公开(公告)号：US08095272B2

公开(公告)日：2012-01-10

申请号：US11901709

申请日：2007-09-18

Applicant: Kazuasa Suzuki ,  Minoru Higuchi ,  Yasuji Shibahata

Inventor： Kazuasa Suzuki ,  Minoru Higuchi ,  Yasuji Shibahata

IPC: A01B69/00

CPC classification number: B62D15/00 ,  B60T7/042 ,  B60T8/1755 ,  B60T2260/022 ,  B60T2260/06 ,  B60W30/045 ,  B62D1/046 ,  B62D1/06 ,  G05G1/44 ,  G05G1/483

Abstract: A rotatable grip (ancillary operation member) is provided on a part of a steering wheel body of a steering wheel (main operation member) for turning wheels. When the grip is rotated, a difference is generated between left and right wheels, and a yaw moment generated with this difference can assist or suppress the turning of a vehicle. Because the grip constitutes a part of the steering wheel body, it is possible to rotate the grip to assist or suppress the turning of the vehicle, while operating the steering wheel to turn the vehicle. Because both the steering wheel body and the grip can be operated by the same hand of a driver, operational burden on the driver is alleviated. Thus, it is possible to concurrently provide an excellent operability of the main operation member for controlling a kinetic state of the vehicle, and an excellent operability of the ancillary operation member for controlling the operation of a yaw moment generating device.

Abstract translation: 在转向轮的方向盘（主操作构件）的方向盘主体的一部分上设置有可旋转的手柄（辅助操作构件）。 当把手旋转时，在左右轮之间产生差异，并且由此产生的横摆力矩可以帮助或抑制车辆的转弯。 由于把手构成方向盘主体的一部分，所以能够旋转手柄以辅助或抑制车辆的转动，同时操作方向盘以转动车辆。 因为方向盘主体和把手可以通过驾驶员的同一只手操作，所以可以减轻驾驶员的操作负担。 因此，可以同时提供用于控制车辆的动态的主操作构件的优异的可操作性，以及用于控制横摆力矩发生装置的操作的辅助操作构件的优异的可操作性。

公开(公告)号：US07615781B2

公开(公告)日：2009-11-10

申请号：US11633502

申请日：2006-12-05

Applicant: Minoru Higuchi

Inventor： Minoru Higuchi

IPC: H01L23/58

CPC classification number: H01L22/34 ,  H01L23/5228 ,  H01L2223/5446 ,  H01L2924/0002 ,  H01L2924/00

Abstract: There is a room for improvement in conventional semiconductor devices in terms of reducing the chip area. A semiconductor device 1 comprises an evaluation transistor 10 (first characteristic evaluation device), an evaluation transistor (second characteristic evaluation device), measurement pads 30 (first measurement pads) and measurement pads 40 (second measurement pads). The measurement pad 30 and the measurement pad 40 are provided in different layers in the interconnect layer.

Abstract translation: 在减少芯片面积方面，在常规半导体器件中有改进的余地。 半导体器件1包括评估晶体管10（第一特性评估器件），评估晶体管（第二特性评估器件），测量焊盘30（第一测量焊盘）和测量焊盘40（第二测量焊盘）。 测量垫30和测量垫40在互连层中设置在不同的层中。

公开(公告)号：US06376331B1

公开(公告)日：2002-04-23

申请号：US09669896

申请日：2000-09-27

Applicant: Minoru Higuchi

Inventor： Minoru Higuchi

IPC: H01L2176

CPC classification number: H01L21/76205 ,  H01L21/76213

Abstract: A semiconductor device is herein disclosed which comprises a plurality of element regions formed on a first conductive type semiconductor substrate, element isolation regions for isolating the element regions from each other, and gate electrodes on parts of the element regions, the element regions being in contact with the element isolation regions at side surfaces of the element regions, wherein in the element region under each gate electrode, the concentration of a first conductive type impurity is high in an element region top surface edge area (in the vicinity of 66), and on the side surfaces of each element region, except the portions under the gate electrode, the concentration of the first conductive type impurity is equal to or lower than that of the first conductive type impurity in the body of the element region. According to the present invention, in the semiconductor device having a trench isolation, the formation of a parasitic channel at element region top surface edges under a gate electrode can be prevented and a leak current in an OFF state can be reduced without any increase in a junction capacitance which retards the driving velocity of elements and without any increase in a junction leak current.

