Control device of variable damping force damper
    1.
    发明授权
    Control device of variable damping force damper 有权
    可变阻尼力阻尼器的控制装置

    公开(公告)号:US07340334B2

    公开(公告)日:2008-03-04

    申请号:US11797420

    申请日:2007-05-03

    CPC classification number: B60G17/08 B60G2400/102 B60G2400/252 B60G2500/10

    Abstract: A control device of a variable damping force damper for controlling a damping force of a damper used in a vehicle suspension system comprises: relative displacement detection means for detecting a value corresponding to a relative displacement between a vehicle body and a wheel in a vertical direction; relative speed detection means for detecting a value corresponding to a relative speed between the vehicle body and the wheel in the vertical direction; multiplying means for multiplying the value corresponding to the relative displacement and the value corresponding to the relative speed; and means for setting a damping force control target value of the damper based on the output from the multiplying means.

    Abstract translation: 用于控制在车辆悬架系统中使用的阻尼器的阻尼力的可变阻尼力阻尼器的控制装置包括:相对位移检测装置,用于检测对应于车身和车轮在垂直方向上的相对位移的值; 相对速度检测装置,用于检测对应于车体和车轮在垂直方向上的相对速度的值; 用于将对应于相对位移的值与对应于相对速度的值相乘的乘法装置; 以及用于基于乘法装置的输出设定阻尼器的阻尼力控制目标值的装置。

    PHOTOVOLTAIC MODULE
    2.
    发明申请
    PHOTOVOLTAIC MODULE 审中-公开
    光伏模块

    公开(公告)号:US20110192449A1

    公开(公告)日:2011-08-11

    申请号:US13090719

    申请日:2011-04-20

    Abstract: This invention provides a photovoltaic module for preventing insulation failure between an outer frame and connection leads. The photovoltaic module comprises: a photovoltaic submodule including a plurality of solar cells interposed between two light-transmitting substrates through the intermediary of an encapsulant and the connection leads extending from an edge between light-transmitting substrates and outputting generated electric currents; a terminal box attached near an edge of the photovoltaic submodule and housing connected parts between the connection leads and cables for outputting the electric currents to the outside; and an outer frame fitting over peripheral edges of the photovoltaic submodule. A side, of the light-receiving side light-transmitting substrate, from which the connection leads are pulled out, is made large so as to extend outward further than the other light-transmitting substrate. The connection leads are led out from the edge between the two light-transmitting substrates to be guided into the terminal box.

    Abstract translation: 本发明提供一种用于防止外框与连接引线之间的绝缘故障的光伏组件。 光伏模块包括:光电子模块,其包括通过密封剂介于两个透光衬底之间的多个太阳能电池,以及从透光衬底之间的边缘延伸并输出产生的电流的连接引线; 附接在光伏子模块的边缘附近的接线盒,并且在连接引线和电缆之间容纳连接部分,用于将电流输出到外部; 以及外框架,其装配在光伏子模块的外围边缘上。 连接引线被拉出的光接收侧透光基板的一侧被制成较大,以比另一个透光基板更向外延伸。 连接引线从两个透光基板之间的边缘引出,以被引导到接线盒中。

    CONTROL DEVICE OF VARIABLE DAMPING FORCE DAMPER
    3.
    发明申请
    CONTROL DEVICE OF VARIABLE DAMPING FORCE DAMPER 有权
    可变阻尼力阻尼器的控制装置

    公开(公告)号:US20080009992A1

    公开(公告)日:2008-01-10

    申请号:US11797420

    申请日:2007-05-03

    CPC classification number: B60G17/08 B60G2400/102 B60G2400/252 B60G2500/10

    Abstract: A control device of a variable damping force damper for controlling a damping force of a damper used in a vehicle suspension system comprises: relative displacement detection means for detecting a value corresponding to a relative displacement between a vehicle body and a wheel in a vertical direction; relative speed detection means for detecting a value corresponding to a relative speed between the vehicle body and the wheel in the vertical direction; multiplying means for multiplying the value corresponding to the relative displacement and the value corresponding to the relative speed; and means for setting a damping force control target value of the damper based on the output from the multiplying means.

