公开(公告)号：US20120152889A1

公开(公告)日：2012-06-21

申请号：US13365652

申请日：2012-02-03

申请人： Masahisa Ueda ,  Yoshiaki Yoshida ,  Yutaka Kokaze

发明人： Masahisa Ueda ,  Yoshiaki Yoshida ,  Yutaka Kokaze

IPC分类号： H01L41/22

CPC分类号： H01L41/332

摘要： A method for manufacturing a piezoelectric element, in which a ferroelectric film is processed in an appropriate shape by plasma etching, is provided. A metal mask made of a metal thin film which is hard to be etched by oxygen gas is placed on an object to be processed formed by laminating a lower electrode layer and a ferroelectric film on a substrate in this order. An etching gas containing a mixture gas of the oxygen gas and a reactive gas including fluorine in a chemical structure is turned into plasma and is brought into contact with the metal mask and the object to be processed. An AC voltage is applied to an electrode disposed beneath the object to be processed so that ions in the plasma are caused to enter the object to be processed to perform anisotropic etching on the ferroelectric film.

摘要翻译： 提供了一种通过等离子体蚀刻将强电介质膜加工成适当形状的压电元件的制造方法。 将由氧气难以蚀刻的金属薄膜制成的金属掩模放置在通过在基板上依次层叠下电极层和铁电体膜而形成的被处理物体。 在化学结构中含有氧气和包含氟的反应性气体的混合气体的蚀刻气体变成等离子体，并与金属掩模和待处理物体接触。 将AC电压施加到设置在待处理物体下方的电极，使得等离子体中的离子进入被处理物体，以在铁电体膜上进行各向异性蚀刻。

公开(公告)号：US09305752B2

公开(公告)日：2016-04-05

申请号：US13414953

申请日：2012-03-08

申请人： Yutaka Kokaze ,  Masahisa Ueda ,  Yoshiaki Yoshida

发明人： Yutaka Kokaze ,  Masahisa Ueda ,  Yoshiaki Yoshida

IPC分类号： B44C1/22 ,  H01J37/32 ,  H01L21/3213

CPC分类号： H01J37/32449 ,  H01J37/3244 ,  H01L21/32136

摘要： A method for operating a substrate processing apparatus is provided which can contain generation of particles by generating plasma in a stable manner. After a substrate is disposed in an evacuated vacuum chamber, a rare gas is initially supplied into the vacuum chamber, a voltage is applied to a plasma generating means, and plasma of the rare gas is generated. Subsequently, a reaction gas is supplied into the vacuum chamber, the reaction gas is brought into contact with the plasma of the rare gas, and plasma of the reaction gas is generated. The plasma of the reaction gas is brought into contact with the substrate; and the substrate is processed. Plasma is stably generated not by turning the reaction gas into plasma but by first turning the rare gas into plasma by the plasma generating means, and generation of particles is subsequently suppressed.

摘要翻译： 提供了一种用于操作基板处理装置的方法，其可以通过以稳定的方式产生等离子体来包含颗粒的产生。 将基板设置在真空室内后，最初向真空室供给稀有气体，向等离子体发生装置施加电压，产生稀有气体的等离子体。 随后，将反应气体供给到真空室中，使反应气体与稀有气体的等离子体接触，产生反应气体的等离子体。 使反应气体的等离子体与基板接触; 并处理基板。 等离子体不是通过将反应气体转化为等离子体而是通过等离子体产生装置首先将稀有气体转化成等离子体而稳定地产生的，随后抑制了颗粒的产生。

公开(公告)号：US20100213170A1

公开(公告)日：2010-08-26

申请号：US12597602

申请日：2008-06-19

申请人： Yutaka Kokaze ,  Mitsuhiro Endou ,  Masahisa Ueda ,  Koukou Suu ,  Toshiya Miyazaki ,  Toshiyuki Nakamura

发明人： Yutaka Kokaze ,  Mitsuhiro Endou ,  Masahisa Ueda ,  Koukou Suu ,  Toshiya Miyazaki ,  Toshiyuki Nakamura

IPC分类号： C23F4/00

CPC分类号： H01L21/68735 ,  C23F4/00 ,  G11C11/22 ,  H01J37/321 ,  H01J37/32568 ,  H01J37/32642 ,  H01J37/3266 ,  H01J2237/022 ,  H01J2237/2001 ,  H01L21/31122 ,  H01L21/32136 ,  H01L21/67069 ,  H01L27/11507 ,  H01L27/1159

摘要： An etching method which uses an apparatus having a chamber in which an etching gas is excited by plasma; a table arranged in the chamber which heats a substrate mounted thereon; and a frame member which includes etching-endurable material which is arranged around the table, and which has an upper surface arranged at a position lower than an upper surface of the table, the etching method including: arranging the substrate on the upper surface of the table such that a peripheral part of the substrate projects above the table; and arranging the substrate such that a ratio of a height from the upper surface of the frame member to a bottom surface of the substrate and a projecting length from a side surface of the table to an outer circumference of the substrate is 1.5 or more

