公开(公告)号：US06939741B2

公开(公告)日：2005-09-06

申请号：US10475257

申请日：2003-01-15

申请人： Masateru Fukuoka ,  Yasuhiko Oyama ,  Munehiro Hatai ,  Satoshi Hayashi ,  Shigeru Danjo ,  Masahiko Kitamura ,  Koichi Yajima

发明人： Masateru Fukuoka ,  Yasuhiko Oyama ,  Munehiro Hatai ,  Satoshi Hayashi ,  Shigeru Danjo ,  Masahiko Kitamura ,  Koichi Yajima

IPC分类号： B24B37/04 ,  C09J5/08 ,  C09J7/02 ,  H01L21/301 ,  H01L21/304 ,  H01L21/44 ,  H01L21/46 ,  H01L21/48 ,  H01L21/68 ,  H01L21/78

CPC分类号： C09J5/08 ,  C09J7/38 ,  C09J2203/326 ,  C09J2205/102 ,  C09J2205/302 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/78 ,  H01L2221/68318 ,  H01L2221/68327

摘要： It is an object of the invention to provide a method for manufacturing an IC chip wherein a wafer is prevented from being damaged and the ease of handling thereof is improved so that the wafer can be appropriately processed into IC chips, even if a thickness of the wafer is extremely reduced to approximately 50 μm.The invention provides a method for manufacturing an IC chip comprising, at least: the step of securing a wafer to a support plate via a support tape having a surface layer comprising an adhesive (A) containing a gas generating agent for generating a gas due to stimulation and a surface layer comprising an adhesive (B); the step of polishing said wafer with securing said wafer to said support plate via said support tape; the step of adhering a dicing tape to said polished wafer; the step of providing said stimulation to said adhesive (A) layer; the step of removing said support tape from said wafer; and the step of dicing said wafer, which comprises adhering said surface layer comprising adhesive (A) to said wafer and adhering said surface layer comprising adhesive (B) to said support plate in the step of securing said wafer to said support plate via said support tape, providing said stimulation while uniformly sucking under reduced pressure the entirety of said wafer from the dicing tape side thereof, and then removing said support tape from said wafer in the step of providing stimulation to said adhesive (A) layer and in the step of removing said support tape from said wafer.

摘要翻译： 本发明的目的是提供一种制造IC芯片的方法，其中防止晶片损坏，并且其处理的便利性得到改善，使得晶片可以适当地加工成IC芯片，即使其厚度 晶片极大地减少到约50毫米。 本发明提供了一种制造IC芯片的方法，至少包括以下步骤：至少通过具有表面层的支撑带将晶片固定到支撑板的步骤，所述支撑带包括粘合剂（A），所述粘合剂（A）含有用于产生气体的气体发生剂， 刺激和包含粘合剂（B）的表面层; 通过所述支撑带将所述晶片固定到所述支撑板上来抛光所述晶片的步骤; 将切割带粘附到所述抛光晶片的步骤; 向所述粘合剂（A）层提供所述刺激的步骤; 从所述晶片去除所述支撑带的步骤; 以及切割所述晶片的步骤，其包括将包含粘合剂（A）的所述表面层粘附到所述晶片并且将包含粘合剂（B）的所述表面层粘附到所述支撑板上，在通过所述支撑件将所述晶片固定到所述支撑板的步骤中 提供所述刺激，同时在减压下均匀地从其切割带侧抽吸所述晶片的整体，然后在向所述粘合剂（A）层提供刺激的步骤中从所述晶片除去所述支撑带，并且在步骤 从所述晶片去除所述支撑带。

公开(公告)号：US07335578B2

公开(公告)日：2008-02-26

申请号：US10490557

申请日：2003-04-09

申请人： Masateru Fukuoka ,  Munehiro Hatai ,  Satoshi Hayashi ,  Yasuhiko Oyama ,  Shigeru Danjo ,  Masahiko Kitamura ,  Koichi Yajima

发明人： Masateru Fukuoka ,  Munehiro Hatai ,  Satoshi Hayashi ,  Yasuhiko Oyama ,  Shigeru Danjo ,  Masahiko Kitamura ,  Koichi Yajima

IPC分类号： H01L21/00

CPC分类号： H01L21/6835 ,  B24B7/228 ,  B24B41/068 ,  H01L21/304 ,  H01L21/67092 ,  H01L21/67132 ,  H01L21/6836 ,  H01L21/78 ,  H01L2221/68327 ,  H01L2221/6834 ,  Y10S438/977