Abstract translation: 本文公开了一种半导体器件，其包括形成在第一导电类型半导体衬底上的多个元件区域，用于将元件区域彼此隔离的元件隔离区域和元件区域的部分上的栅电极，元件区域接触 在元件区域的侧面的元件隔离区域中，在元件区域顶面边缘区域（66附近），在各栅电极下的元件区域中，第一导电型杂质的浓度高， 除了栅极电极以外的各部分的侧面，第一导电型杂质的浓度等于或低于元件区域的第一导电型杂质的浓度。 根据本发明，在具有沟槽隔离的半导体器件中，可以防止在栅电极下面的元件区顶部表面边缘处形成寄生沟道，并且可以减小在OFF状态下的漏电流，而不会增加 结电容，其延迟元件的驱动速度并且没有任何增加的结漏电流。

公开(公告)号：US06309515B1

公开(公告)日：2001-10-30

申请号：US09181649

申请日：1998-10-29

Applicant: Ken Inoue ,  Hitoshi Abiko ,  Minoru Higuchi

Inventor： Ken Inoue ,  Hitoshi Abiko ,  Minoru Higuchi

IPC: C23C1434

CPC classification number: H01J37/3447 ,  C23C14/35 ,  H01L21/28518 ,  H01L21/2855

Abstract: There is provided a method for manufacturing a semiconductor device for forming a silicide layer of metal of high melting point, wherein the metal of high melting point is processed in sputtering under a condition in which no deterioration is produced by the sputtering apparatus. There is also provided a sputtering apparatus for manufacturing semiconductor device. In the method of the present invention, a high melting point metal is accumulated on a silicon substrate formed with a gate electrode of a semiconductor element to form a metallic film of high melting point, thereafter it is heat treated to form a silicide layer of the high melting point metal at an interface layer with the metallic film with high melting point, and in this case, the metallic film of high melting point is accumulated in sputtering by a magnetron sputtering device under a condition in which an electrical load amount Q reaching to the gate electrode is less than 5 C/cm2. In addition, the sputtering apparatus 30 has the collimator plate 32 including an electrical conductive material having many through-pass holes passed from the target toward the wafer between the target holder 16 and the wafer holder 14 while it is being connected to an earth terminal.

Abstract translation: 提供一种制造用于形成高熔点金属的硅化物层的半导体器件的方法，其中在溅射装置不产生劣化的条件下，溅射中处理高熔点金属。 还提供了一种用于制造半导体器件的溅射装置。 在本发明的方法中，在形成有半导体元件的栅电极的硅衬底上积聚高熔点金属，形成高熔点金属膜，然后进行热处理，形成硅化物层 在与熔点高的金属膜的界面层处的高熔点金属，在这种情况下，通过磁控溅射装置在溅射中积聚高熔点的金属膜，在电负载量Q达到 栅电极小于5℃/ cm 2。 此外，溅射装置30具有准直器板32，该准直板32具有导电材料，该导电材料具有许多穿过孔，当目标保持器16和晶片保持器14被连接到接地端子时，其具有从目标物朝向晶片传递的晶片。

公开(公告)号：US06281094B1

公开(公告)日：2001-08-28

申请号：US09082186

申请日：1998-05-21

Applicant: Hitoshi Abiko ,  Minoru Higuchi

Inventor： Hitoshi Abiko ,  Minoru Higuchi

IPC: H01L21331

CPC classification number: H01L21/823878 ,  H01L21/26586 ,  H01L21/76237

Abstract: In a method of fabricating a semiconductor device by the use of a semiconductor substrate (1), boron ions (4) are implanted into the semiconductor substrate from a trench (3) which is formed to the semiconductor substrate. The trench is defined by a plurality of side surfaces and a bottom surface extending between the side surfaces. The boron ions are implanted through all of the side surfaces and the bottom surface. It is preferable that isolating material is filled into the trench to produce a trench isolation extending over a p-well (7) and a n-well (8).

Abstract translation: 在通过使用半导体衬底（1）制造半导体器件的方法中，从形成于半导体衬底的沟槽（3）将硼离子（4）注入到半导体衬底中。 沟槽由多个侧表面和在侧表面之间延伸的底表面限定。 硼离子通过所有侧表面和底表面注入。 优选地，将隔离材料填充到沟槽中以产生在p阱（7）和n阱（8）上延伸的沟槽隔离。

公开(公告)号：US4090619A

公开(公告)日：1978-05-23

申请号：US713220

申请日：1976-08-10

Applicant: Minoru Higuchi ,  Tetuo Yamagata

Inventor： Minoru Higuchi ,  Tetuo Yamagata

IPC: B65G65/06 ,  B65G65/38

CPC classification number: B65G65/06

Abstract: A machine for scraping up grit which has a girder extending over grit chambers, an elevating frame parallel with the girder and adapted to rise and descend, a bucket conveyor stretched around sprocket wheels arranged at both ends of the elevating frame and at proper places above the girder, and a movable sprocket wheel, whereby scraping, scooping up and discharging of grit can be performed by the bucket conveyor.

Abstract translation: 一种用于刮擦砂粒的机器，其具有延伸在砂粒室上的梁，与该梁平行并适于上升和下降的升降框架;布置在升降框架两端的链轮周围的铲斗输送机， 大梁和可动链轮，由铲斗式输送机进行砂轮的刮除，铲起和卸料。