摘要翻译： 一种蚀刻方法，其使用具有其中蚀刻气体被等离子体激发的室的装置; 设置在所述室中的加热安装在其上的基板的台; 以及框架构件，其包括布置在工作台周围的耐腐蚀材料，并且具有布置在比工作台的上表面低的位置的上表面，所述蚀刻方法包括：将所述衬底布置在所述衬底的上表面上 使得基板的周边部分在工作台上方突出; 以及将所述基板从所述框架构件的上表面的高度与所述基板的底面的高度与从所述台的侧面到所述基板的外周的突出长度的比例设定为1.5以上

公开(公告)号：US08133325B2

公开(公告)日：2012-03-13

申请号：US12598081

申请日：2008-05-28

申请人： Masahisa Ueda ,  Yutaka Kokaze ,  Mitsuhiro Endou ,  Koukou Suu

发明人： Masahisa Ueda ,  Yutaka Kokaze ,  Mitsuhiro Endou ,  Koukou Suu

IPC分类号： C25F1/00

CPC分类号： H01J37/32091 ,  H01J37/321 ,  H01J37/32862 ,  Y10S428/905

摘要： This dry cleaning method for a plasma processing apparatus is a dry cleaning method for a plasma processing apparatus that includes: a vacuum container provided with a dielectric member; a planar electrode and a high-frequency antenna that are provided outside the dielectric member; and a high-frequency power source that supplies high-frequency power to both the high-frequency antenna and the planar electrode, to thereby introduce high-frequency power into the vacuum container via the dielectric member and produce an inductively-coupled plasma, the method comprising the steps of: introducing a gas including fluorine into the vacuum container and also introducing high-frequency power into the vacuum container from the high-frequency power source, to thereby produce an inductively-coupled plasma in the gas including fluorine; and by use of the inductively-coupled plasma, removing a product including at least one of a precious metal and a ferroelectric that is adhered to the dielectric member.

摘要翻译： 等离子体处理装置的干式清洗方法是等离子体处理装置的干式清洗方法，其特征在于，包括：设置有电介质部件的真空容器; 设置在电介质构件外部的平面电极和高频天线; 以及向高频天线和平面电极提供高频电力的高频电源，从而通过电介质构件将高频电力引入真空容器，并产生电感耦合等离子体，该方法 包括以下步骤：将包含氟的气体引入真空容器，并将高频电力从高频电源引入真空容器中，从而在包括氟的气体中产生电感耦合等离子体; 并且通过使用电感耦合等离子体，去除包括粘附到电介质构件的贵金属和铁电体中的至少一种的产品。

公开(公告)号：US20100151150A1

公开(公告)日：2010-06-17

申请号：US12600650

申请日：2008-05-14

申请人： Yutaka Kokaze ,  Masahisa Ueda ,  Mitsuhiro Endou ,  Koukou Suu ,  Toshiya Miyazaki ,  Genji Sakata ,  Toshiyuki Nakamura

发明人： Yutaka Kokaze ,  Masahisa Ueda ,  Mitsuhiro Endou ,  Koukou Suu ,  Toshiya Miyazaki ,  Genji Sakata ,  Toshiyuki Nakamura

IPC分类号： C23C16/513

CPC分类号： H01J37/32467 ,  H01J37/32009 ,  H01J37/321 ,  H01J37/32568

摘要： A plasma processing apparatus of the present invention performs on a substrate to be processed, plasma processing with a noble metal material and a ferroelectric material and is provided with a constituent member that is exposed to plasma while being heated. The constituent member is formed with an aluminum alloy of at least 99% aluminum purity.

摘要翻译： 本发明的等离子体处理装置对待处理的基板，用贵金属材料和铁电体材料的等离子体处理进行处理，并且在加热时设置有暴露于等离子体的构成部件。 该构成部件由至少99％的铝纯度的铝合金形成。

公开(公告)号：US20100083981A1

公开(公告)日：2010-04-08

申请号：US12598081

申请日：2008-05-28

申请人： Masahisa Ueda ,  Yutaka Kokaze ,  Mitsuhiro Endou ,  Koukou Suu

发明人： Masahisa Ueda ,  Yutaka Kokaze ,  Mitsuhiro Endou ,  Koukou Suu

IPC分类号： B08B6/00

CPC分类号： H01J37/32091 ,  H01J37/321 ,  H01J37/32862 ,  Y10S428/905

摘要： This dry cleaning method for a plasma processing apparatus is a dry cleaning method for a plasma processing apparatus that includes: a vacuum container provided with a dielectric member; a planar electrode and a high-frequency antenna that are provided outside the dielectric member; and a high-frequency power source that supplies high-frequency power to both the high-frequency antenna and the planar electrode, to thereby introduce high-frequency power into the vacuum container via the dielectric member and produce an inductively-coupled plasma, the method comprising the steps of: introducing a gas including fluorine into the vacuum container and also introducing high-frequency power into the vacuum container from the high-frequency power source, to thereby produce an inductively-coupled plasma in the gas including fluorine; and by use of the inductively-coupled plasma, removing a product including at least one of a precious metal and a ferroelectric that is adhered to the dielectric member.

