公开(公告)号：US20050014372A1

公开(公告)日：2005-01-20

申请号：US10875961

申请日：2004-06-25

申请人： Satoshi Shimonishi ,  Takanori Matsumoto ,  Katsumi Horiguchi ,  Kenji Yamamoto ,  Fumihiko Higuchi

发明人： Satoshi Shimonishi ,  Takanori Matsumoto ,  Katsumi Horiguchi ,  Kenji Yamamoto ,  Fumihiko Higuchi

IPC分类号： H01L21/302 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/461

CPC分类号： H01J37/32568 ,  H01L21/3065 ,  H01L21/3081

摘要： When etching a silicon layer 210 with a processing gas containing a mixed gas constituted of HBr gas, and O2 gas and SiF4 gas and further mixed with both of or either of SF6 gas and NF3 gas by using a pre-patterned mask having a silicon oxide film layer 204 inside an airtight processing container 102, high-frequency power with a first frequency is applied from a first high-frequency source 118 and high-frequency power with a second frequency lower than the first frequency is applied from a second high-frequency source 138 to a lower electrode 104 on which a workpiece is placed. Through this etching process, holes or grooves achieving a high aspect ratio are formed in a desirable shape at the silicon layer.

摘要翻译： 当使用含有由HBr气体和O 2气体和SiF 4气体组成的混合气体的处理气体来蚀刻硅层210时，通过使用具有氧化硅的预图案化掩模进一步与SF 6气体和NF 3气体中的任一种 在气密处理容器102内的薄膜层204，从第一高频源118施加具有第一频率的高频功率，并且从第二高频源施加具有低于第一频率的第二频率的高频功率 源138连接到其上放置工件的下电极104。 通过该蚀刻工艺，在硅层处形成期望的形状，实现高纵横比的孔或槽。

公开(公告)号：US07109123B2

公开(公告)日：2006-09-19

申请号：US10647433

申请日：2003-08-26

申请人： Takanori Mimura ,  Kazuya Nagaseki ,  Kenji Yamamoto ,  Katsumi Horiguchi ,  Yahui Huang

发明人： Takanori Mimura ,  Kazuya Nagaseki ,  Kenji Yamamoto ,  Katsumi Horiguchi ,  Yahui Huang

IPC分类号： H01L21/302

CPC分类号： H01J37/32082 ,  H01J37/3266 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/76898

摘要： A Si etching method etches a Si wafer held on a susceptor placed in a processing vessel by a plasma-assisted etching process. A mixed etching gas prepared by mixing fluorosulfur gas, such as SF6 gas, or fluorocarbon gas, O2 gas and fluorosilicon gas, such as SiF4 gas is supplied into the processing vessel. RF power of 40 MHz or above is applied to the mixed etching gas to generate a plasma. The Si wafer is etched with radicals and ions contained in the plasma.

摘要翻译： Si蚀刻方法通过等离子体辅助蚀刻工艺蚀刻保持在放置在处理容器中的基座上的Si晶片。 通过混合诸如SF 6气体的氟化硫气体或碳氟化合物气体O 2气体和诸如SiF 4气体的氟硅气体制备的混合蚀刻气体， 将气体供应到处理容器中。 将40MHz以上的RF功率施加到混合蚀刻气体以产生等离子体。 用等离子体中所含的自由基和离子蚀刻Si晶片。

公开(公告)号：US11901568B2

公开(公告)日：2024-02-13

申请号：US17653400

申请日：2022-03-03

申请人： Ryo Shimizu ,  Kumiko Nomura ,  Tomohiro Takeshita ,  Shu Miyasaka ,  Kenji Yamamoto

发明人： Ryo Shimizu ,  Kumiko Nomura ,  Tomohiro Takeshita ,  Shu Miyasaka ,  Kenji Yamamoto

IPC分类号： H01M4/00 ,  H01M4/92 ,  H01M4/88 ,  C22C5/04

CPC分类号： H01M4/926 ,  H01M4/8842 ,  C22C5/04

摘要： To provide an electrocatalyst for fuel cells, which is configured to ensure both the initial performance and durability of fuel cells. An electrocatalyst for fuel cells, wherein the electrocatalyst comprises a carbon support including a mesopore and a catalyst alloy supported on the carbon support, and the catalyst alloy is a catalyst alloy of platinum and a transition metal; wherein the mesopore includes at least one throat; wherein an average effective diameter of the at least one throat is 1.8 nm or more and less than 3.2 nm; and wherein a transition metal ratio of the catalyst alloy supported on a deeper-side region than the at least one throat, is lower than the transition metal ratio of the catalyst alloy supported on a nearer-side region than the at least one throat.

