公开(公告)号：US20080029793A1

公开(公告)日：2008-02-07

申请号：US11774270

申请日：2007-07-06

申请人： Takanori Watanabe ,  Tetsuya Itano ,  Hidekazu Takahashi ,  Shunsuke Takimoto ,  Kotaro Abukawa ,  Hiroaki Naruse ,  Shigeru Nishimura ,  Masatsugu Itahashi

发明人： Takanori Watanabe ,  Tetsuya Itano ,  Hidekazu Takahashi ,  Shunsuke Takimoto ,  Kotaro Abukawa ,  Hiroaki Naruse ,  Shigeru Nishimura ,  Masatsugu Itahashi

IPC分类号： H01L31/0232

CPC分类号： H01L27/14616 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/14689

摘要： A photoelectric conversion device includes a photoelectric conversion region having a plurality of photoelectric conversion elements and a first MOS transistor configured to read a signal in response to an electric charge of each photoelectric conversion element; and a peripheral circuit region having a second MOS transistor configured to drive the first MOS transistor and/or amplify the signal read from the photoelectric conversion region, the photoelectric conversion region and the peripheral circuit region being located on the same semiconductor substrate, wherein an impurity concentration in a drain of the first MOS transistor is lower than an impurity concentration in a drain of the second MOS transistor.

摘要翻译： 光电转换装置包括具有多个光电转换元件的光电转换区域和被配置为响应每个光电转换元件的电荷读取信号的第一MOS晶体管; 以及具有第二MOS晶体管的外围电路区域，被配置为驱动第一MOS晶体管和/或放大从光电转换区域读取的信号，光电转换区域和外围电路区域位于同一半导体衬底上，其中杂质 第一MOS晶体管的漏极中的浓度低于第二MOS晶体管的漏极中的杂质浓度。