    Abstract translation: 用于控制在车辆悬架系统中使用的阻尼器的阻尼力的可变阻尼力阻尼器的控制装置包括:相对位移检测装置,用于检测对应于车身和车轮在垂直方向上的相对位移的值; 相对速度检测装置,用于检测对应于车体和车轮在垂直方向上的相对速度的值; 用于将对应于相对位移的值与对应于相对速度的值相乘的乘法装置; 以及用于基于乘法装置的输出设定阻尼器的阻尼力控制目标值的装置。

    Display device and optical filter
    4.
    发明授权
    Display device and optical filter 失效
    显示设备和滤光片

    公开(公告)号:US08026653B2

    公开(公告)日:2011-09-27

    申请号:US12305566

    申请日:2007-06-20

    CPC classification number: H01J11/44 H01J11/12 H01J2211/444 H01J2329/892

    Abstract: A display device provided with a screen, comprising: an optical filter having a blind sheet that comprises a plurality of semitranslucent layers having translucence arranged side-by-side extending in a horizontal direction and having a predetermined thickness in a vertical direction, and a plurality of transparent layers which are disposed between the semitranslucent layers and which are of a higher translucency than that of the semitranslucent layers and of a greater thickness than the thickness of the semitranslucent layers; and an adhesive member for sticking the optical filter to the screen, wherein the ratio of the transmittance of a limit angle of the screen with respect to the transmittance of the optical filter at the center of the screen is at least 0.10 and not more than 0.50.

    Abstract translation: 一种具有屏幕的显示装置,其特征在于,具备:具有遮蔽板的滤光器,所述遮蔽板包括多个半透明层,所述半透明层在水平方向上并排布置,并且在垂直方向上具有预定厚度, 的透明层,其设置在半透明层之间并且具有比半透明层更高的半透明度并且具有比半透明层的厚度更大的厚度; 以及用于将滤光片粘贴到屏幕上的粘合构件,其中屏幕的极限角度相对于屏幕中心处的滤光器的透射率的透射率的比率为至少0.10且不大于0.50 。

    Photovoltaic module comprising a terminal box attached to the rear surface
    5.
    发明授权
    Photovoltaic module comprising a terminal box attached to the rear surface 有权
    光伏组件包括附接到后表面的接线盒

    公开(公告)号:US07952016B2

    公开(公告)日:2011-05-31

    申请号:US11519233

    申请日:2006-09-12

    Abstract: This invention provides a photovoltaic module for preventing insulation failure between an outer frame and connection leads. The photovoltaic module comprises: a photovoltaic submodule including a plurality of solar cells interposed between two light-transmitting substrates through the intermediary of an encapsulant and the connection leads extending from an edge between light-transmitting substrates and outputting generated electric currents; a terminal box attached near an edge of the photovoltaic submodule and housing connected parts between the connection leads and cables for outputting the electric currents to the outside; and an outer frame fitting over peripheral edges of the photovoltaic submodule. A side, of the light-receiving side light-transmitting substrate, from which the connection leads are pulled out, is made large so as to extend outward further than the other light-transmitting substrate. The connection leads are led out from the edge between the two light-transmitting substrates to be guided into the terminal box.

    Abstract translation: 本发明提供一种用于防止外框与连接引线之间的绝缘故障的光伏组件。 光伏模块包括:光电子模块,其包括通过密封剂介于两个透光衬底之间的多个太阳能电池,以及从透光衬底之间的边缘延伸并输出产生的电流的连接引线; 附接在光伏子模块的边缘附近的接线盒,并且在连接引线和电缆之间容纳连接部分,用于将电流输出到外部; 以及外框架,其装配在光伏子模块的外围边缘上。 连接引线被拉出的光接收侧透光基板的一侧被制成较大,以比另一个透光基板更向外延伸。 连接引线从两个透光基板之间的边缘引出,以被引导到接线盒中。

    Yaw moment control system of vehicle
    6.
    发明授权
    Yaw moment control system of vehicle 有权
    车辆偏心力矩控制系统

    公开(公告)号:US08095272B2

    公开(公告)日:2012-01-10

    申请号:US11901709

    申请日:2007-09-18

    Abstract: A rotatable grip (ancillary operation member) is provided on a part of a steering wheel body of a steering wheel (main operation member) for turning wheels. When the grip is rotated, a difference is generated between left and right wheels, and a yaw moment generated with this difference can assist or suppress the turning of a vehicle. Because the grip constitutes a part of the steering wheel body, it is possible to rotate the grip to assist or suppress the turning of the vehicle, while operating the steering wheel to turn the vehicle. Because both the steering wheel body and the grip can be operated by the same hand of a driver, operational burden on the driver is alleviated. Thus, it is possible to concurrently provide an excellent operability of the main operation member for controlling a kinetic state of the vehicle, and an excellent operability of the ancillary operation member for controlling the operation of a yaw moment generating device.