公开(公告)号：US10050257B2

公开(公告)日：2018-08-14

申请号：US13995916

申请日：2011-12-12

申请人： Masakazu Seki ,  Satoshi Suzuki ,  Tomohiko Furutani ,  Kenji Yamamoto ,  Koichi Ashizawa

发明人： Masakazu Seki ,  Satoshi Suzuki ,  Tomohiko Furutani ,  Kenji Yamamoto ,  Koichi Ashizawa

IPC分类号： H01M4/00 ,  H01M4/04 ,  C22C21/00 ,  C22F1/04 ,  H01M4/66 ,  H01M10/0525

摘要： An aluminum alloy foil for an electrode current collectors has a high post-drying strength after application of an active material while keeping a high electrical conductivity. The aluminum alloy foil includes 0.1 to 1.0 mass % of Fe, 0.01 to 0.5% of Si, and 0.01 to 0.2 mass % of Cu, and the rest includes Al and unavoidable impurities. The aluminum alloy foil after final cold rolling has a tensile strength of 220 MPa or higher, a 0.2% yield strength of 180 MPa or higher, and an electrical conductivity of 58% IACS or higher. The aluminum alloy foil has a tensile strength of 190 MPa or higher and a 0.2% yield strength of 160 MPa or higher after the aluminum alloy foil is heat treated at any of 120° C. for 24 hours, 140° C. for 3 hours, and 160° C. for 15 minutes.

公开(公告)号：US10016798B2

公开(公告)日：2018-07-10

申请号：US14424582

申请日：2012-08-31

申请人： Kenji Yamamoto

发明人： Kenji Yamamoto

IPC分类号： F16D3/18 ,  B21B35/14 ,  F16D3/16 ,  F16D3/10 ,  F16D3/84 ,  F16J15/52

CPC分类号： B21B35/147 ,  F16D3/10 ,  F16D3/16 ,  F16D3/185 ,  F16D3/845 ,  F16D2300/06 ,  F16J15/525

摘要： In a gear spindle, outer cylinder gear sections (11) are each integrally formed on an inner peripheral surface of a spindle outer cylinder and inner cylinder gear sections (14) are each integrally formed on an outer peripheral surface of a spindle inner cylinder (13). An oil seal (27) that seals in the lubricating oil (20) for each of the aforementioned gear sections includes, a seal body (29) having a channel-shaped cross section and interposed in the peripheral gap between the inner peripheral surface of the spindle outer cylinder and the outer peripheral surface of the spindle inner cylinder (13), and a seal mounting member (30) that includes a band, a spring, or the like that tightens and fixes the seal body to the outer peripheral surface of the spindle inner cylinder (13) to allow expansion of the seal body in the axial direction in the aforementioned peripheral gap.

公开(公告)号：US09902093B2

公开(公告)日：2018-02-27

申请号：US14009522

申请日：2012-04-03

申请人： Takaharu Kashi ,  Kenji Yamamoto

发明人： Takaharu Kashi ,  Kenji Yamamoto

IPC分类号： B29C33/68 ,  B21D37/01 ,  C23C14/06 ,  C23C14/58

CPC分类号： B29C33/68 ,  B21D37/01 ,  C23C14/0641 ,  C23C14/5886

摘要： A press-forming mold has a protective film for preventing seizing during press-forming formed on at least a forming surface that comes into contact with a formed body. The protective film is formed by PVD. An arbitrary selection section extracted from the surface of the protective film is divided into a plurality of individual sections; and, when the gradient of the surface at the nth division point is represented by (dZn/dXn), taking N to represent the number of divisions, the root-mean-square RΔq calculated by the following numerical expression is no greater than 0.032. R ⁢ ⁢ Δ ⁢ ⁢ q = 1 N ⁢ ∑ n = 1 N ⁢ ⁢ ( d ⁢ ⁢ Z n d ⁢ ⁢ X n ) 2 It is thereby possible to improve the seizing resistance of a press-forming mold having a protective film formed by PVD.

