Abstract:
A control device of a variable damping force damper for controlling a damping force of a damper used in a vehicle suspension system comprises: relative displacement detection means for detecting a value corresponding to a relative displacement between a vehicle body and a wheel in a vertical direction; relative speed detection means for detecting a value corresponding to a relative speed between the vehicle body and the wheel in the vertical direction; multiplying means for multiplying the value corresponding to the relative displacement and the value corresponding to the relative speed; and means for setting a damping force control target value of the damper based on the output from the multiplying means.
Abstract:
This invention provides a photovoltaic module for preventing insulation failure between an outer frame and connection leads. The photovoltaic module comprises: a photovoltaic submodule including a plurality of solar cells interposed between two light-transmitting substrates through the intermediary of an encapsulant and the connection leads extending from an edge between light-transmitting substrates and outputting generated electric currents; a terminal box attached near an edge of the photovoltaic submodule and housing connected parts between the connection leads and cables for outputting the electric currents to the outside; and an outer frame fitting over peripheral edges of the photovoltaic submodule. A side, of the light-receiving side light-transmitting substrate, from which the connection leads are pulled out, is made large so as to extend outward further than the other light-transmitting substrate. The connection leads are led out from the edge between the two light-transmitting substrates to be guided into the terminal box.
Abstract:
A control device of a variable damping force damper for controlling a damping force of a damper used in a vehicle suspension system comprises: relative displacement detection means for detecting a value corresponding to a relative displacement between a vehicle body and a wheel in a vertical direction; relative speed detection means for detecting a value corresponding to a relative speed between the vehicle body and the wheel in the vertical direction; multiplying means for multiplying the value corresponding to the relative displacement and the value corresponding to the relative speed; and means for setting a damping force control target value of the damper based on the output from the multiplying means.
Abstract:
A display device provided with a screen, comprising: an optical filter having a blind sheet that comprises a plurality of semitranslucent layers having translucence arranged side-by-side extending in a horizontal direction and having a predetermined thickness in a vertical direction, and a plurality of transparent layers which are disposed between the semitranslucent layers and which are of a higher translucency than that of the semitranslucent layers and of a greater thickness than the thickness of the semitranslucent layers; and an adhesive member for sticking the optical filter to the screen, wherein the ratio of the transmittance of a limit angle of the screen with respect to the transmittance of the optical filter at the center of the screen is at least 0.10 and not more than 0.50.
Abstract:
This invention provides a photovoltaic module for preventing insulation failure between an outer frame and connection leads. The photovoltaic module comprises: a photovoltaic submodule including a plurality of solar cells interposed between two light-transmitting substrates through the intermediary of an encapsulant and the connection leads extending from an edge between light-transmitting substrates and outputting generated electric currents; a terminal box attached near an edge of the photovoltaic submodule and housing connected parts between the connection leads and cables for outputting the electric currents to the outside; and an outer frame fitting over peripheral edges of the photovoltaic submodule. A side, of the light-receiving side light-transmitting substrate, from which the connection leads are pulled out, is made large so as to extend outward further than the other light-transmitting substrate. The connection leads are led out from the edge between the two light-transmitting substrates to be guided into the terminal box.
Abstract:
A rotatable grip (ancillary operation member) is provided on a part of a steering wheel body of a steering wheel (main operation member) for turning wheels. When the grip is rotated, a difference is generated between left and right wheels, and a yaw moment generated with this difference can assist or suppress the turning of a vehicle. Because the grip constitutes a part of the steering wheel body, it is possible to rotate the grip to assist or suppress the turning of the vehicle, while operating the steering wheel to turn the vehicle. Because both the steering wheel body and the grip can be operated by the same hand of a driver, operational burden on the driver is alleviated. Thus, it is possible to concurrently provide an excellent operability of the main operation member for controlling a kinetic state of the vehicle, and an excellent operability of the ancillary operation member for controlling the operation of a yaw moment generating device.
Abstract:
There is a room for improvement in conventional semiconductor devices in terms of reducing the chip area. A semiconductor device 1 comprises an evaluation transistor 10 (first characteristic evaluation device), an evaluation transistor (second characteristic evaluation device), measurement pads 30 (first measurement pads) and measurement pads 40 (second measurement pads). The measurement pad 30 and the measurement pad 40 are provided in different layers in the interconnect layer.
Abstract:
A semiconductor device is herein disclosed which comprises a plurality of element regions formed on a first conductive type semiconductor substrate, element isolation regions for isolating the element regions from each other, and gate electrodes on parts of the element regions, the element regions being in contact with the element isolation regions at side surfaces of the element regions, wherein in the element region under each gate electrode, the concentration of a first conductive type impurity is high in an element region top surface edge area (in the vicinity of 66), and on the side surfaces of each element region, except the portions under the gate electrode, the concentration of the first conductive type impurity is equal to or lower than that of the first conductive type impurity in the body of the element region. According to the present invention, in the semiconductor device having a trench isolation, the formation of a parasitic channel at element region top surface edges under a gate electrode can be prevented and a leak current in an OFF state can be reduced without any increase in a junction capacitance which retards the driving velocity of elements and without any increase in a junction leak current.
Abstract:
There is provided a method for manufacturing a semiconductor device for forming a silicide layer of metal of high melting point, wherein the metal of high melting point is processed in sputtering under a condition in which no deterioration is produced by the sputtering apparatus. There is also provided a sputtering apparatus for manufacturing semiconductor device. In the method of the present invention, a high melting point metal is accumulated on a silicon substrate formed with a gate electrode of a semiconductor element to form a metallic film of high melting point, thereafter it is heat treated to form a silicide layer of the high melting point metal at an interface layer with the metallic film with high melting point, and in this case, the metallic film of high melting point is accumulated in sputtering by a magnetron sputtering device under a condition in which an electrical load amount Q reaching to the gate electrode is less than 5 C/cm2. In addition, the sputtering apparatus 30 has the collimator plate 32 including an electrical conductive material having many through-pass holes passed from the target toward the wafer between the target holder 16 and the wafer holder 14 while it is being connected to an earth terminal.
Abstract translation:提供一种制造用于形成高熔点金属的硅化物层的半导体器件的方法,其中在溅射装置不产生劣化的条件下,溅射中处理高熔点金属。 还提供了一种用于制造半导体器件的溅射装置。 在本发明的方法中,在形成有半导体元件的栅电极的硅衬底上积聚高熔点金属,形成高熔点金属膜,然后进行热处理,形成硅化物层 在与熔点高的金属膜的界面层处的高熔点金属,在这种情况下,通过磁控溅射装置在溅射中积聚高熔点的金属膜,在电负载量Q达到 栅电极小于5℃/ cm 2。 此外,溅射装置30具有准直器板32,该准直板32具有导电材料,该导电材料具有许多穿过孔,当目标保持器16和晶片保持器14被连接到接地端子时,其具有从目标物朝向晶片传递的晶片。
Abstract:
In a method of fabricating a semiconductor device by the use of a semiconductor substrate (1), boron ions (4) are implanted into the semiconductor substrate from a trench (3) which is formed to the semiconductor substrate. The trench is defined by a plurality of side surfaces and a bottom surface extending between the side surfaces. The boron ions are implanted through all of the side surfaces and the bottom surface. It is preferable that isolating material is filled into the trench to produce a trench isolation extending over a p-well (7) and a n-well (8).