公开(公告)号：US20220352324A1

公开(公告)日：2022-11-03

申请号：US17867579

申请日：2022-07-18

Applicant: Micron Technology, Inc.

Inventor： Aaron Michael Lowe

IPC: H01L21/28 ,  H01L27/11502 ,  H01L27/108 ,  G11C11/22 ,  G11C5/06 ,  H01L29/78 ,  H01L27/06

Abstract: Some embodiments include an integrated transistor having an active region comprising semiconductor material. The active region includes a first source/drain region, a second source/drain region and a channel region between the first and second source/drain regions. A conductive gating structure is operatively proximate the channel region and comprises molybdenum. The integrated transistor may be incorporated into integrated memory, such as, for example, DRAM, FeFET memory, etc. Some embodiments include methods of forming integrated assemblies and devices, such as, for example, integrated transistors, integrated memory, etc.

公开(公告)号：US20220059693A1

公开(公告)日：2022-02-24

申请号：US16998877

申请日：2020-08-20

Applicant: Micron Technology, Inc.

Inventor： Yoshitaka Nakamura ,  Yi Fang Lee ,  Jerome A. Imonigie ,  Scott E. Sills ,  Aaron Michael Lowe

IPC: H01L29/78 ,  H01L29/45 ,  H01L29/417 ,  H01L29/10 ,  H01L29/08 ,  H01L29/24 ,  H01L27/108

Abstract: Some embodiments include an integrated assembly having an access device between a storage element and a conductive structure. The access device has channel material which includes semiconductor material. The channel material has a first end and an opposing second end, and has a side extending from the first end to the second end. The first end is adjacent the conductive structure, and the second end is adjacent the storage element. Conductive gate material is adjacent the side of the channel material. A first domed metal-containing cap is over the conductive structure and under the channel material and/or a second domed metal-containing cap is over the channel material and under the storage element. Some embodiments include methods of forming integrated assemblies.

公开(公告)号：US20220037483A1

公开(公告)日：2022-02-03

申请号：US16940852

申请日：2020-07-28

Applicant: Micron Technology, Inc.

Inventor： Aaron Michael Lowe

IPC: H01L21/28 ,  H01L27/11502 ,  H01L27/108 ,  H01L27/06 ,  G11C5/06 ,  G11C11/22 ,  H01L29/78

Abstract: Some embodiments include an integrated transistor having an active region comprising semiconductor material. The active region includes a first source/drain region, a second source/drain region and a channel region between the first and second source/drain regions. A conductive gating structure is operatively proximate the channel region and comprises molybdenum. The integrated transistor may be incorporated into integrated memory, such as, for example, DRAM, FeFET memory, etc. Some embodiments include methods of forming integrated assemblies and devices, such as, for example, integrated transistors, integrated memory, etc.