摘要： A semiconductor wafer (W) where circuits are formed in the area divided by streets is split into semiconductor chips having individual circuits. By interposing an adhesive sheet, whose adhesive force is lowered by stimulation, between the semiconductor wafer (W) and the support plate (13), the front side of the semiconductor wafer (W) is adhered to the support plate (13), thereby exposing the rear face (10) of the semiconductor wafer (W). The rear face (10) of the semiconductor wafer (W) with the support plate (13) is ground. After the grinding is finished, the semiconductor wafer (W) held with the rear face (10) up is diced into semiconductor chips (C). The adhesive sheet is given stimulus to lower the adhesive force and the semiconductor chips (C) are removed from the support plate (13). The semiconductor wafer and semiconductor chips are always supported by the support plate, avoiding damage and deformation.

摘要翻译： 在由街道划分的区域中形成电路的半导体晶片（W）被分成具有单独电路的半导体芯片。 通过在半导体晶片（W）和支撑板（13）之间插入粘合剂片（其粘合力被刺激而降低），半导体晶片（W）的前侧被粘附到支撑板（13），由此 暴露半导体晶片（W）的背面（10）。 研磨具有支撑板（13）的半导体晶片（W）的背面（10）。 研磨完成后，将保持有背面（10）的半导体晶片（W）切成半导体芯片（C）。 给予粘合片刺激以降低粘合力，并且将半导体芯片（C）从支撑板（13）移除。 半导体晶片和半导体芯片总是由支撑板支撑，避免损坏和变形。

公开(公告)号：US06852608B2

公开(公告)日：2005-02-08

申请号：US10250916

申请日：2002-11-15

申请人： Masahiko Kitamura ,  Koichi Yajima ,  Yusuke Kimura ,  Tomotaka Tabuchi

发明人： Masahiko Kitamura ,  Koichi Yajima ,  Yusuke Kimura ,  Tomotaka Tabuchi

IPC分类号： H01L21/00 ,  H01L21/301 ,  H01L21/304 ,  H01L21/44 ,  H01L21/68 ,  H01L21/78 ,  H01L21/784

CPC分类号： H01L21/67132 ,  H01L21/3043 ,  H01L21/78 ,  Y10S438/977

摘要： A semiconductor wafer is applied to a support disk via an intervening adhesive layer with the front side of the semiconductor wafer facing the adhesive layer, which is sensitive to a certain exterior factor for reducing its adhesive force; the semiconductor wafer is ground on the rear side; the wafer-and-support combination is applied to a dicing adhesive tape with the so ground rear side facing the dicing adhesive tape, which is surrounded and supported by the circumference by a dicing frame; the certain exterior factor is effected on the intervening adhesive layer to reduce its adhesive force; and the intervening adhesive layer and support disk are removed from the semiconductor wafer or chips without the possibility of damaging the same.

摘要翻译： 将半导体晶片通过中间粘合剂层施加到支撑盘上，其中半导体晶片的正面朝向粘合剂层，该粘合剂层对某一外部因素敏感以减小其粘附力; 半导体晶片在后侧被研磨; 将晶片和支撑组合应用于切割粘合带，其具有如此接地的后侧面向切割粘合带，该切割粘合带由切割架围绕并由圆周支撑; 某些外部因素在中间粘合剂层上实现，以降低其粘附力; 并且中间粘合剂层和支撑盘从半导体晶片或芯片移除，而不会损坏半导体晶片或芯片。

公开(公告)号：US07172950B2

公开(公告)日：2007-02-06

申请号：US10807276

申请日：2004-03-24

申请人： Kouji Takezoe ,  Akito Ichikawa ,  Koichi Tamura ,  Masahiko Kitamura ,  Koichi Yajima ,  Masatoshi Nanjo ,  Shinichi Namioka

发明人： Kouji Takezoe ,  Akito Ichikawa ,  Koichi Tamura ,  Masahiko Kitamura ,  Koichi Yajima ,  Masatoshi Nanjo ,  Shinichi Namioka