摘要翻译： 等离子体处理装置的干式清洗方法是等离子体处理装置的干式清洗方法，其特征在于，包括：设置有电介质部件的真空容器; 设置在电介质构件外部的平面电极和高频天线; 以及向高频天线和平面电极提供高频电力的高频电源，从而通过电介质构件将高频电力引入真空容器，并产生电感耦合等离子体，该方法 包括以下步骤：将包含氟的气体引入真空容器，并将高频电力从高频电源引入真空容器中，从而在包括氟的气体中产生电感耦合等离子体; 并且通过使用电感耦合等离子体，去除包括粘附到电介质构件的贵金属和铁电体中的至少一种的产品。

公开(公告)号：US20080026539A1

公开(公告)日：2008-01-31

申请号：US11878172

申请日：2007-07-20

申请人： Yutaka Kokaze ,  Masahisa Ueda ,  Mitsuhiro Endo ,  Koukou Suu

发明人： Yutaka Kokaze ,  Masahisa Ueda ,  Mitsuhiro Endo ,  Koukou Suu

IPC分类号： H01L21/20

CPC分类号： H01L21/31138 ,  H01L21/31122 ,  H01L21/32136 ,  H01L21/32139 ,  H01L27/11502 ,  H01L27/11507 ,  H01L28/40

摘要： An etching technique suitable for miniaturization is provided. An inorganic film is formed on an object to be subjected, the object having a lower electrode film, a dielectric film, and an upper electrode film laminated in that order on a substrate. A patterned organic resist film is disposed on the surface of the inorganic film. The inorganic film, upper electrode film, and the dielectric film are etched using the organic resist film as a mask, and then, the organic resist film is removed with the gas used to etch the lower electrode film; and the lower electrode film is etched using the inorganic film as a mask that has been exposed. Since the film serving as a mask is not re-formed, a fine pattern can be produced with good precision.

摘要翻译： 提供适合于小型化的蚀刻技术。 在被处理物上形成无机膜，该物体在基板上依次层叠有下电极膜，电介质膜和上电极膜。 图案化的有机抗蚀剂膜设置在无机膜的表面上。 使用有机抗蚀剂膜作为掩模来蚀刻无机膜，上电极膜和电介质膜，然后用用于蚀刻下电极膜的气体去除有机抗蚀剂膜; 使用无机膜作为已曝光的掩模来蚀刻下部电极膜。 由于不会重新形成用作掩模的膜，因此可以以高精度制造精细图案。

公开(公告)号：US20130284701A1

公开(公告)日：2013-10-31

申请号：US13995846

申请日：2011-12-19

申请人： Yoshiaki Yoshida ,  Yutaka Kokaze

发明人： Yoshiaki Yoshida ,  Yutaka Kokaze

IPC分类号： H01B19/04

CPC分类号： H01B19/04 ,  G03F7/427 ,  H01L21/0206 ,  H01L21/02071 ,  H01L21/31122 ,  H01L21/31138 ,  H01L21/32136 ,  H01L28/55

摘要： [Object] To provide a method of manufacturing a dielectric device and an ashing method that are capable of suppressing the occurrence of resist residue.[Solving Means] In the ashing method, a base material having a surface etched by a plasma of chlorine gas or fluorocarbon gas via a resist mask (6) formed of an organic material is disposed in a chamber, bombardment treatment is performed on the resist mask (6) by using oxygen ions in the chamber, and the resist mask is removed by using oxygen radicals in the chamber. According to the ashing method described above, etching reactants adhering to the surface of the resist mask are physically removed by the bombardment treatment using oxygen ions. Thus, it is possible to suppress the occurrence of resist residue due to the etching reactants and efficiently remove the resist mask from the surface of the base material.

摘要翻译： 提供能够抑制抗蚀剂残留物的发生的制造电介质器件的方法和灰化方法。 [解决方案]在灰化方法中，通过由有机材料形成的抗蚀剂掩模（6）将具有由氯气等离子体或氟碳化合物气体蚀刻的表面的基材设置在室中，对抗蚀剂进行轰击处理 通过在室中使用氧离子来形成掩模（6），并且通过在室中使用氧自由基去除抗蚀剂掩模。 根据上述灰化方法，通过使用氧离子的轰击处理物理去除附着在抗蚀剂掩模表面上的蚀刻反应物。 因此，可以抑制由于蚀刻反应物引起的抗蚀剂残留的发生，并且有效地从基材的表面除去抗蚀剂掩模。