公开(公告)号：US12274060B2

公开(公告)日：2025-04-08

申请号：US17390415

申请日：2021-07-30

Applicant: Micron Technology, Inc.

Inventor： Kyubong Jung ,  Terry H. Kim

IPC: H10B43/27

Abstract: Some embodiments include an integrated assembly having a stack of alternating insulative levels and conductive levels. A pillar of channel material extends through the stack. Charge-storage-material-segments are adjacent to the conductive levels of the stack, and are between the channel material and the conductive levels. The charge-storage-material-segments contain one or more high-k oxides. At least a portion of each of the charge-storage-material-segments is vertically wider than the conductive levels. Some embodiments include methods of forming integrated assemblies.

公开(公告)号：US12261210B2

公开(公告)日：2025-03-25

申请号：US17176444

申请日：2021-02-16

Applicant: Micron Technology, Inc.

Inventor： Manzar Siddik ,  Terry H. Kim ,  Kyubong Jung

IPC: H01L29/51 ,  H01L21/28 ,  H01L29/423 ,  H10B43/27

Abstract: A method of forming an electronic device comprising forming an initial dielectric material comprising silicon-hydrogen bonds. A deuterium source gas and an oxygen source gas are reacted to produce deuterium species, and the initial dielectric material is exposed to the deuterium species. Deuterium of the deuterium species is incorporated into the initial dielectric material to form a deuterium-containing dielectric material. Additional methods are also disclosed, as are electronic devices and systems comprising the deuterium-containing dielectric material.

公开(公告)号：US20230037066A1

公开(公告)日：2023-02-02

申请号：US17390415

申请日：2021-07-30

Applicant: Micron Technology, Inc.

Inventor： Kyubong Jung ,  Terry H. Kim

IPC: H01L27/11582

Abstract: Some embodiments include an integrated assembly having a stack of alternating insulative levels and conductive levels. A pillar of channel material extends through the stack. Charge-storage-material-segments are adjacent to the conductive levels of the stack, and are between the channel material and the conductive levels. The charge-storage-material-segments contain one or more high-k oxides. At least a portion of each of the charge-storage-material-segments is vertically wider than the conductive levels. Some embodiments include methods of forming integrated assemblies.

公开(公告)号：US20210175247A1

公开(公告)日：2021-06-10

申请号：US16705388

申请日：2019-12-06

Applicant: Micron Technology, Inc.

Inventor： Manzar Siddik ,  Chris M. Carlson ,  Terry H. Kim ,  Kunal Shrotri ,  Srinath Venkatesan

IPC: H01L27/11582 ,  H01L27/11556 ,  H01L21/3115 ,  H01L21/3215

Abstract: A memory array comprising strings of memory cells comprises a vertical stack comprising alternating insulative tiers and conductive tiers. The strings of memory cells in the stack comprise channel-material strings and storage-material strings extending through the insulative tiers and the conductive tiers. At least some of the storage material of the storage-material strings in individual of the insulative tiers are intrinsically less charge-transmissive than is the storage material in the storage-material strings in individual of the conductive tiers. Other aspects, including method, are disclosed.