IPC分类号： H01L21/00

CPC分类号： H01L21/6835 ,  H01L21/6836 ,  H01L21/78 ,  H01L2221/68327 ,  H01L2221/6834

摘要： In manufacturing thinned semiconductor chips by grinding a semiconductor wafer supported on a rigid support substrate, in order to remove the semiconductor wafer or semiconductor chips from the support substrate without damage to the semiconductor wafer or semiconductor chips, a semiconductor wafer at its surface is bonded on a light-transmissive support substrate through an adhesive layer having an adhesion force that is reduced upon exposure to light radiation, thereby exposing the back surface of the semiconductor wafer. A tape is bonded to the backside of the semiconductor wafer integrated with the support substrate after grinding, wherein the tape is supported at the periphery. Before or after bonding of the tape, light radiation is applied to the adhesive layer at a side close to the support substrate to reduce the adhesion force in the adhesion layer. Thereafter, the support substrate and adhesive layer is removed from the surface of the semiconductor wafer, leaving the semiconductor wafer held by the tape and frame. The semiconductor wafer supported by the tape and frame is cut at streets into individual semiconductor chips.

摘要翻译： 在通过磨削支撑在刚性支撑衬底上的半导体晶片来制造薄化的半导体芯片中，为了从衬底基板移除半导体晶片或半导体芯片而不损坏半导体晶片或半导体芯片，其表面上的半导体晶片被接合在 通过具有粘附力的粘合剂层的透光性支撑基板，其在暴露于光辐射时减小，从而暴露半导体晶片的背面。 在研磨之后，将带粘合到与支撑基板一体化的半导体晶片的背面，其中带被支撑在周边。 在胶带粘合之前或之后，在靠近支撑基板的一侧将光辐射施加到粘合剂层，以降低粘合层中的粘附力。 此后，从半导体晶片的表面去除支撑基板和粘合剂层，使半导体晶片保持在带和框架上。 由胶带和框架支撑的半导体晶片在街道上被切割成单独的半导体芯片。

公开(公告)号：US06927416B2

公开(公告)日：2005-08-09

申请号：US10736685

申请日：2003-12-17

申请人： Kazuhisa Arai ,  Masatoshi Nanjo ,  Masahiko Kitamura ,  Shinichi Namioka ,  Koichi Yajima

发明人： Kazuhisa Arai ,  Masatoshi Nanjo ,  Masahiko Kitamura ,  Shinichi Namioka ,  Koichi Yajima

IPC分类号： H01L21/683 ,  H01L21/00 ,  H01L21/304 ,  H01L21/68 ,  H01L21/687 ,  H01L23/58 ,  H01L29/04

CPC分类号： H01L21/68757 ,  H01L21/67259 ,  H01L21/68 ,  H01L2223/54493

摘要： A wafer support plate comprises a support surface on which a semiconductor wafer is supported, and a crystal orientation mark which indicates the crystal orientation of the semiconductor wafer. Even the semiconductor wafer thinned by grinding can be stably held on the support surface, and the crystal orientation can be recognized even when the outer periphery of the semiconductor wafer has chipped.

摘要翻译： 晶片支撑板包括支撑半导体晶片的支撑表面和指示半导体晶片的晶体取向的晶体取向标记。 即使通过研磨而减薄的半导体晶片也能够稳定地保持在支撑面上，即使半导体晶片的外周已经发生切屑，也能够识别晶体取向。

