak-to-peak voltage of a high-frequency signal applied to the plasma, and a self-bias voltage applied to the cathode electrode, and a sense circuit which compares the measured value from the measuring circuit with previously prepared data and senses the change of processing characteristics with time for the substrate in using the discharging plasma or the cleaning time of the inside of the vacuum chamber.

公开(公告)号：US06989073B2

公开(公告)日：2006-01-24

申请号：US10742881

申请日：2003-12-23

申请人： Takanori Matsumoto ,  Satoshi Shimonishi ,  Fumio Sato ,  Masaki Narita

发明人： Takanori Matsumoto ,  Satoshi Shimonishi ,  Fumio Sato ,  Masaki Narita

IPC分类号： H01L21/306

CPC分类号： H01J37/32082

摘要： A semiconductor device manufacturing system has a vacuum chamber which is provided with a cathode electrode for holding a substrate to be processed and into which a reactive gas for generating discharging plasma by the application of a high-frequency electric power is introduced, a measuring circuit which measures at least one of the impedance of a system including the plasma, the peak-to-peak voltage of a high-frequency signal applied to the plasma, and a self-bias voltage applied to the cathode electrode, and a sense circuit which compares the measured value from the measuring circuit with previously prepared data and senses the change of processing characteristics with time for the substrate in using the discharging plasma or the cleaning time of the inside of the vacuum chamber.

公开(公告)号：US06303466B1

公开(公告)日：2001-10-16

申请号：US09531491

申请日：2000-03-20

申请人： Satoshi Shimonishi ,  Takanori Matsumoto

发明人： Satoshi Shimonishi ,  Takanori Matsumoto

IPC分类号： H01L2176

CPC分类号： H01L21/76232

摘要： A method for manufacturing a semiconductor device capable of improving properties during etching without degrading original properties of a doped oxide film as a hard mask includes a step of baking the doped oxide film after patterned but prior to etching. Thereby, changes in configuration or shape upon etching caused by absorption of moisture is prevented.

摘要翻译： 一种用于制造半导体器件的方法，其能够改善蚀刻期间的性能而不降低作为硬掩模的掺杂氧化物膜的原始性能，包括在图案化之后但在蚀刻之前烘焙掺杂氧化物膜的步骤。 因此，防止了通过吸收水分导致的蚀刻时的形状或形状的变化。

公开(公告)号：US07067761B2

公开(公告)日：2006-06-27

申请号：US10742882

申请日：2003-12-23

申请人： Takanori Matsumoto ,  Satoshi Shimonishi ,  Fumio Sato ,  Masaki Narita

发明人： Takanori Matsumoto ,  Satoshi Shimonishi ,  Fumio Sato ,  Masaki Narita

IPC分类号： B23K10/00

CPC分类号： H01J37/32082

摘要： A semiconductor device manufacturing system has a vacuum chamber which is provided with a cathode electrode for holding a substrate to be processed and into which a reactive gas for generating discharging plasma by the application of a high-frequency electric power is introduced, a measuring circuit which measures at least one of the impedance of a system including the plasma, the peak-to-peak voltage of a high-frequency signal applied to the plasma, and a self-bias voltage applied to the cathode electrode, and a sense circuit which compares the measured value from the measuring circuit with previously prepared data and senses the change of processing characteristics with time for the substrate in using the discharging plasma or the cleaning time of the inside of the vacuum chamber.

公开(公告)号：US20050014372A1

公开(公告)日：2005-01-20

申请号：US10875961

申请日：2004-06-25

申请人： Satoshi Shimonishi ,  Takanori Matsumoto ,  Katsumi Horiguchi ,  Kenji Yamamoto ,  Fumihiko Higuchi

发明人： Satoshi Shimonishi ,  Takanori Matsumoto ,  Katsumi Horiguchi ,  Kenji Yamamoto ,  Fumihiko Higuchi

IPC分类号： H01L21/302 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/461

CPC分类号： H01J37/32568 ,  H01L21/3065 ,  H01L21/3081

摘要： When etching a silicon layer 210 with a processing gas containing a mixed gas constituted of HBr gas, and O2 gas and SiF4 gas and further mixed with both of or either of SF6 gas and NF3 gas by using a pre-patterned mask having a silicon oxide film layer 204 inside an airtight processing container 102, high-frequency power with a first frequency is applied from a first high-frequency source 118 and high-frequency power with a second frequency lower than the first frequency is applied from a second high-frequency source 138 to a lower electrode 104 on which a workpiece is placed. Through this etching process, holes or grooves achieving a high aspect ratio are formed in a desirable shape at the silicon layer.

摘要翻译： 当使用含有由HBr气体和O 2气体和SiF 4气体组成的混合气体的处理气体来蚀刻硅层210时，通过使用具有氧化硅的预图案化掩模进一步与SF 6气体和NF 3气体中的任一种 在气密处理容器102内的薄膜层204，从第一高频源118施加具有第一频率的高频功率，并且从第二高频源施加具有低于第一频率的第二频率的高频功率 源138连接到其上放置工件的下电极104。 通过该蚀刻工艺，在硅层处形成期望的形状，实现高纵横比的孔或槽。