公开(公告)号：US20120193323A1

公开(公告)日：2012-08-02

申请号：US13414953

申请日：2012-03-08

申请人： Yutaka KOKAZE ,  Masahisa Ueda ,  Yoshiaki Yoshida

发明人： Yutaka KOKAZE ,  Masahisa Ueda ,  Yoshiaki Yoshida

IPC分类号： H01B13/00 ,  B05C9/00 ,  B44C1/22

CPC分类号： H01J37/32449 ,  H01J37/3244 ,  H01L21/32136

摘要： A method for operating a substrate processing apparatus is provided which can contain generation of particles by generating plasma in a stable manner. After a substrate is disposed in an evacuated vacuum chamber, a rare gas is initially supplied into the vacuum chamber, a voltage is applied to a plasma generating means, and plasma of the rare gas is generated. Subsequently, a reaction gas is supplied into the vacuum chamber, the reaction gas is brought into contact with the plasma of the rare gas, and plasma of the reaction gas is generated. The plasma of the reaction gas is brought into contact with the substrate; and the substrate is processed. Plasma is stably generated not by turning the reaction gas into plasma but by first turning the rare gas into plasma by the plasma generating means, and generation of particles is subsequently suppressed.

摘要翻译： 提供了一种用于操作基板处理装置的方法，其可以通过以稳定的方式产生等离子体来包含颗粒的产生。 将基板设置在真空室内后，最初向真空室供给稀有气体，向等离子体发生装置施加电压，产生稀有气体的等离子体。 随后，将反应气体供给到真空室中，使反应气体与稀有气体的等离子体接触，产生反应气体的等离子体。 使反应气体的等离子体与基板接触; 并处理基板。 等离子体不是通过将反应气体转化为等离子体而是通过等离子体产生装置首先将稀有气体转化成等离子体而稳定地产生的，随后抑制了颗粒的产生。

公开(公告)号：US20120152889A1

公开(公告)日：2012-06-21

申请号：US13365652

申请日：2012-02-03

申请人： Masahisa Ueda ,  Yoshiaki Yoshida ,  Yutaka Kokaze

发明人： Masahisa Ueda ,  Yoshiaki Yoshida ,  Yutaka Kokaze

IPC分类号： H01L41/22

CPC分类号： H01L41/332

摘要： A method for manufacturing a piezoelectric element, in which a ferroelectric film is processed in an appropriate shape by plasma etching, is provided. A metal mask made of a metal thin film which is hard to be etched by oxygen gas is placed on an object to be processed formed by laminating a lower electrode layer and a ferroelectric film on a substrate in this order. An etching gas containing a mixture gas of the oxygen gas and a reactive gas including fluorine in a chemical structure is turned into plasma and is brought into contact with the metal mask and the object to be processed. An AC voltage is applied to an electrode disposed beneath the object to be processed so that ions in the plasma are caused to enter the object to be processed to perform anisotropic etching on the ferroelectric film.

摘要翻译： 提供了一种通过等离子体蚀刻将强电介质膜加工成适当形状的压电元件的制造方法。 将由氧气难以蚀刻的金属薄膜制成的金属掩模放置在通过在基板上依次层叠下电极层和铁电体膜而形成的被处理物体。 在化学结构中含有氧气和包含氟的反应性气体的混合气体的蚀刻气体变成等离子体，并与金属掩模和待处理物体接触。 将AC电压施加到设置在待处理物体下方的电极，使得等离子体中的离子进入被处理物体，以在铁电体膜上进行各向异性蚀刻。