公开(公告)号：US5595608A

公开(公告)日：1997-01-21

申请号：US333982

申请日：1994-11-02

申请人： Katashi Takebuchi ,  Shinya Fujito ,  Shinya Hashimoto ,  Koichi Yajima

发明人： Katashi Takebuchi ,  Shinya Fujito ,  Shinya Hashimoto ,  Koichi Yajima

IPC分类号： H01F1/057 ,  H01F1/03

CPC分类号： H01F1/0577

摘要： A permanent magnet which contains R, T and B as main ingredients wherein R is Y or a rare earth element and T is Fe or Fe and Co and has a primary phase of R.sub.2 T.sub.14 B is produced by compacting a mixture of 60 to 95 wt % of a primary phase-forming master alloy and a grain boundary phase-forming master alloy both in powder form and sintering the compact. The primary phase-forming master alloy has columnar crystal grains of R.sub.2 T.sub.14 B with a mean grain size of 3-50 .mu.m and grain boundaries of an R rich phase and contains 26-32 wt % of R. The grain boundary phase-forming master alloy is a crystalline alloy consisting essentially of 32-60 wt % of R and the balance of Co or Co and Fe. In anther form, a permanent magnet which contains R, T and B as main ingredients wherein R is yttrium or a rare earth element, T is Fe or Fe+Co/Ni and has a primary phase of R.sub.2 T.sub.14 B is produced by compacting a mixture of a primary phase-forming master alloy and a grain boundary-forming master alloy both in powder form and sintering the compact. The primary phase-forming master alloy has a primary phase of R.sub.2 T.sub.14 B and grain boundaries of an R rich phase. The grain boundary-forming master alloy contains 40-65 wt % of R, 30-60 wt % of Fe, Co or Ni and 1-12 wt % of Sn, In or Ga.

摘要翻译： 含有R，T和B作为主要成分的永磁体，其中R是Y或稀土元素，T是Fe或Fe和Co，并且具有R2T14B的初相是通过将60至95重量％的 主要成型母合金和晶界相成形母合金粉末形式并烧结成型。 主相成形母合金具有R2T14B的平均晶粒尺寸为3-50μm的柱状晶粒和富R相的晶界，并且含有26-32wt％的R。晶界相形成母合金 是基本上由32-60重量％的R和余量的Co或Co和Fe组成的结晶合金。 在花药形式中，含有R，T和B作为主要成分的永磁体，其中R是钇或稀土元素，T是Fe或Fe + Co / Ni，并且具有R2T14B的初相通过压制 主要成型母合金和晶界形成母合金，均为粉末形式并烧结成型。 主相成型母合金具有R2T14B的初相和富R相的晶界。 晶界形成母合金含有40-65重量％的R，30-60重量％的Fe，Co或Ni和1-12重量％的Sn，In或Ga。

公开(公告)号：US20050180727A1

公开(公告)日：2005-08-18

申请号：US11056778

申请日：2005-02-11

申请人： Koichi Yajima ,  Kazuhiko Ito

发明人： Koichi Yajima ,  Kazuhiko Ito

IPC分类号： H01R35/02 ,  G02B6/00

CPC分类号： H01R35/025

摘要： In the rotating connector wherein the rotor having the inner tube is rotatably coupled with the stator having the outer tube, and the flat cable is contained in the annular space defined between the outer tube and the inner tube, the cable winding direction is reversed at the intermediate section, and the intermediate reversing section of the flat cable is passed through the opening of the holder that is rotatably arranged in the annular space. A guiding wall having the outer surface eccentric to the rotating axis of the rotor is provided on the annular flat plate of the holder, and the flat cable is wound on the outer surface of the guiding wall in the wound-back state.

摘要翻译： 在具有内管的转子与具有外管的定子可旋转地连接的旋转连接器中，并且扁平电缆容纳在限定在外管和内管之间的环形空间中，电缆缠绕方向在 中间部分和扁平电缆的中间反转部分通过可旋转地布置在环形空间中的保持器的开口。 在保持器的环形平板上设置有具有偏心于转子的旋转轴线的外表面的导向壁，并且扁平电缆以卷绕状态卷绕在导向壁的外表面上。

公开(公告)号：US06982211B2

公开(公告)日：2006-01-03

申请号：US10999963

申请日：2004-12-01

申请人： Koichi Yajima ,  Satoshi Tateiwa ,  Kazuma Sekiya

发明人： Koichi Yajima ,  Satoshi Tateiwa ,  Kazuma Sekiya

IPC分类号： H01L21/301

CPC分类号： H01L21/67092 ,  H05K3/0044 ,  H05K3/0052

摘要： A water jet processing method for cutting a workpiece having a first group composed of first plural cutting lines extending in a predetermined direction and a second group composed of second plural cutting lines formed perpendicular to the plural cutting lines of the first group along the plural cutting lines of the first group and the plural cutting lines of the second group formed on the workpiece by injecting a water jet, which comprises a first cutting step for injecting a water jet to the cutting lines of the first group continuously and a second cutting step for injecting a water jet to the cutting lines of the second group continuously while the workpiece is supported by a support member.

