公开(公告)号：US08912099B2

公开(公告)日：2014-12-16

申请号：US13953857

申请日：2013-07-30

申请人： Mitsubishi Electric Corporation

发明人： Kenichiro Kurahashi ,  Yoshitaka Kamo ,  Yoshitsugu Yamamoto

IPC分类号： H01L21/302 ,  H01L21/461 ,  H01L21/28 ,  H01L29/66 ,  H01L29/778

CPC分类号： H01L21/28017 ,  H01L21/0272 ,  H01L21/0331 ,  H01L21/28581 ,  H01L21/31111 ,  H01L29/2003 ,  H01L29/401 ,  H01L29/42316 ,  H01L29/66431 ,  H01L29/778

摘要： A method of manufacturing a semiconductor device includes forming a first layer on a semiconductor layer, forming a second layer on the first layer, forming a patterned mask on the second layer, etching and removing a portion of the second layer that is not covered by the patterned mask, wet etching the first layer to a width which is less than the width of the patterned mask, after the wet etching, forming an insulating layer on the semiconductor layer, removing the first layer and the second layer to form an opening in the insulating layer, and forming a gate electrode on a surface of the semiconductor layer exposed through the opening.

摘要翻译： 一种制造半导体器件的方法包括在半导体层上形成第一层，在第一层上形成第二层，在第二层上形成图案化掩模，蚀刻并除去第二层未覆盖的第二层的一部分 在图案化掩模之后，在湿蚀刻之后，在第一层上湿蚀刻到小于图案化掩模的宽度的宽度，在半导体层上形成绝缘层，去除第一层和第二层，以在第 绝缘层，并且在通过所述开口暴露的所述半导体层的表面上形成栅电极。

公开(公告)号：US20140175615A1

公开(公告)日：2014-06-26

申请号：US14036009

申请日：2013-09-25

申请人： Mitsubishi Electric Corporation

发明人： Yoichi Nogami ,  Yoshitsugu Yamamoto ,  Yoshinori Yokoyama ,  Shinnosuke Soda

IPC分类号： H01L23/29 ,  H01L21/56

CPC分类号： H01L23/291 ,  H01L21/56 ,  H01L23/3171 ,  H01L23/481 ,  H01L23/564 ,  H01L2224/18 ,  H01L2924/0002 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/00 ,  H01L2924/0001

摘要： A method for manufacturing a semiconductor device includes: forming a semiconductor element on a main surface of a substrate; forming a low melting glass film having a melting point of 450° C. or less on the main surface and the semiconductor element; heat treating the substrate while pressing the low melting glass film toward the main surface of the substrate with a pressurizing jig that is insulating or semi-insulating, and sintering the low melting glass film; and leaving the pressurizing jig on the low melting glass film after sintering the low melting glass film.

摘要翻译： 一种制造半导体器件的方法包括：在衬底的主表面上形成半导体元件; 在主表面和半导体元件上形成熔点为450℃以下的低熔点玻璃膜; 对基板进行热处理，同时用绝缘或半绝缘的加压夹具将低熔点玻璃膜压向基板的主表面，并烧结低熔点玻璃膜; 并在烧结低熔点玻璃膜之后将加压夹具留在低熔点玻璃膜上。