公开(公告)号：US06943045B2

公开(公告)日：2005-09-13

申请号：US10468452

申请日：2003-02-27

申请人： Masahiko Kitamura ,  Masatoshi Nanjo ,  Kouichi Yajima ,  Shinichi Namioka

发明人： Masahiko Kitamura ,  Masatoshi Nanjo ,  Kouichi Yajima ,  Shinichi Namioka

IPC分类号： H01L21/683 ,  B24B7/22 ,  H01L21/00 ,  H01L21/02 ,  H01L21/301 ,  H01L21/68 ,  H01L21/66

CPC分类号： H01L21/6836 ,  B24B7/228 ,  B24B37/042 ,  H01L21/67132 ,  H01L2221/68327

摘要： A semiconductor wafer protecting unit which enables a semiconductor wafer to be handled as required, without breakage of the semiconductor wafer, even when the back of the semiconductor wafer is ground to decrease the thickness of the semiconductor wafer markedly; and a semiconductor wafer processing method using such a semiconductor wafer protecting unit. The semiconductor wafer protecting unit is composed of a magnetized tape having one surface with tackiness, and a magnetic substrate having many pores formed at least in a central zone thereof.

摘要翻译： 半导体晶片保护单元，即使在半导体晶片的背面被研磨以显着地减小半导体晶片的厚度的情况下，也能够在不破坏半导体晶片的情况下根据需要处理半导体晶片; 以及使用这种半导体晶片保护单元的半导体晶片处理方法。 半导体晶片保护单元由具有一个具有粘性的表面的磁化带和至少在其中心区形成的具有许多孔的磁性基底组成。

公开(公告)号：US06939741B2

公开(公告)日：2005-09-06

申请号：US10475257

申请日：2003-01-15

申请人： Masateru Fukuoka ,  Yasuhiko Oyama ,  Munehiro Hatai ,  Satoshi Hayashi ,  Shigeru Danjo ,  Masahiko Kitamura ,  Koichi Yajima

发明人： Masateru Fukuoka ,  Yasuhiko Oyama ,  Munehiro Hatai ,  Satoshi Hayashi ,  Shigeru Danjo ,  Masahiko Kitamura ,  Koichi Yajima

IPC分类号： B24B37/04 ,  C09J5/08 ,  C09J7/02 ,  H01L21/301 ,  H01L21/304 ,  H01L21/44 ,  H01L21/46 ,  H01L21/48 ,  H01L21/68 ,  H01L21/78

CPC分类号： C09J5/08 ,  C09J7/38 ,  C09J2203/326 ,  C09J2205/102 ,  C09J2205/302 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/78 ,  H01L2221/68318 ,  H01L2221/68327

摘要： It is an object of the invention to provide a method for manufacturing an IC chip wherein a wafer is prevented from being damaged and the ease of handling thereof is improved so that the wafer can be appropriately processed into IC chips, even if a thickness of the wafer is extremely reduced to approximately 50 μm.The invention provides a method for manufacturing an IC chip comprising, at least: the step of securing a wafer to a support plate via a support tape having a surface layer comprising an adhesive (A) containing a gas generating agent for generating a gas due to stimulation and a surface layer comprising an adhesive (B); the step of polishing said wafer with securing said wafer to said support plate via said support tape; the step of adhering a dicing tape to said polished wafer; the step of providing said stimulation to said adhesive (A) layer; the step of removing said support tape from said wafer; and the step of dicing said wafer, which comprises adhering said surface layer comprising adhesive (A) to said wafer and adhering said surface layer comprising adhesive (B) to said support plate in the step of securing said wafer to said support plate via said support tape, providing said stimulation while uniformly sucking under reduced pressure the entirety of said wafer from the dicing tape side thereof, and then removing said support tape from said wafer in the step of providing stimulation to said adhesive (A) layer and in the step of removing said support tape from said wafer.

摘要翻译： 本发明的目的是提供一种制造IC芯片的方法，其中防止晶片损坏，并且其处理的便利性得到改善，使得晶片可以适当地加工成IC芯片，即使其厚度 晶片极大地减少到约50毫米。 本发明提供了一种制造IC芯片的方法，至少包括以下步骤：至少通过具有表面层的支撑带将晶片固定到支撑板的步骤，所述支撑带包括粘合剂（A），所述粘合剂（A）含有用于产生气体的气体发生剂， 刺激和包含粘合剂（B）的表面层; 通过所述支撑带将所述晶片固定到所述支撑板上来抛光所述晶片的步骤; 将切割带粘附到所述抛光晶片的步骤; 向所述粘合剂（A）层提供所述刺激的步骤; 从所述晶片去除所述支撑带的步骤; 以及切割所述晶片的步骤，其包括将包含粘合剂（A）的所述表面层粘附到所述晶片并且将包含粘合剂（B）的所述表面层粘附到所述支撑板上，在通过所述支撑件将所述晶片固定到所述支撑板的步骤中 提供所述刺激，同时在减压下均匀地从其切割带侧抽吸所述晶片的整体，然后在向所述粘合剂（A）层提供刺激的步骤中从所述晶片除去所述支撑带，并且在步骤 从所述晶片去除所述支撑带。