公开(公告)号：US09546408B2

公开(公告)日：2017-01-17

申请号：US14005853

申请日：2012-03-13

申请人： Akihiro Sakamoto ,  Kazuo Okamura ,  Kenji Yamamoto ,  Tomohiko Omura ,  Yuji Arai

发明人： Akihiro Sakamoto ,  Kazuo Okamura ,  Kenji Yamamoto ,  Tomohiko Omura ,  Yuji Arai

IPC分类号： C21D1/18 ,  C21D1/19 ,  C21D6/00 ,  C21D9/08 ,  C22C38/00 ,  C22C38/02 ,  C22C38/04 ,  C22C38/06 ,  C22C38/22 ,  C22C38/24 ,  C22C38/26 ,  C22C38/42 ,  C22C38/44 ,  C22C38/46 ,  C22C38/48 ,  C22C38/18 ,  C22C38/40 ,  C22C1/02

CPC分类号： C21D1/18 ,  C21D1/19 ,  C21D6/002 ,  C21D9/08 ,  C21D2221/00 ,  C22C1/02 ,  C22C38/001 ,  C22C38/02 ,  C22C38/04 ,  C22C38/06 ,  C22C38/18 ,  C22C38/22 ,  C22C38/24 ,  C22C38/26 ,  C22C38/40 ,  C22C38/42 ,  C22C38/44 ,  C22C38/46 ,  C22C38/48

摘要： A method for quenching a steel pipe by water cooling from an outer surface thereof, where pipe end portions are not subjected to water cooling, and at least part of a main body other than the pipe end portions is subjected to water cooling. A region(s) that is not subjected to direct water cooling over an entire circumference thereof can be along an axial direction at least in part of the main body other than the pipe end portions. The start and stop of water cooling can be intermittent at least in part of the quenching. During the water cooling of the pipe outer surface, an intensified water cooling can be performed in a temperature range in which the pipe outer surface temperature is higher than Ms point. Thereafter, the cooling can be switched to moderate cooling so that the outer surface is cooled down to Ms point or lower.

摘要翻译： 通过水管从其外表面进行水冷淬火的方法，其中管端部不进行水冷，至少部分管端部以外的主体进行水冷。 在其整个圆周上不经受直接水冷却的区域可以沿除了管端部以外的主体的至少一部分的轴向方向。 水冷却的开始和停止至少部分地可以是间歇性的淬火。 在管外表面的水冷却期间，可以在管外表面温度高于Ms点的温度范围内进行增强的水冷。 此后，可以将冷却切换到适度的冷却，使得外表面冷却至Ms点或更低。

公开(公告)号：US09297061B2

公开(公告)日：2016-03-29

申请号：US12449303

申请日：2008-02-15

申请人： Takashi Kuchiyama ,  Kenji Yamamoto

发明人： Takashi Kuchiyama ,  Kenji Yamamoto

IPC分类号： B32B9/00 ,  C23C14/08 ,  C03C17/34

CPC分类号： C23C14/086 ,  C03C17/3441 ,  C03C2217/944 ,  C03C2218/365

摘要： In a transparent electroconductive film including a transparent substrate and a transparent electroconductive oxide layer disposed on the transparent substrate, when the transparent electroconductive oxide layer is composed of zinc oxide, the surface resistivity of the transparent electroconductive oxide layer increases with time and thus it has been difficult to obtain a transparent electroconductive film stable against an environmental variation. Consequently, hard carbon films are provided on the surfaces of a transparent electroconductive oxide layer including at least one layer and containing zinc oxide as a main component in “the order of transparent substrate-hard carbon film-transparent electroconductive oxide layer-hard carbon film” or “the order of hard carbon film-transparent substrate-transparent electroconductive oxide layer-hard carbon film”. Alternatively, an organosilicon compound covering layer is provided on a surface of the transparent electroconductive oxide layer. Thereby, the water contact angle can be 75 degrees or more, and an increase in the resistivity of the transparent electroconductive oxide layer can be suppressed.

