公开(公告)号：US11121317B2

公开(公告)日：2021-09-14

申请号：US16684520

申请日：2019-11-14

Applicant: Micron Technology, Inc.

Inventor： Rajasekhar Venigalla ,  Patrick M. Flynn ,  Josiah Jebaraj Johnley Muthuraj ,  Efe Sinan Ege ,  Kevin Lee Baker ,  Tao Nguyen ,  Davis Weymann

IPC: H01L45/00 ,  H01L21/768 ,  H01L23/522 ,  H01L27/24 ,  G11C13/00 ,  H01L23/528

Abstract: Methods, systems, and devices for a low resistance crosspoint architecture are described. A manufacturing system may deposit a thermal barrier material, followed by a first layer of a first conductive material, on a layered assembly including a patterned layer of electrode materials and a patterned layer of a memory material. The manufacturing system may etch a first area of the layered assembly to form a gap in the first layer of the first conductive material, the thermal barrier material, the patterned layer of the memory material, and the patterned layer of electrode materials. The manufacturing system may deposit a second conductive material to form a conductive via in the gap, where the conductive via extends to a height within the layered assembly that is above the thermal barrier material.

公开(公告)号：US20210151675A1

公开(公告)日：2021-05-20

申请号：US16684520

申请日：2019-11-14

Applicant: Micron Technology, Inc.

Inventor： Rajasekhar Venigalla ,  Patrick M. Flynn ,  Josiah Jebaraj Johnley Muthuraj ,  Efe Sinan Ege ,  Kevin Lee Baker ,  Tao Nguyen ,  Davis Weymann

IPC: H01L45/00 ,  H01L21/768 ,  H01L23/522 ,  H01L27/24 ,  G11C13/00 ,  H01L23/528

Abstract: Methods, systems, and devices for a low resistance crosspoint architecture are described. A manufacturing system may deposit a thermal barrier material, followed by a first layer of a first conductive material, on a layered assembly including a patterned layer of electrode materials and a patterned layer of a memory material. The manufacturing system may etch a first area of the layered assembly to form a gap in the first layer of the first conductive material, the thermal barrier material, the patterned layer of the memory material, and the patterned layer of electrode materials. The manufacturing system may deposit a second conductive material to form a conductive via in the gap, where the conductive via extends to a height within the layered assembly that is above the thermal barrier material.