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11.发明申请Reflection type mask blank and reflection type mask and production methods for them 有权反射型面罩坯料和反光型面膜及其制作方法公开(公告)号：US20050208389A1
公开(公告)日：2005-09-22
申请号：US10510916
申请日：2003-04-11
IPC分类号： G03F1/52 , G03F1/00 , G03F1/50 , H01L21/027 , G03F9/00
摘要： A reflective mask blank has a substrate (11) on which a reflective layer (12) for reflecting exposure light in a short-wavelength region including an extreme ultraviolet region and an absorber layer (16) for absorbing the exposure light are successively formed. The absorber layer (16) has an at least two-layer structure including as a lower layer an exposure light absorbing layer (14) formed by an absorber for the exposure light in the short-wavelength region including the extreme ultraviolet region and as an upper layer a low-reflectivity layer (15) formed by an absorber for inspection light used in inspection of a mask pattern. The upper layer is made of a material containing tantalum (Ta), boron (B), and nitrogen (N). The content of B is 5 at % to 30 at %. The ratio of Ta and N (Ta:N) falls within a range of 8:1 to 2:7. Alternatively, the reflective mask blank has a substrate on which a multilayer reflective film and an absorber layer are successively formed. In this case, the absorber layer is made of a material containing tantalum (Ta), boron (B), and nitrogen (N). The content of B is 5 at % to 25 at %. The ratio of Ta and N (Ta:N) falls within a range of 8:1 to 2:7.
摘要翻译： 反射掩模板具有基板（11），在基板（11）上依次形成反射层（12），反射层（12）用于反射在包括极紫外区域的短波长区域中的曝光和用于吸收曝光光的吸收层（16）。 吸收层（16）具有至少两层结构，其包括作为下层的曝光用光吸收层（14），该曝光用光吸收层由包含极紫外区域的短波长区域中的曝光用光的吸收体形成， 层叠由用于检查掩模图案的检查光的吸收体形成的低反射率层（15）。 上层由含有钽（Ta），硼（B）和氮（N）的材料制成。 B的含量为5原子％至30原子％。 Ta和N（Ta：N）的比例落在8:1-2:7的范围内。 或者，反射掩模坯料具有依次形成有多层反射膜和吸收体层的基板。 在这种情况下，吸收层由含有钽（Ta），硼（B）和氮（N）的材料制成。 B的含量为5原子％至25原子％。 Ta和N（Ta：N）的比例落在8:1-2:7的范围内。
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公开(公告)号：US08130447B2
公开(公告)日：2012-03-06
申请号：US12882267
申请日：2010-09-15
IPC分类号： G02B5/30
CPC分类号： G02B5/3058
摘要： A polarization element has a polarizer with an aggregate of metal pieces: Plasmon resonance frequency of a metal piece varies according to the polarization direction of a irradiated on it. In the polarization element, the plasmon resonance frequency in a predetermined direction of a metal piece is substantially equal to the frequency of light irradiated on the polarization element. The real part and the imaginary part of permittivity at the plasmon resonance frequency of a metal piece's constituent material and the refractive index (na) of a dielectric layer satisfy a particular relation.
摘要翻译： 偏振元件具有金属片的聚集体的偏振片：金属片的等离子体共振频率根据照射在其上的偏振方向而变化。 在偏振元件中，金属片的预定方向上的等离子体共振频率基本上等于照射在偏振元件上的光的频率。 在金属片构成材料的等离子共振频率下的介电常数的实部和虚部以及介电层的折射率（na）满足特定的关系。
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公开(公告)号：US20100255411A1
公开(公告)日：2010-10-07
申请号：US12680355
申请日：2008-09-26
申请人： Takashi Sato , Mitsuhiro Kureishi
发明人： Takashi Sato , Mitsuhiro Kureishi
CPC分类号： G03F7/0002 , B81C99/009 , B82Y10/00 , B82Y40/00
摘要： Provided is a method of manufacturing an imprint mold formed with a highly accurate fine pattern by the use of a mask blank.In a mask blank having a thin film for forming a pattern on a transparent substrate, the thin film comprises an upper layer formed of a material containing Cr and nitrogen and a lower layer formed of a material containing a compound mainly composed of Ta and capable of being etched by dry etching using a chlorine-based gas. The upper layer and the lower layer of the thin film are etched by dry etching using a chlorine-based gas substantially free of oxygen and then the substrate is etched by dry etching using a fluorine-based gas, thereby obtaining an imprint mold.
摘要翻译： 提供了通过使用掩模坯料来制造形成有高精度精细图案的压印模具的方法。 在具有用于在透明基板上形成图案的薄膜的掩模坯料中，薄膜包括由含有Cr和氮的材料形成的上层和由含有主要由Ta组成的化合物的材料形成的下层，并且能够 通过使用氯基气体的干蚀刻蚀刻。 通过使用基本上不含氧的氯系气体的干蚀刻来蚀刻薄膜的上层和下层，然后通过使用氟基气体的干法蚀刻来蚀刻基板，从而获得压印模具。
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14.发明申请Reflective Mask Blank, Reflective Mask and Methods of Producing the Mask Blank and the Mask 有权反光面罩空白，反光面膜及生产面膜和面膜的方法公开(公告)号：US20080248409A1
公开(公告)日：2008-10-09
申请号：US12116550
申请日：2008-05-07
摘要： A reflective mask blank has a substrate (11) on which a reflective layer (12) for reflecting exposure light in a short-wavelength region including an extreme ultraviolet region and an absorber layer (16) for absorbing the exposure light are successively formed. The absorber layer (16) has an at least two-layer structure including as a lower layer an exposure light absorbing layer (14) formed by an absorber for the exposure light in the short-wavelength region including the extreme ultraviolet region and as an upper layer a low-reflectivity layer (15) formed by an absorber for inspection light used in inspection of a mask pattern. The upper layer is made of a material containing tantalum (Ta), boron (B), and nitrogen (N). The content of B is 5 at % to 30 at %. The ratio of Ta and N (Ta:N) falls within a range of 8:1 to 2:7. Alternatively, the reflective mask blank has a substrate on which a multilayer reflective film and an absorber layer are successively formed. In this case, the absorber layer is made of a material containing tantalum (Ta), boron (B), and nitrogen (N). The content of B is 5 at % to 25 at %. The ratio of Ta and N (Ta:N) falls within a range of 8:1 to 2:7.
摘要翻译： 反射掩模板具有基板（11），在基板（11）上依次形成反射层（12），反射层（12）用于反射在包括极紫外区域的短波长区域中的曝光和用于吸收曝光光的吸收层（16）。 吸收层（16）具有至少两层结构，其包括作为下层的曝光用光吸收层（14），该曝光用光吸收层由包含极紫外区域的短波长区域中的曝光用光的吸收体形成， 层叠由用于检查掩模图案的检查光的吸收体形成的低反射率层（15）。 上层由含有钽（Ta），硼（B）和氮（N）的材料制成。 B的含量为5原子％至30原子％。 Ta和N（Ta：N）的比例落在8:1-2:7的范围内。 或者，反射掩模坯料具有依次形成有多层反射膜和吸收体层的基板。 在这种情况下，吸收层由含有钽（Ta），硼（B）和氮（N）的材料制成。 B的含量为5原子％至25原子％。 Ta和N（Ta：N）的比例落在8:1-2:7的范围内。
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