    Abstract translation: 在转向轮的方向盘(主操作构件)的方向盘主体的一部分上设置有可旋转的手柄(辅助操作构件)。 当把手旋转时,在左右轮之间产生差异,并且由此产生的横摆力矩可以帮助或抑制车辆的转弯。 由于把手构成方向盘主体的一部分,所以能够旋转手柄以辅助或抑制车辆的转动,同时操作方向盘以转动车辆。 因为方向盘主体和把手可以通过驾驶员的同一只手操作,所以可以减轻驾驶员的操作负担。 因此,可以同时提供用于控制车辆的动态的主操作构件的优异的可操作性,以及用于控制横摆力矩发生装置的操作的辅助操作构件的优异的可操作性。

    Semiconductor wafer and semiconductor device, and method for manufacturing same
    7.
    发明授权
    Semiconductor wafer and semiconductor device, and method for manufacturing same 有权
    半导体晶片和半导体器件及其制造方法

    公开(公告)号:US07615781B2

    公开(公告)日:2009-11-10

    申请号:US11633502

    申请日:2006-12-05

    Applicant: Minoru Higuchi

    Inventor: Minoru Higuchi

    Abstract: There is a room for improvement in conventional semiconductor devices in terms of reducing the chip area. A semiconductor device 1 comprises an evaluation transistor 10 (first characteristic evaluation device), an evaluation transistor (second characteristic evaluation device), measurement pads 30 (first measurement pads) and measurement pads 40 (second measurement pads). The measurement pad 30 and the measurement pad 40 are provided in different layers in the interconnect layer.

    Abstract translation: 在减少芯片面积方面,在常规半导体器件中有改进的余地。 半导体器件1包括评估晶体管10(第一特性评估器件),评估晶体管(第二特性评估器件),测量焊盘30(第一测量焊盘)和测量焊盘40(第二测量焊盘)。 测量垫30和测量垫40在互连层中设置在不同的层中。

    Method for manufacturing a semiconductor device
    8.
    发明授权
    Method for manufacturing a semiconductor device 失效
    半导体器件的制造方法

    公开(公告)号:US06376331B1

    公开(公告)日:2002-04-23

    申请号:US09669896

    申请日:2000-09-27

    Applicant: Minoru Higuchi

    Inventor: Minoru Higuchi

    CPC classification number: H01L21/76205 H01L21/76213

    Abstract: A semiconductor device is herein disclosed which comprises a plurality of element regions formed on a first conductive type semiconductor substrate, element isolation regions for isolating the element regions from each other, and gate electrodes on parts of the element regions, the element regions being in contact with the element isolation regions at side surfaces of the element regions, wherein in the element region under each gate electrode, the concentration of a first conductive type impurity is high in an element region top surface edge area (in the vicinity of 66), and on the side surfaces of each element region, except the portions under the gate electrode, the concentration of the first conductive type impurity is equal to or lower than that of the first conductive type impurity in the body of the element region. According to the present invention, in the semiconductor device having a trench isolation, the formation of a parasitic channel at element region top surface edges under a gate electrode can be prevented and a leak current in an OFF state can be reduced without any increase in a junction capacitance which retards the driving velocity of elements and without any increase in a junction leak current.

