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公开(公告)号：US20240224825A1
公开(公告)日：2024-07-04
申请号：US18409413
申请日：2024-01-10
发明人： Rajasekhar Venigalla , Patrick M. Flynn , Josiah Jebaraj Johnley Muthuraj , Efe Sinan Ege , Kevin Lee Baker , Tao Nguyen , Davis Weymann
IPC分类号： H10N70/00 , G11C13/00 , H01L21/768 , H01L23/522 , H01L23/528 , H10B63/00 , H10N70/20
CPC分类号： H10N70/8616 , G11C13/0004 , H01L21/76802 , H01L21/76831 , H01L21/76834 , H01L21/76843 , H01L21/76877 , H01L23/5226 , H01L23/528 , H10B63/84 , H10N70/021 , H10N70/231 , H10N70/826 , H10N70/841 , G11C13/004 , G11C2013/005 , G11C13/0069 , G11C2013/0078 , G11C2213/52 , G11C2213/71 , H10N70/8825
摘要： Methods, systems, and devices for a low resistance crosspoint architecture are described. A manufacturing system may deposit a thermal barrier material, followed by a first layer of a first conductive material, on a layered assembly including a patterned layer of electrode materials and a patterned layer of a memory material. The manufacturing system may etch a first area of the layered assembly to form a gap in the first layer of the first conductive material, the thermal barrier material, the patterned layer of the memory material, and the patterned layer of electrode materials. The manufacturing system may deposit a second conductive material to form a conductive via in the gap, where the conductive via extends to a height within the layered assembly that is above the thermal barrier material.
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公开(公告)号：US11882774B2
公开(公告)日：2024-01-23
申请号：US17468167
申请日：2021-09-07
发明人： Rajasekhar Venigalla , Patrick M. Flynn , Josiah Jebaraj Johnley Muthuraj , Efe Sinan Ege , Kevin Lee Baker , Tao Nguyen , Davis Weymann
IPC分类号： H10N70/00 , H01L21/768 , H01L23/522 , G11C13/00 , H01L23/528 , H10B63/00 , H10N70/20
CPC分类号： H10N70/8616 , G11C13/0004 , H01L21/76802 , H01L21/76831 , H01L21/76834 , H01L21/76843 , H01L21/76877 , H01L23/528 , H01L23/5226 , H10B63/84 , H10N70/021 , H10N70/231 , H10N70/826 , H10N70/841 , G11C13/004 , G11C13/0069 , G11C2013/005 , G11C2013/0078 , G11C2213/52 , G11C2213/71 , H10N70/8825
摘要： Methods, systems, and devices for a low resistance crosspoint architecture are described. A manufacturing system may deposit a thermal barrier material, followed by a first layer of a first conductive material, on a layered assembly including a patterned layer of electrode materials and a patterned layer of a memory material. The manufacturing system may etch a first area of the layered assembly to form a gap in the first layer of the first conductive material, the thermal barrier material, the patterned layer of the memory material, and the patterned layer of electrode materials. The manufacturing system may deposit a second conductive material to form a conductive via in the gap, where the conductive via extends to a height within the layered assembly that is above the thermal barrier material.
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公开(公告)号：US20220069216A1
公开(公告)日：2022-03-03
申请号：US17468167
申请日：2021-09-07
发明人： Rajasekhar Venigalla , Patrick M. Flynn , Josiah Jebaraj Johnley Muthuraj , Efe Sinan Ege , Kevin Lee Baker , Tao Nguyen , Davis Weymann
IPC分类号： H01L45/00 , H01L21/768 , H01L23/522 , H01L27/24 , G11C13/00 , H01L23/528
摘要： Methods, systems, and devices for a low resistance crosspoint architecture are described. A manufacturing system may deposit a thermal barrier material, followed by a first layer of a first conductive material, on a layered assembly including a patterned layer of electrode materials and a patterned layer of a memory material. The manufacturing system may etch a first area of the layered assembly to form a gap in the first layer of the first conductive material, the thermal barrier material, the patterned layer of the memory material, and the patterned layer of electrode materials. The manufacturing system may deposit a second conductive material to form a conductive via in the gap, where the conductive via extends to a height within the layered assembly that is above the thermal barrier material.
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公开(公告)号：US11121317B2
公开(公告)日：2021-09-14
申请号：US16684520
申请日：2019-11-14
发明人： Rajasekhar Venigalla , Patrick M. Flynn , Josiah Jebaraj Johnley Muthuraj , Efe Sinan Ege , Kevin Lee Baker , Tao Nguyen , Davis Weymann
IPC分类号： H01L45/00 , H01L21/768 , H01L23/522 , H01L27/24 , G11C13/00 , H01L23/528
摘要： Methods, systems, and devices for a low resistance crosspoint architecture are described. A manufacturing system may deposit a thermal barrier material, followed by a first layer of a first conductive material, on a layered assembly including a patterned layer of electrode materials and a patterned layer of a memory material. The manufacturing system may etch a first area of the layered assembly to form a gap in the first layer of the first conductive material, the thermal barrier material, the patterned layer of the memory material, and the patterned layer of electrode materials. The manufacturing system may deposit a second conductive material to form a conductive via in the gap, where the conductive via extends to a height within the layered assembly that is above the thermal barrier material.
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公开(公告)号：US20210151675A1
公开(公告)日：2021-05-20
申请号：US16684520
申请日：2019-11-14
发明人： Rajasekhar Venigalla , Patrick M. Flynn , Josiah Jebaraj Johnley Muthuraj , Efe Sinan Ege , Kevin Lee Baker , Tao Nguyen , Davis Weymann
IPC分类号： H01L45/00 , H01L21/768 , H01L23/522 , H01L27/24 , G11C13/00 , H01L23/528
摘要： Methods, systems, and devices for a low resistance crosspoint architecture are described. A manufacturing system may deposit a thermal barrier material, followed by a first layer of a first conductive material, on a layered assembly including a patterned layer of electrode materials and a patterned layer of a memory material. The manufacturing system may etch a first area of the layered assembly to form a gap in the first layer of the first conductive material, the thermal barrier material, the patterned layer of the memory material, and the patterned layer of electrode materials. The manufacturing system may deposit a second conductive material to form a conductive via in the gap, where the conductive via extends to a height within the layered assembly that is above the thermal barrier material.
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