摘要翻译： 一种用于切割具有第一组的工件的喷水处理方法，所述第一组由沿预定方向延伸的第一多个切割线组成，所述第二组沿着所述多个切割线垂直于所述第一组的多个切割线形成的第二多个切割线 和通过喷射水射流在工件上形成的多个切割线，其包括用于连续地向第一组的切割线喷射水射流的第一切割步骤和用于喷射的第二切割步骤 当工件被支撑构件支撑时，连续地向第二组的切割线进行水射流。

公开(公告)号：US6045629A

公开(公告)日：2000-04-04

申请号：US18050

申请日：1998-02-03

申请人： Hiroshi Hasegawa ,  Shiro Sasaki ,  Yoichi Hirose ,  Shinya Fujito ,  Koichi Yajima

发明人： Hiroshi Hasegawa ,  Shiro Sasaki ,  Yoichi Hirose ,  Shinya Fujito ,  Koichi Yajima

IPC分类号： B22D13/02 ,  B22D13/10 ,  B22F1/00 ,  C22C1/04 ,  C22C33/02 ,  C22C38/00 ,  H01F1/053 ,  H01F1/057 ,  H01F1/055

CPC分类号： C22C1/0441 ,  H01F1/057 ,  H01F1/0571 ,  B22F2009/041 ,  B22F2998/10 ,  B22F2999/00

摘要： An alloy used for the production of a rare-earth magnet alloy, particularly the boundary-phase alloy in the two-alloy method is provided to improve the crushability.The alloy consists of (a) from 35 to 60% of Nd, Dy and/or Pr, 1% or less of B, and the balance being Fe, or (b) from 35 to 60% of Nd, Dy and/or Pr, 1% or less of B, and at least one element selected from the group consisting of 35% by weight or less of Co, 4% by weight or less of Cu, 3% by weight or less of Al and 3% by weight or less of Ga, and the balance being Fe. The total volume fraction of R.sub.2 Fe.sub.17 and R.sub.2 Fe.sub.14 B phases (Fe may be replaced with Cu, Co, Al or Ga) is 25% or more in the alloy. The average size of each of the R.sub.2 Fe.sub.17 and R.sub.2 Fe.sub.14 B phases is 20 .mu.m or less. The alloy can be produced by a centrifugal casting at an average accumulating rate of melt at 0.1 cm/second or less.

摘要翻译： 提供了用于生产稀土类磁体合金的合金，特别是双合金方法中的边界相合金，以提高粉碎性。 该合金由（a）35〜60％的Nd，Dy和/或Pr，1％以下的B，余量为Fe，（b）35〜60％的Nd，Dy和/ Pr，1％以下的B，以及选自Co，35重量％以下的Co，4重量％以下的Cu，3重量％以下的Al和3重量％以下的至少一种元素， 重量或更少的Ga，余量为Fe。 在合金中，R2Fe17和R2Fe14B相（Fe可以用Cu，Co，Al或Ga代替）的总体积分数为25％以上。 R2Fe17和R2Fe14B相的平均尺寸为20μm以下。 该合金可以以0.1cm /秒以下的熔融物的平均累积速度通过离心铸造来制造。

公开(公告)号：US20090158585A1

公开(公告)日：2009-06-25

申请号：US12329198

申请日：2008-12-05

申请人： Koichi Yajima

发明人： Koichi Yajima

IPC分类号： H01R43/16

CPC分类号： H01R43/24 ,  H01R35/025 ,  H01R43/16 ,  Y10T29/49204 ,  Y10T29/49222

摘要： There is provided a method of manufacturing a lead block for a rotary connector. The rotary connector includes stationary and movable housings, a flexible cable, and lead blocks. The method includes forming a connection terminal connecting body, where connection terminals are connected to each other by connection parts, by performing blanking and bending on a metal plate, forming a base body made of an insulating resin by performing insert molding so that the connection terminal connecting body is embedded in the base body except for at least of the connection parts and first and second connection terminal portions, and making the connection terminals be electrically isolated from each other by removing predetermined portions of the connection parts. The second connection terminal portions of the connection terminals are arranged on parallel planes.

摘要翻译： 提供了一种制造用于旋转连接器的引导块的方法。 旋转连接器包括固定和可移动的壳体，柔性电缆和引线块。 该方法包括形成连接端子连接体，其中连接端子通过连接部分彼此连接，通过在金属板上进行消隐和弯曲，通过进行插入成型形成由绝缘树脂制成的基体，使得连接端子 连接体至少包括连接部分和第一和第二连接端子部分，并且通过除去连接部分的预定部分使得连接端子彼此电绝缘。 连接端子的第二连接端子部分布置在平行平面上。