    Abstract translation: 本文公开了一种半导体器件,其包括形成在第一导电类型半导体衬底上的多个元件区域,用于将元件区域彼此隔离的元件隔离区域和元件区域的部分上的栅电极,元件区域接触 在元件区域的侧面的元件隔离区域中,在元件区域顶面边缘区域(66附近),在各栅电极下的元件区域中,第一导电型杂质的浓度高, 除了栅极电极以外的各部分的侧面,第一导电型杂质的浓度等于或低于元件区域的第一导电型杂质的浓度。 根据本发明,在具有沟槽隔离的半导体器件中,可以防止在栅电极下面的元件区顶部表面边缘处形成寄生沟道,并且可以减小在OFF状态下的漏电流,而不会增加 结电容,其延迟元件的驱动速度并且没有任何增加的结漏电流。

    Sputtering apparatus for sputtering high melting point metal and method for manufacturing semiconductor device having high melting point metal
    9.
    发明授权
    Sputtering apparatus for sputtering high melting point metal and method for manufacturing semiconductor device having high melting point metal 有权
    用于溅射高熔点金属的溅射装置和用于制造具有高熔点金属的半导体器件的方法

    公开(公告)号:US06309515B1

    公开(公告)日:2001-10-30

    申请号:US09181649

    申请日:1998-10-29

    CPC classification number: H01J37/3447 C23C14/35 H01L21/28518 H01L21/2855

    Abstract: There is provided a method for manufacturing a semiconductor device for forming a silicide layer of metal of high melting point, wherein the metal of high melting point is processed in sputtering under a condition in which no deterioration is produced by the sputtering apparatus. There is also provided a sputtering apparatus for manufacturing semiconductor device. In the method of the present invention, a high melting point metal is accumulated on a silicon substrate formed with a gate electrode of a semiconductor element to form a metallic film of high melting point, thereafter it is heat treated to form a silicide layer of the high melting point metal at an interface layer with the metallic film with high melting point, and in this case, the metallic film of high melting point is accumulated in sputtering by a magnetron sputtering device under a condition in which an electrical load amount Q reaching to the gate electrode is less than 5 C/cm2. In addition, the sputtering apparatus 30 has the collimator plate 32 including an electrical conductive material having many through-pass holes passed from the target toward the wafer between the target holder 16 and the wafer holder 14 while it is being connected to an earth terminal.

    Abstract translation: 提供一种制造用于形成高熔点金属的硅化物层的半导体器件的方法,其中在溅射装置不产生劣化的条件下,溅射中处理高熔点金属。 还提供了一种用于制造半导体器件的溅射装置。 在本发明的方法中,在形成有半导体元件的栅电极的硅衬底上积聚高熔点金属,形成高熔点金属膜,然后进行热处理,形成硅化物层 在与熔点高的金属膜的界面层处的高熔点金属,在这种情况下,通过磁控溅射装置在溅射中积聚高熔点的金属膜,在电负载量Q达到 栅电极小于5℃/ cm 2。 此外,溅射装置30具有准直器板32,该准直板32具有导电材料,该导电材料具有许多穿过孔,当目标保持器16和晶片保持器14被连接到接地端子时,其具有从目标物朝向晶片传递的晶片。

    Method of fabricating semiconductor device capable of providing MOSFET which is improved in a threshold voltage thereof
    10.
    发明授权
    Method of fabricating semiconductor device capable of providing MOSFET which is improved in a threshold voltage thereof 失效
    制造能够提供其阈值电压的MOSFET的半导体器件的方法

    公开(公告)号:US06281094B1

    公开(公告)日:2001-08-28

    申请号:US09082186

    申请日:1998-05-21

    CPC classification number: H01L21/823878 H01L21/26586 H01L21/76237

    Abstract: In a method of fabricating a semiconductor device by the use of a semiconductor substrate (1), boron ions (4) are implanted into the semiconductor substrate from a trench (3) which is formed to the semiconductor substrate. The trench is defined by a plurality of side surfaces and a bottom surface extending between the side surfaces. The boron ions are implanted through all of the side surfaces and the bottom surface. It is preferable that isolating material is filled into the trench to produce a trench isolation extending over a p-well (7) and a n-well (8).

    Abstract translation: 在通过使用半导体衬底(1)制造半导体器件的方法中,从形成于半导体衬底的沟槽(3)将硼离子(4)注入到半导体衬底中。 沟槽由多个侧表面和在侧表面之间延伸的底表面限定。 硼离子通过所有侧表面和底表面注入。 优选地,将隔离材料填充到沟槽中以产生在p阱(7)和n阱(8)上延伸的沟槽隔离。

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