摘要翻译： 在透明导电膜包括透明基板和透明导电氧化物层的透明导电膜上，当透明导电氧化物层由氧化锌组成时，透明导电氧化物层的表面电阻率随着时间的推移而增加， 难以获得对环境变化稳定的透明导电膜。 因此，在“透明基板 - 硬质碳膜透明导电氧化物层 - 硬质碳膜”的顺序，在包含至少一层并含有氧化锌作为主要成分的透明导电氧化物层的表面上设置硬质碳膜， 或“硬碳膜透明基板透明导电氧化物层 - 硬质碳膜的顺序”。 或者，在透明导电氧化物层的表面上设置有机硅化合物覆盖层。 因此，水接触角可以为75度以上，并且可以抑制透明导电氧化物层的电阻率的增加。

公开(公告)号：US09266180B2

公开(公告)日：2016-02-23

申请号：US13805259

申请日：2011-06-15

申请人： Shinichi Tanifuji ,  Kenji Yamamoto ,  Homare Nomura ,  Yoshinori Kurokawa ,  Naoyuki Goto

发明人： Shinichi Tanifuji ,  Kenji Yamamoto ,  Homare Nomura ,  Yoshinori Kurokawa ,  Naoyuki Goto

IPC分类号： B23K9/00 ,  C23C14/32 ,  H01J37/32 ,  H01J37/34

CPC分类号： B23K9/00 ,  C23C14/325 ,  H01J37/32055 ,  H01J37/3402

摘要： An arc evaporation source having fast film-forming speed includes: at least one circumference magnet surrounding the circumference of a target, wherein the magnetization direction of the magnet runs orthogonal to the target surface; a non-ring shaped first permanent magnet on the target's rear surface side has a polarity in the same direction as the circumference magnet, and is arranged so that its magnetization direction runs orthogonal to the target's surface; a non-ring shaped second permanent magnet arranged either on the rear surface side of the first permanent magnet or between the first permanent magnet and the target, so as to leave a gap from the first permanent magnet, has a polarity in the same direction as the circumference magnet, and is arranged so that its magnetization direction runs orthogonal to the surface of the target; and a magnetic body between the first permanent magnet and the second permanent magnet.

摘要翻译： 具有快速成膜速度的电弧蒸发源包括：围绕靶周围的至少一个圆周磁体，其中磁体的磁化方向正交于目标表面; 目标的背面侧的非环状的第一永久磁铁具有与周边磁体相同方向的极性，并且被配置为使其磁化方向与目标表面正交; 布置在第一永磁体的后表面侧或第一永磁体与靶之间以便与第一永久磁铁隔开间隙的非环形的第二永久磁铁的极性与 圆周磁体，并且被布置成使得其磁化方向垂直于靶的表面; 以及在第一永磁体和第二永磁体之间的磁体。

公开(公告)号：US09200360B2

公开(公告)日：2015-12-01

申请号：US13263946

申请日：2010-04-14

申请人： Shinichi Tanifuji ,  Kenji Yamamoto ,  Hirofumi Fujii ,  Yoshinori Kurokawa

发明人： Shinichi Tanifuji ,  Kenji Yamamoto ,  Hirofumi Fujii ,  Yoshinori Kurokawa

IPC分类号： C23C14/00 ,  C23C14/32 ,  C23C14/54 ,  H01J37/32

CPC分类号： C23C14/325 ,  C23C14/54 ,  H01J37/32055 ,  H01J37/32669 ,  H01J37/34 ,  H01J37/345

摘要： Provided is an arc evaporation source wherein film-forming speed is increased by inducing magnetic lines in the substrate direction. The arc evaporation source is provided with: at least one outer circumferential magnet (3), which is disposed such that the outer circumferential magnet surrounds the outer circumference of a target (2) and that the magnetization direction thereof is in the direction orthogonally intersecting the surface of the target (2); and a rear surface magnet (4) disposed on the rear surface side of the target (2). The rear surface magnet (4) has a non-ring-shaped first permanent magnet (4A) wherein the polarity thereof faces the same direction as the polarity of the outer circumferential magnet (3) and the magnetization direction of the rear surface magnet (4) is in the direction orthogonally intersecting the surface of the target (2).

摘要翻译： 提供了一种电弧蒸发源，其中通过在基板方向上诱导磁线来增加成膜速度。 电弧蒸发源设置有：至少一个外周磁铁（3），其设置成使得外周磁铁围绕靶（2）的外周，并且其磁化方向与正交方向正交的方向 目标（2）的表面; 以及设置在所述靶（2）的背面侧的后表面磁体（4）。 后表面磁体（4）具有非环状的第一永久磁铁（4A），其极性与外周磁铁（3）的极性和背面磁体（4）的磁化方向相同 ）在与靶（2）的表面正交相交的方向上。